ROHM RB450F Datasheet
Diodes
Schottky barrier diode
RB450F
Applications
!!!!
Low current rectification
Features
!!!!
1) Small surface mounting type. (UMD3)
R
2) Low I
3) High reliability.
!!!!
Silicon epitaxial planar
. (IR=80nA Typ.)
Construction
External dimensions
!!!!
2.0±0.2
1.3±0.1
0.650.65
3 F
0.3±0.1
(All leads have the same dimensions)
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
(Units : mm)
2.1±0.1
1.25±0.1
0.9±0.1
0.3 0.6
0.15±0.05
RB450F
0~0.1
0.1Min.
Circuit
!!!!
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge current
Junction temperature 125
Storage temperature
∗60Hz for 1
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
Reverse current I
Capacitance between terminals − 6.0 − pF V
Note) ESD sensitive product handling required.
(Ta = 25°C)
RM
R
O
∗
I
FSM
Tj
Tstg −40
(Ta = 25°C)
R
C
45 V
40 V
0.1 A
1A
~
+125
F
−−0.45 V IF=10mA
−−1 µAVR=10V
T
°C
°C
R
=10V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1
A)
100m
(
F
10m
°C
75
Ta=125°C
1m
100µ
FORWARD CURRENT : I
10µ
0
Fig. 1 Forward characteristics
100
80
25°C
−25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : V
F
(V
)
(Ta = 25°C)
100µ
A)
(
100n
REVERSE CURRENT : IR
1m
Ta=125°C
10µ
75°C
1µ
25°C
10n
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
100
pF)
(
T
50
20
10
5
2
CAPACITANCE BETWEEN TERMINALS : C
0
0
2 4 6 8 101214
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristics
RB450F
R
(V)
60
40
Io CURRENT (%)
20
0
25 50 75 100 125
0
AMBIENT TEMPERATURE : Ta (°C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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