ROHM RB411D Datasheet
Diodes
Schottky barrier diode
RB411D
Applications
!!!!
Low power rectification
For switching power supply
Features
!!!!
1) Small surface mounting type. (SMD3)
2) Low V
3) High reliability.
!!!!
Silicon epitaxial planar
F
. (VF=0.43V Typ. at 0.5A)
Construction
External dimensions
!!!!
2.9±0.2
1.9±0.2
0.95 0.95
D 3 E
+0.1
0.4
−0.05
(All leads have the same dimensions)
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
(Units : mm)
+0.2
−0.1
2.8±0.2
1.6
0.15
RB411D
+0.2
1.1
−0.1
0.8±0.1
0~0.1
+0.1
−0.06
0.3~0.6
Circuit
!!!!
Absolute maximum ratings
!!!!
(Ta = 25°C)
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge current
Junction temperature 125
Storage temperature
∗ 60Hz for 1
Electrical characteristics
!!!!
RM
R
O
∗
I
FSM
T
j
T
stg
(Ta = 25°C)
40 V
20 V
0.5 A
3A
°C
−40~+125
°C
Parameter Symbol Min. Typ. Max. Unit Conditions
F1
Forward voltage V
Forward voltage V
Reverse current I
Capacitance between terminals − 20 − pF V
Note) sensitive product handling required.
C
−−0.3 V IF=10mA
F2
−−0.5 V IF=500mA
R
−−30 µAVR=10V
T
R
=10V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1
100m
(A)
F
FORWARD CURRENT : I
°C
°C
10m
100µ
10µ
1m
0
°C
25
=
Ta=125
Ta=75
Ta
=−
Ta
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : V
°C
25
Typ.
pulse measurement
Fig. 1 Forward characteristics
F
(V)
(Ta = 25°C)
10m
(A)
R
100µ
10µ
REVERSE CURRENT : I
0.1µ
Ta=125
°C
1m
Ta=75
°C
Ta=25
°C
1µ
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : V
Typ.
pulse measurement
R
(V)
Fig. 2 Reverse characteristics
1 000
pF)
(
T
100
10
CAPACITANCE BETWEEN TERMINALS : C
1
0
510152025
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristic
RB411D
R
(V)
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