ROHM RB495D Datasheet
Diodes
Schottky barrier diode
RB495D
Applications
!!!!
Low current rectification
Features
!!!!
1) Small surface mounting type. (SMD3)
2) Two diodes with common cathode for excellent
installation efficiency.
3) High reliability.
External dimensions
!!!!
2.9±0.2
1.9±0.2
0.95 0.95
0.4
(All leads have same dimensions)
(Units : mm)
D 3 Q
+0.2
1.6
+0.1
−0.05
RB495D
+0.2
1.1
−0.1
0.8±0.1
+0.1
−0.06
0~0.1
0.3~0.6
−0.1
2.8±0.2
0.15
Construction
!!!!
Silicon epitaxial planar
Circuit
!!!!
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltege V
Mean rectifying current
Peak forward surge current
Junction temperature 125
Storage temperature
Operating temperture
∗1 Mean output current per element : IO / 2
∗2
60Hz for 1
∗1
(Ta = 25°C)
∗2
RM
O
I
I
FSM
Tj
Tstg
Topr
40
R
25
0.4
2
−40~+125
−30~+85
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
V
V
A
A
°C
°C
°C
Electrical characteristics
!!!!
(Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
V
Forward voltage
Reverse current
Note) ESD sensiteve product handling required.
F1
V
F2
I
R
− 0.30 V I
− 0.50 V I
−
−
−
− 70 µAV
F
=10mA
F
=200mA
R
=25V
Diodes
Electrical characteristic curves
!!!!
1
100m
°C
10m
CURRENT : IF (A)
FORWARD
100µ
75°C
Ta=125
25°C
1m
0
−40°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
(Ta = 25°C)
100m
(A)
R
CURRENT : I
100µ
REVERSE
10m
1m
10µ
1µ
0
Ta=125°C
75°C
25°C
0°C
10 20 30 40
VOLTAGE : VR (V)
REVERSE
Fig.2 Reverse characteristics
100
(pF)
T
10
CAPACITANCE BETWEEN TERMINALS : C
1
0 102030
5 152535
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
RB495D
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