ROHM RB225T-60 Technical data

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Diodes

Schottky barrier diode

RB225T-60

zApplications zExternal dimensions (Unit : mm) zStructure

Switching power supply

zFeatures

1)

Cathode common type.

10.0±0.3

　　　 0.1

(TO-220)

2) Low I

R

3) High reliability

zConstruction

Silicon epitaxial planar

①

1.2

1.3

0.8

(1) (2) (3)

12.0±0.2

5.0±0.2 8.0±0.2

13.5MIN

ROHM : ＴO220FN

Manu facture Date

①

zAbsolute maximum ratings (Ta=25°C)

Reverse voltage (repetitive peak) 60
R 60

everse voltage (DC)
Average rectified forward current（*1
Forward current surge peak （60Hz・1cyc）（*1
Junction temperature 150
Storage temperature -40 to +150

(*1)Tc=100℃max Per chip : Io/2

Parameter Limits

）

Symbol Unit

V

RM

V

R

Io A

）

I

FSM

Tj

Tstg

zElectrical characteristic (Ta=25°C)

Forward characteristics

Reverse characteristics

Symbol Min. Typ. Max. Unit

V

F

I

R

- - 0.63 V

- - 600 µA

Thermal impedance θjc - - 1.75

　 0.2

15.0±0.4

8.0

0.7±0.1

0.05

4.5±0.3

　　　 0.1

2.8±0.2

　　　 0.1

2.6±0.5

30

100

=15A

I

F

V

R

℃

/W junction to case

RB225T-60

V
V

A

℃
℃

ConditionsParameter

=60V

Rev.A 1/3

RB225T-60

Diodes

zElectrical characteristic curves

PEAK SURGE

FORWARD CURRENT:IFSM(A)

EPEAK SURG

Rev.A 2/3

100

Ta=150℃

10

Ta=125℃

1

0.1

FORWARD CURRENT:IF(A)

0.01
0 100 200 300 400 500 600 700

FORWARD VOL TAGE：VF(mV)

VF-IF CHARACTERISTICS

600

590

580

570

560

FORWARD VOL TAGE:VF(mV)

550

300

250

200

150

100

50

0

1000

100

FORWARD CURRENT:IFSM(A)

10

1 10 100

AVE:580.0mV

VF DISPERSION M AP

AVE:176.0A

IFSM DISRESION MAP

TIME:t(ms)

IFSM-t CHARACTERISTICS

Ifsm

Ta=75℃

Ifsm

Ta=-25℃

Ta=25℃

Ta=25℃

IF=15A

n=30pcs

8.3ms

t

1cyc

1000000

100000

10000

1000

100

10

REVERSE CURRENT:IR(uA)

1

0.1
0 102030405060

500

450

400

350

300

250

200

150

100

REVERSE CURRENT:IR(uA)

50

0

30

25

20

15

10

5

RESERVE RECOVERY TIME:trr(ns)

0

100

IM=100mA IF=10A

10

TRANSIENT

1

THAERMAL IMPEDANCE:Rth (℃/W)

0.1

0.001 0.1 10 1000

Ta=150℃

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTI CS

AVE:70.1nA

IR DISPERSION M AP

Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs

AVE:23.3pF

trr DISP ERSION MAP

time

1ms

300us

TIME:t(s)

Rth-t CHARACTERISTICS

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

Ta=25℃
VR=60V
n=30pcs

Rth(j-a)

Rth(j-c)

10000

1000

100

TERMINALS:Ct(pF)

10

CAPACITANCE BETWEEN

1

0102030

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

2200

2150

2100

2050

2000

TERMINALS:Ct(pF)

CAPACITANC E BETWEEN

1950

1900

1000

100

PEAK SURGE

10

FORWARD CURRENT:IFSM(A)

1

1 10 100

50

40

30

20

FORWARD POWER

DISSIPATION:Pf(W)

10

0

0 1020304050

AVE:2030.9pF

Ct DISPERSION MAP

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERI STICS

D=1/2

Sin(θ＝180)

AVERAGE RECTIFIED

FORWAR D CURREN T：Io( A)

Io-Pf CHARACTERISTI CS

Ifsm

8.3ms

f=1MHz

Ta=25℃
f=1MHz
VR=0V
n=10pcs

1cyc

DC

8.3ms