ROHM RB480K Datasheet
Diodes
Shottky barrier diode
RB480K
RB480K
Applications
!
Low current rectification
Features
!
1) Small surface mounting (UMD4)
R
2) Low I
(I
.
R
=0.3µA Typ.)
3) This is a composite component
and is ideal for reducing the
number of components used.
4) High reliability.
Construction
!!!!
Silicon epitaxial planar
Circuit
!!!!
External dimensions
!!!!
2.0±0.2
1.25±0.1
0.6 0.65
0.3±0.1
0.2±0.1
3 T
0.2±0.1 0.2±0.1
0.65 0.65
1.3±0.1
ROHM: UMD4
EIAJ: SC-82
JEDEC: SOT-343
(Units : mm)
2.1±0.1
1.25±0.1
0.9±0.1
0.15±0.05
2.0±0.2
0.7
0∼0.1
1pin MARK
0.1Min.
1.3±0.1
0.65 0.65
0.25±0.1
0.25±0.1
3 T
0.25±0.1
0.25±0.1
0.65 0.65
1.3±0.1
∗There are two different markings.
1.25±0.1
2.1±0.1
0.15±0.05
0.9±0.1
0.7
0∼0.1
0.1Min.
Absolute maximum ratings
!!!!
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
∗
60Hz for 1
(Ta=25°C)
Symbol
∗
V
RM
V
I
O
I
FSM
Tj
Tstg
Limits
45
R
40
0.1
1
125
−40∼+125
Unit
V
V
A
A
˚C
˚C
Diodes
Electrical characteristics
!!!!
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Electrical characteristic curves
!!!!
1
A)
100m
(
F
10m
1m
100µ
FORWARD CURRENT : I
10µ
0 0.20.1 0.3 0.4 0.70.5 0.6
C
˚
C
5
˚
2
5
1
7
=
a
2
T
FORWARD VOLTAGE : V
Fig.1 Foward temperature
chraracteristics
C
˚
5
C
˚
5
2
−
(Ta=25°C)
F
(V)
Symbol
F1
V
V
F2
I
R1
I
R2
C
t1
C
t2
(Ta=25°C)
RB480K
Min.
Typ.
−
−
−
−
−
6.0
−
1m
100µ
A)
(
R
10µ
1µ
100n
REVERSE CURRENT : I
10n
01051520 3525 30
Max.
− 0.45
− 0.60
− 1
− 5
−
−
25
Ta=125˚C
75˚C
25˚C
REVERSE VOLTAGE : V
Unit
V
V
µA
µA
pF
pF
R
(
F
=
10mA
I
I
F
=
100mA
R
=
10V
V
R
=
40V
V
V
R
=
10V, f=1MHz
V
R
=
0V
40
V)
Fig.2 Reverse temperature
chraracteristics
Conditions
100
pF)
(
T
50
20
10
5
2
CAPACITANCE BETWEEN TERMINALS : C
0
04268 1410 12
REVERSE VOLTAGE : V
Fig.3 Capacitance between
terminals chraracteristics
R
(
V)
20
I surge (A)
10
0
100µ 10m1m 100m 1
PULSE WIDTH (sec)
Fig.4 Surge current
chraracteristics
Ta=25˚C
I surge
PULSE WIDTH
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