ROHM RB421D, RB425D Datasheet
Diodes
Schottky barrier diode
RB425D / RB421D
Applications
!!!!
Low power rectification
Features
!!!!
1) Small surface mounting type. (SMD3)
2) Low V
3) High reliability.
!!!!
Silicon epitaxial planar
!!!!
F
. (VF=0.45V Typ. at 100mA)
Construction
Marking
RB425D
D3L
External dimensions
!!!!
2.9±0.2
1.9±0.2
0.95 0.95
∗
0.4
(All leads have the same dimensions)
∗Marking
RB425D : D3L
RB421D : D3C
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
RB425D / RB421D
(Units : mm)
+0.2
1.1
−0.1
0.8±0.1
+0.2
−0.1
2.8±0.2
1.6
+0.1
−0.05
0.15
+0.1
−0.06
0~0.1
0.3~0.6
RB421D
D3C
Absolute maximum ratings
!!!!
Parameter Symbol Limits
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge curren
Junction temperature 125
Storage temperature
∗ 60Hz for 1
Electrical characteristics
!!!!
Parameter
Forward voltage V
Forward voltage V
Reverse current I
Capacitance between terminals − 6.0 − pF V
Note) ESD sensitive product handling required.
(Ta = 25°C)
Unit
RM
R
O
∗
I
FSM
Tj
Tstg −40
40
40
0.1
1
~+
125
V
V
A
A
°C
°C
(Ta = 25°C)
Symbol Min. Typ. Max. Unit Conditions
F1
F2
R
C
T
−−0.55 V IF=100mA
−−0.34 V IF=10mA
−−30 µAVR=10V
Circuit
!!!!
RB425D RB421D
R
=10V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1
100m
(A)
F
10m
°C
75
Ta=125°C
FORWARD CURRENT : I
1m
100µ
10µ
25°C
−25°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : V
Fig. 1 Forward characteristics
100
80
Typ.
pulse measurement
F
(V)
(Ta = 25°C)
10m
(A)
R
100µ
REVERSE CURRENT : I
0.1µ
Typ.
°C
°C
pulse measurement
R
(V)
Ta=125°C
1m
75
10µ
1µ
0 5 10 15 20 25 30 35
25
REVERSE VOLTAGE : V
Fig. 2 Reverse characteristics
RB425D / RB421D
100
(pF)
T
C
10
1
CAPACITANCE BETWEEN TERMINALS :
0.1
0 5 10 15 20 25
REVERSE VOLTAGE
Fig. 3 Capacitance between
terminals characteristics
: VR (V)
60
40
Io CURRENT (%)
20
0
0
25 50 75 100 125
AMBIENT TEMPERATURE : T
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
a (°C)
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