ROHM RB400D Datasheet
Diodes
Schottky barrier diode
RB400D
RB400D
Applications
!!!!
High frequency rectification
Switching power supply
Features
!!!!
1) Small surface mounting type. (SMD3)
R
2) Low I
. (IR=1µA Typ.)
3) High reliability.
Construction
!!!!
Silicon epitaxial planar
Circuit
!!!!
External dimensions
!!!!
2.9±0.2
1.9±0.2
0.95 0.95
D 3 A
+0.1
0.4
−0.05
(All leads have the same dimensions)
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
(Units : mm)
+0.2
−0.1
2.8±0.2
1.6
0.15
1.1
+0.1
−0.06
+0.2
−0.1
0.8±0.1
0~0.1
0.3~0.6
Absolute maximum ratings
!!!!
(Ta = 25°C)
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge current I
FSM
RM
R
O
40 V
40 V
0.5 A
3A
Junction temperature Tj 125 °C
Storage temperature Tstg °C
Electrical characteristics
!!!!
(Ta = 25°C)
−40~+125
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between
terminals
Note) ESD Sensitive product handling required.
V
R1
I
I
R2
C
C
F
t
t
−−0.55 V IF=0.5A
−−50 µAVR=30V
−−30 µAVR=10V
− 125 − pF VR=0V, f=1MHz
− 20 − pF VR=10V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1
100m
(A)
F
FORWARD CURRENT : I
10m
1m
100µ
10µ
1µ
0.5
75°C
°C
Ta=125°C
25
°C
−25
Typ.
pulse measurement
0 0.1 0.2 0.3 0.4 0.5 0.70.6
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
(Ta = 25°C)
10m
1m
(A)
R
100µ
10µ
REVERSE CURRENT : I
0.1µ
Typ.
pulse measurement
Ta=125°C
Ta=75°C
1µ
0 5 10 15 20 25 30 35
Ta=25°C
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
1 000
(pF)
T
100
10
CAPACITANCE BETWEEN TERMINALS : C
1
0
5 10152025
REVERSE VOLTAGE : V
Fig.3 Capacitance between
terminals characteristics
RB400D
R
(V)
POWER DISSIPATION : Pd (W)
0
25 125
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Derating curve
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