Diodes
Schottky barrier diode
RB551V-30
External dimensions
Applications
!!!!
High-frequency rectification
Switching regulators
Features
!!!!
1) Small surface mounting type.
(UMD2)
2) Ultra low V
F
(V
F
.
=0.41V Typ. at 0.5A)
3) High reliability.
!!!!
2.5±0.2
1.7±0.1
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
D
1.25±0.1
±0.05
0.3
(Units : mm)
CATHODE MARK
+0.2
0.7
−0.1
RB551V-30
CATHODE MARK
D
2.5±0.2
1.7±0.1
+0.1
0.1
−0.05
∗There are two different markings.
1.25±0.1
±0.05
0.3
+0.1
0.1
−0.05
+0.2
0.7
−0.1
Construction
!!!!
Silicon epitaxial planar
Absolute maximum ratings
!!!!
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current∗
Junction temperature
Storage temperature
∗ 60Hz for 1
Electrical characteristics
!!!!
Parameter
Forward voltage
Reverse current −−100 µAV
(Ta = 25°C)
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
(Ta = 25°C)
Symbol
F1
V
V
F2
I
R
Limits Unit
30
20
V
V
0.5 A
2A
125 °C
−40~+125
°C
Min. Typ. Max. Unit Conditions
− 0.36 V IF = 100mA
− 0.47 V IF= 500mA
−
−
R
= 20V
Diodes
Electrical characteristic curves
!!!!
10A
1A
100m
125˚C
(A)
F
I
10m
100µ
Io (A)
1m
1.0
0.5
75
˚C
25
˚C
−25
˚C
0.0
0.1 0.2 0.3 0.4 0.5
VF (V)
Fig.1 Forward characteristics
(Ta = 25°C)
100m
10m
1m
100µ
(A)
R
I
10µ
1µ
100n
0
125
˚C
75
˚C
25
˚C
−25
˚C
VR (V)
Fig.2 Reverse characteristics
RB551V-30
1000.0
100.0
Ct (pF)
10.0
1.0
0.0
4010 20 30
10.0
VR (V)
Fig.3 Capacitance between
terminals characteristics
20.0
30.0
40.0
0
50 75 100 150
25 125
Ta (°C)
Fig.4 Derating curve