ROHM RB481K Datasheet

Diodes

Schottky Barrier Diode

RB481K

RB481K

Applications

!

Low current rectification

Features

!

1) Compact size.

2) High reliability.

3) Extremely low forward voltage.

4) This is a composite component and is ideal for
reducing the number of components used.

Construction

!

Silicon epitaxial planar

Absolute maximum ratings

!

Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature

∗ 60 Hz for 1

(Ta=25°C)

Symbol

∗

RM

V

V

R

O

I

I

FSM

Tj

Tstg

External dimensions

!

1.25±0.1

0.6 0.65

0.3±0.1 0.2±0.1

(1)

(4)

(Units: mm)

3 U

(2)

(3)

0.2±0.10.2±0.1

0.650.65

1.25±0.1

2.0±0.2

(1)

(2)

ROHM : UMD4
EIAJ : SC - 82

Limits Unit

30 V
30 V

0.2 A
1A

125 °C

°C−40~+125

2.1±0.1

1.25±0.1

(4)

(3)

0.9±0.1

0.15±0.05

0.7

0~0.1

0.1Min.

Electrical characteristics

!

Parameter Symbol Min. Typ. Max. Unit Conditions

Forward voltage

Reverse current

(Ta=25°C unless otherwise noted)

V

F1

V

F2

V

F3

V

F4

I

R

− 0.18 0.28 V

− 0.25 0.33

−

0.34

−

0.40

−

3.6

0.43

0.50
30

µA

I

F

=1mA

I

F

V

=10mA

V

=100mA

I

F

F

I

V

=200mA

V

R=10V

Diodes

Electrical characteristic curves

!

1

100m

(A)

F

10m

100µ

FORWARD CURRENT : I

C

˚

5

C

˚

2

5

1

C

˚

7

=

5

a

T

1m

10µ

1µ

0 0.1 0.2 0.3 0.4 0.5 0.6

C

2

˚

5

2

−

FORWARD VOLTA GE : VF (V)

(Ta=25°C)

10m

1m

(A)

R

100µ

10µ

1µ

REVERSE CURRENT : I

100n

10n

0102030

Ta=125˚C

75˚C

25˚C

−25˚C

REVERSE VOLTAGE : VR (V)

RB481K

100

(pF)

T

10

CAPACITANCE BETWEEN TERMINALS : C

1

0 5 10 15 20 30 3525

REVERSE VOLTAGE : V

R

(V)

Fig. 1 Forward temperature
characteristic

Fig. 2 Reverse temperature
characteristic

Fig. 3 Capacitance between

terminals characteristic