ROHM RB451F Datasheet
Diodes
Schottky barrier diode
RB451F
Applications
!!!!
Low power rectification
External dimensions
!!!!
RB451F
(Units : mm)
Features
!!!!
1) Small surface mounting type. (UMD3)
2) Low V
F
. (VF=0.45V Typ. at 100mA)
3) High reliability.
Construction
!!!!
Silicon epitaxial planar
Circuit
!!!!
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge current
Junction temperature
Storage temperature Tstg
∗ 60Hz for 1
(Ta = 25°C)
RM
R
O
∗
I
FSM
Tj 125
2.0±0.2
1.3±0.1
0.650.65
3 C
0.3±0.1
(All leads have the same dimensions)
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
40 V
40 V
0.1 A
1A
°C
−40~+125
°C
0.9±0.1
0.3 0.6
2.1±0.1
1.25±0.1
0.15±0.05
0~0.1
0.1Min.
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Note) ESD sensitive product handling required.
(Ta = 25°C)
V
V
F1
F2
I
R
C
T
−−0.55 V IF=100mA
−−0.34 V IF=10mA
−−30 µA
− 6.0 − pF
V
R
=10V
R
=10V, f=1MHz
V
Diodes
Electrical characteristic curves
!!!!
1
100m
(A)
F
10m
1m
°C
Ta=125°C
75
°C
25°C
25
100µ
FORWARD CURRENT : I
10µ
0
−
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : V
Fig. 1 Forward characteristics
100
80
Typ.
pulse measurement
F
(V)
(Ta = 25°C)
10m
1m
(A)
R
100µ
10µ
REVERSE CURRENT : I
0.1µ
Typ.
75
°C
25
°C
pulse measurement
R
(V)
Ta=125°C
1µ
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : V
Fig. 2 Reverse characteristics
100
pF)
(
T
10
1
0.1
CAPACITANCE BETWEEN TERMINALS : C
0 5 10 15 20 25
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristics
RB451F
R
(V
)
60
40
Io CURRENT (%)
20
0
25 50 75 100 125
0
AMBIENT TEMPERATURE : Ta (°C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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