ROHM RB500V-40 Datasheet
Diodes
Schottky barrier diode
RB500V-40
External dimensions
Applications
!!!!
Low current rectification
Features
!!!!
1) Small surface mounting type. (UMD2)
R
2) Low I
. (IR=70nA Typ.)
3) High reliability.
Construction
!!!!
Silicon epitaxial planar
!!!!
0.2
0.1
±
±
2.5
1.7
1.25±0.1
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
2
0.3
CATHODE MARK
±
0.05
0.7
(Units : mm)
+0.1
0.1
−0.05
+0.2
−0.1
RB500V-40
CATHODE MARK
0.2
0.1
±
±
2
2.5
1.7
±
0.05
0.3
1.25±0.1
∗There are two different markings.
+0.2
0.7
−0.1
+0.1
0.1
−0.05
Absolute maximum ratings
!!!!
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
∗ 60Hz for 1
Electrical characteristics
!!!!
Parameter
Forward voltage
Reverse current
Capacitance between terminals − 6.0 − pF V
Note) ESD sensitive product handling required.
(Ta = 25°C)
Symbol
V
RM
V
R
I
O
∗
I
FSM
Tj
Tstg
(Ta = 25°C)
Symbol
V
I
C
Limits Unit
45
40
V
V
0.1 A
1A
125
−40~+125
°C
°C
Min. Typ. Max. Unit Conditions
F
R
T
− 0.45 V IF=10mA
− 1 µAVR=10V
−
−
R
=10V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1000
mA)
100
F (
(Ta = 25°C)
10000
1000
100
125°C
RB500V-40
100
pF)
(
T
10
125°C
75°C
1
FORWARD CURRENT : I
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
25°C
−25°C
FORWARD VOLTAGE : V
Fig. 1 Forward characteristics
100
80
60
40
Io CURRENT (%)
20
0
25 50 75 100 125
0
AMBIENT TEMPERATURE : Ta (°C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
10
1
REVERSE CURRENT : R (µA)
0.1
0.01
F
(
V)
0
REVERSE VOLTAGE : V
Fig. 2 Reverse characteristics
75°C
25°C
10
CAPACITANCE BETWEEN TERMINALS : C
4010 20 30
R
(V)
1
0
5 101520253035
REVERSE VOLTAGE : V
R
(V)
Fig. 3 Capacitance between
terminals characteristics
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