ROHM RB705D Technical data
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Diodes
Schottky barrier diode
RB705D
Applications
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General purpose detection
High speed switching
External dimensions
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2.9±0.2
1.9±0.2
0.95 0.95
(Units : mm)
RB705D
+0.2
1.1
−0.1
0.8±0.1
Features
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1) Small surface mounting type. (SMD3)
2) Low reverse current and low forward voltage.
3) Multiple diodes with common cathode configuration.
Construction
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Silicon epitaxial planar
Circuit
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Absolute maximum ratings
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Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
∗60 Hz for 1
(T a = 2 5°C)
Symbol
V
∗
I
Tstg
V
I
FSM
Tj
Limits Unit
RM
R
O
40
40
30
200
125
~
−40
+125
D 3 H
+0.1
0.4
−0.05
(All leads have the same dimensions)
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
V
V
mA
mA
°C
°C
+0.1
−0.06
0~0.1
0.3~0.6
+0.2
−0.1
2.8±0.2
1.6
0.15
Electrical characteristics
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(T a = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
Reverse current
Capacitance between terminals
Note) ESD sensitive product handling required.
F
R
I
C
T
−−0.37 V IF=1mA
−−1 µAVR=10V
− 2.0 − pF VR=1V, f=1MHz
Diodes
Electrical characteristic curves
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1
100m
(A)
F
10m
°C
125
Ta=75°C
=
Ta
1m
100µ
FORWARD CURRENT : I
10µ
Ta=25°C
Ta=−25°C
Typ.
pulse measurement
(T a = 25°C)
100µ
10µ
A)
(
R
1µ
100n
10n
REVERSE CURRENT : I
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
RB705D
100
pF)
T (
10
1
1µ
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE : V
Fig. 1 Forward characteristics
10
(ns)
5
rr
2
1
0.5
0.2
REVERSE RECOVERY TIME : t
0.1
0
4 8 12 16 20 24 28
FORWARD CURRENT : I
Fig. 4 Reverse recovery time
characteristics
F
(mA)
1n
0 5 101520253035
F
(V)
REVERSE VOLTAGE : V
R
(
V)
Fig. 2 Reverse characteristics
0.1
CAPACITANCE BETWEEN TERMINALS : C
0 5 10 15 20 25
REVERSE VOLTAGE : V
R
(V)
Fig. 3 Capacitance between
terminals characteristics
100
80
60
40
Io CURRENT (%)
20
0
0
25 50 75 100 125
AMBIENT TEMPERATURE : Ta (°C)
Fig. 5 Derating curve
(mounting on glass epoxy PCBs)
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