ROHM RB501V-40 Datasheet
Diodes
Schottky barrier diode
RB501V-40
External dimensions
Applications
!!!!
Low current rectification
Features
!!!!
1) Small surface mounting type. (UMD2)
2) Low V
F
. (VF=0.43V Typ. at 100mA)
3) High reliability.
Construction
!!!!
Silicon epitaxial planar
!!!!
0.2
0.1
±
±
2.5
1.7
1.25±0.1
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
4
0.3
CATHODE MARK
±
0.05
0.7
(Units : mm)
+
0.1
0.1
−
0.05
+
0.2
−
0.1
RB501V-40
CATHODE MARK
0.2
0.1
±
±
4
2.5
1.7
0.3
±
0.05
1.25±0.1
∗There are two different markings.
+
0.2
0.7
−
0.1
+
0.1
0.1
−
0.05
Absolute maximum ratings
!!!!
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature 125
Storage temperature
∗ 60 Hz for 1
Electrical characteristics
!!!!
(Ta = 25°C)
Symbol
V
RM
V
R
I
O
∗
I
FSM
Tj
Tstg
(Ta = 25°C)
Limits Unit
45
40
V
V
0.1 A
1A
°C
−40
~
+125
°C
Parameter Symbol Min. Typ. Max. Unit Conditions
V
Forward voltage
Forward voltage V
Reverse current
Capacitance between terminals − 6.0 − pF V
Note) ESD sensitive product handling required.
F1
F2
I
R
C
T
−
−
−
− 0.55 V IF=100mA
− 0.34 V IF=10mA
− 30 µAVR=10V
R
=10V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1000
mA)
(
F
100
10
125°C
75°C
25°C
FORWARD CURRENT : I
1
0
0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : V
Fig. 1 Forward characteristics
100
80
−25°C
F
(V
)
(Ta = 25°C)
100µ
REVERSE CURRENT : R (A)
10m
1m
10µ
1µ
0.1
0
REVERSE VOLTAGE : V
Fig. 2 Reverse characteristics
125°C
75°C
25°C
RB501V-40
100
pF)
(
10
CAPACITANCE BETWEEN TERMINALS : CT
4010 20 30
R
(
V)
1
0
5 101520253035
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristics
R
(
V)
60
40
Io CURRENT (%)
20
0
25 50 75 100 125
0
AMBIENT TEMPERATURE : Ta (°C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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