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RB706D-40
Diodes
Schottky barrier diode
RB706D-40
zApplic ations
Low current rectification
zFeatures
1) Small mold type. (SMD3)
2) Low I
R
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
2.9±0.2
各リードとも
＋0.1
Each lead has s am e dim e ns ion
0.4
－0.05
同寸法
＋0.1
0.15
(3)
－0.06
＋0.2
－0.1
2.8±0.2
1.6
(2) (1)
0.95 0.95
1.9±0.2
0.8±0.1
1.1±0.2
0.01
ROH M : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
0～0.1
z T aping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
0
3.2±0.1
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
everse voltage (repetitive peak) 45
R
everse voltage (DC)
R
Ave
rage rectified forward current (*1)
F
orward current surge peak （60Hz・1cyc） (*1) 200
tion temperature
Junc
orage temperature
St
*1) Rating of per diode : Io/2
(
Parameter
Symbol Unit
V
RM
V
R
Io mA
I
FSM
Tj
Tstg
Limits
40
30
125
-40 to +125
zElectrical characteristics (Ta=25°C)
Forward voltage
Reverse current
Capacitance between terminals Ct1 - 2.0 - pF
Parameter
Symbol Min. Typ. Max. Unit Conditions
V
1
F
I
1
R
- - 0.37 V
--1µA
z Land size figure (Unit : mm)
1.0MIN.
0.8MIN.
0.3～0.6
z Structure
1.75±0.1
5±0.05
3.
3.2±0.1
5.5±0.2
φ1.05MIN
V
V
mA
℃
℃
0～0.5
=1mA
I
F
=10V
V
R
V
=1V , f=1MHz
R
0.95
1.9
2.4
0.3±0.1
0.2
8.0±
3.2±0.1
1.35±0.1
1/3
Rev.B
Diodes
RB706D-40
zElectrical characteristic curves (Ta=25°C)
100
Ta=125℃
10
Ta=75℃
1
0.1
FORWARD CU RRENT:IF(mA)
0.01
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAG E：VF(mV)
VF-IF CHARACTERISTICS
Ta=25℃
Ta=-25℃
1000
100
10
1
0.1
REVERSE CURRENT:IR(uA)
0.01
0.001
0102030
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
1
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
0.1
0 102030
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
300
mV)
290
:VF(
280
TAGE
270
D VOL
AR
260
ORW
F
250
AVE:267.4mV
VF DIPERSION MAP
Ta=25℃
IF=1mA
n=30pcs
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
REVERSE CURRENT:IR(nA)
0.1
0
AVE:0.083nA
IR DISPERSION MAP
Ta=25℃
VR=10V
n=30pcs
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
CAPACITANCE BETWEEN
1
0
AVE:2.52pF
Ct DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
20
15
Ifsm
10
PEAK SURGE
5
FORWARD CURRENT:IFSM(A)
0
AVE:7.30A
1cyc
8.3ms
IFSM DISPERSION MAP
20
Ifsm
15
10
PEAK SURGE
5
FORWARD CURRENT:IFSM(A)
0
110100
NUMBER OF CYCL ES
IFSM-CYCLE CHARACTERISTICS
8.3ms
8.3ms
1cyc
PEAK SURGE
10
9
8
7
6
5
4
3
2
FORWARD CURRENT:IFSM(A)
1
0
110100
IFSM-t CHARACTERISTICS
TIME:t(ms)
Ifsm
t
1000
100
IENT
TRANS
10
Mounted on epoxy board
IM=1mA IF=10mA
THAERMAL IMPEDANCE:Rth (℃/W)
1
0.001 0.1 10 1000
TIME:t(s)
Rth-t CHARACTERISTICS
1ms
Rth(j-a)
Rth(j-c)
time
300us
0.04
0.03
0.02
FORWARD POWER
DISSIPATION:Pf(W)
0.01
0.00
0.00 0.01 0.02 0.03 0.04 0.05
D=1/2
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
DC
0.003
(W)
0.002
R
D=1/2
0.001
REVERSE POWER
DISSIPATION:P
0
0102030
DC
Sin(θ＝180)
REVERSE VOLTAGE:VR(V)
VR-P
CHARACTERISTICS
R
2/3
Rev.B
Diodes
0.1
0.08
0.06
0.04
AVERAGE RECTIFIED
0.02
FORWARD CURRENT:Io(A)
Per chip
DC
D=1/2
Sin(θ＝180)
0
0 25 50 75 100 125
AMBIENT TEMPERATURE:Ta(℃)
0A
0V
t
Derating Curveﾞ(Io-Ta)
D=t/T
VR=20V
T Tj=125℃
RB706D-40
0.1
Io
VR
Per chip
0.08
0.06
DC
D=1/2
0.04
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.02
Sin(θ＝180)
0
0 25 50 75 100 125
0A
0V
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
t
T Tj=125℃
D=t/T
VR=20V
Io
VR
3/3
Rev.B
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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