ROHM RB420D Datasheet
Diodes
Schottky barrier diode
RB420D
RB420D
Applications
!
External dimensions
!
Low power rectification
Features
!
1) Small surface mounting type. (SMD3)
R
2) Low I
. (IR=50nA Typ.)
3) High reliability
Construction
!
Silicon epitaxial planar
ROHM : SMD3
EIAJ : SC-59
Circuit
!
Absolute maximum ratings
!
(Ta=25°C)
Parameter Symbol Limits Unit
I
FSM
T
RM
R
O
j
T
stg
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge current
∗
Junction temperature 125 ˚C
Storage temperature ˚C
∗ 60Hz for 1
40 V
40 V
0.1 A
1A
−40∼+125
JEDEC : SOT-346
(Units : mm)
2.9±0.2
1.9±0.2
0.95 0.95
D 3 B
+0.2
−0.1
2.8±0.2
1.6
+0.1
0.4
−0.05
(All leads have the same dimensions)
0.15
1.1
+0.1
−0.06
+0.2
−0.1
0.8±0.1
0~0.1
0.3∼0.6
Electrical characteristics
!
(Ta=25°C)
Parameter Symbol Min.
Forward voltage
Reverse current
Capacitance between terminals −
Note) ESD sensitive product handling required.
F
V
R
I
C
T
Typ.
−
−
Max.
−
0.45
−
6.0
Unit
1
µA
− pF
I
F
V
=10mA
VR=10V
R
=10V, f=1MHz
V
Conditions
Diodes
Electrical characteristic curves
!
1
A)
100m
(
O
10m
1m
100µ
FORWARD CURRENT : I
10µ
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Fig.1 Forward characteristics
75˚C
˚C
25
Ta=125˚C
FORWARD VOLTAGE : V
˚C
−25
F
(
V)
(Ta=25°C)
(A)
R
REVERSE CURRENT : I
1m
100µ
10µ
1µ
100n
10n
0 5 10 15 20 25 30 35
Ta=125˚C
75˚C
25˚C
REVERSE VOLTAGE : V
R
Fig.2 Reverse characteristics
(V)
RB420D
100
pF)
(
50
20
10
5
2
CAPACITANCE BETWEEN TERMINALS : CT
0
02468101214
REVERSE VOLTAGE : V
Fig.3 Capacitance between
terminals characteristics
R
(
V)
Ta=25˚C
20
10
SURGE CURRENT : I surge (A)
0
100µ 1m 10m 100m 1
PULSE WIDTH (sec)
PULSE WIDTH
Fig.4 Surge current characteristics
I surge
P=50%
100
80
60
40
Io CURRENT (%)
20
0
0
25 50 75 100 125
AMBIENT TEMPERATURE : Ta (˚C)
Fig.5 Derating curve
(mounting on glass epoxy PCBs)
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