ROHM RB706D-40 Technical data

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RB706D-40

Diodes

Schottky barrier diode

RB706D-40

zApplic ations
Low current rectification

zFeatures

1) Small mold type. (SMD3)

2) Low I

R

3) High reliability.

zConstruction
Silicon epitaxial planar

z External dimensions (Unit : mm)

2.9±0.2
各リードとも

＋0.1

Each lead has s am e dim e ns ion

0.4

　－0.05

同寸法

＋0.1

0.15

(3)

－0.06

＋0.2

－0.1

2.8±0.2

1.6

(2) (1)

0.95 0.95

1.9±0.2

0.8±0.1

1.1±0.2

0.01

ROH M : SMD3
JEDEC :S0T-346
JEITA : SC-59

week code

0～0.1

z T aping specifications(Unit : mm)

4.0±0.1

2.0±0.05

φ1.5±0.1
　　　　　 0

3.2±0.1

4.0±0.1

zAbsolute maximum ratings (Ta=25°C)

everse voltage (repetitive peak) 45

R

everse voltage (DC)

R
Ave

rage rectified forward current (*1)

F

orward current surge peak （60Hz・1cyc） (*1) 200

tion temperature

Junc

orage temperature

St

*1) Rating of per diode : Io/2

(

Parameter

Symbol Unit

V

RM

V

R

Io mA

I

FSM

Tj

Tstg

Limits

40
30

125

-40 to +125

zElectrical characteristics (Ta=25°C)

Forward voltage
Reverse current
Capacitance between terminals Ct1 - 2.0 - pF

Parameter

Symbol Min. Typ. Max. Unit Conditions

V

1

F

I

1

R

- - 0.37 V

--1µA

z Land size figure (Unit : mm)

1.0MIN.

0.8MIN.

0.3～0.6

z Structure

1.75±0.1

5±0.05

3.

3.2±0.1

5.5±0.2

φ1.05MIN

V
V

mA

℃
℃

0～0.5

=1mA

I

F

=10V

V

R

V

=1V , f=1MHz

R

0.95

1.9

2.4

0.3±0.1

0.2

8.0±

3.2±0.1

1.35±0.1

1/3

Rev.B

Diodes

RB706D-40

zElectrical characteristic curves (Ta=25°C)

100

Ta=125℃

10

Ta=75℃

1

0.1

FORWARD CU RRENT:IF(mA)

0.01

0 100 200 300 400 500 600 700 800 900 1000

FORWARD VOLTAG E：VF(mV)

VF-IF CHARACTERISTICS

Ta=25℃

Ta=-25℃

1000

100

10

1

0.1

REVERSE CURRENT:IR(uA)

0.01

0.001
0102030

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

10

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0 102030

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

f=1MHz

300

mV)

290

:VF(

280

TAGE

270

D VOL
AR

260

ORW
F

250

AVE:267.4mV

VF DIPERSION MAP

Ta=25℃

IF=1mA

n=30pcs

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

REVERSE CURRENT:IR(nA)

0.1

0

AVE:0.083nA

IR DISPERSION MAP

Ta=25℃
VR=10V
n=30pcs

10

9

8

7

6

5

4

3

TERMINALS:Ct(pF)

2

CAPACITANCE BETWEEN

1

0

AVE:2.52pF

Ct DISPERSION MAP

Ta=25℃

f=1MHz

VR=0V

n=10pcs

20

15

Ifsm

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

AVE:7.30A

1cyc

8.3ms

IFSM DISPERSION MAP

20

Ifsm

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

110100

NUMBER OF CYCL ES

IFSM-CYCLE CHARACTERISTICS

8.3ms

8.3ms

1cyc

PEAK SURGE

10

9

8

7

6

5

4

3

2

FORWARD CURRENT:IFSM(A)

1

0

110100

IFSM-t CHARACTERISTICS

TIME:t(ms)

Ifsm

t

1000

100

IENT

TRANS

10

Mounted on epoxy board

IM=1mA IF=10mA

THAERMAL IMPEDANCE:Rth (℃/W)

1

0.001 0.1 10 1000
TIME:t(s)

Rth-t CHARACTERISTICS

1ms

Rth(j-a)

Rth(j-c)

time

300us

0.04

0.03

0.02

FORWARD POWER

DISSIPATION:Pf(W)

0.01

0.00

0.00 0.01 0.02 0.03 0.04 0.05

D=1/2

Sin(θ＝180)

AVERAGE RECTIFIED

FORWARD CURRENT Io(A)

Io-Pf CHARACTERISTICS

DC

0.003

(W)

0.002

R

D=1/2

0.001

REVERSE POWER

DISSIPATION:P

0

0102030

DC

Sin(θ＝180)

REVERSE VOLTAGE:VR(V)

VR-P

CHARACTERISTICS

R

2/3

Rev.B