查询RB160L-90供应商
Diodes
Schottky barrier diode
RB160L-90
zApplicat ions
General rectification
zFeatures
1)
Small power mold type.
(PMDS)
2) Low I
R
3) High reliability
zConstruction
Silicon epitaxial planar
zAbsolute maximum ratings (Ta=25°C)
Rever se voltage (repetitive peak)
Reverse voltage (DC)
Average rectifi ed forward current
Forward current surge peak （60Hz・1cyc
Junction temperature
Sto rage t emper atuer
(*1) Mounted on epoxy board. 180°Half sine wave
Parameter
zElectrical characteristic (Ta=25°C)
F
orward voltage
Reverse current
Symbol Min. Typ. Max. Unit
V
F
I
R
zExternal dimensions (Unit : mm)
2.6±0.2
44
① ②
4.5±0.2
1.5±0.2
ROHM : PMDS
JEDEC : SOD-106
①
②
Manu factu re Date
zT aping dime nsions (Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.12.9±0.1
Symbol Unit
V
RM
V
R
Io A
）
I
FSM
Tj
Tstg
--0.73V
--100µA
2.0±0.2
-40 to +150
1.2±0.3
0.1±0.02
0.1
Limits
150
95
90
30
1
zLand size figure (Unit : mm)
2.0
2.0
5.0±0.3
PMDS
zStructure
φ1.55±0.05
1.75±0.1
5.5±0.05
12±0.2
9.5±0.1
5.3±0.1
0.05
φ1.55
V
V
A
℃
℃
ConditionsParameter
=1.0A
I
F
=90V
V
R
RB160L-90
4.2
0.3
2.8MAX
1/3
Diodes
zElectrical characteristic curves
1
0.1
Ta=150℃
0.01
FORWARD CURRENT:IF(A)
0.001
0 100 200 300 400 500 600 700
Ta=75℃
Ta=125℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=25℃
Ta=-25℃
650
640
Ta=25℃
IF=1A
n=30pcs
630
620
AVE:632.1mV
FORWARD VOLTAGE:VF(mV)
610
600
VF DISPERSION MAP
200
150
RGE
100
K SU
PEA
50
FORWARD CURRENT:IFSM(A)
0
IFSM DISRESION MAP
Ifsm
8.3ms
AVE:56.0A
150
100
Ifsm
t
50
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
110100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1cyc
Ta=150℃
10000
1000
100
10
1
0.1
REVERSE CURRENT:IR(uA)
0.01
0 102030405060708090
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
90
80
70
60
50
40
30
REVERSE CURRENT:IR(uA)
20
10
0
30
25
20
15
10
5
RESERVE RECOVERY TIME:trr(ns)
0
1000
IM=10mA IF=0.5A
100
10
TRANSIENT
1
THAERMAL IMPEDANCE:Rth (℃/W)
0.1
0.001 0.01 0.1 1 10 100 1000
AVE:478.3nA
σ:36.1612nA
AVE:4.655uA
IR DISPERSION MAP
AVE:7.40ns
trr DISPERSION MAP
1ms
time
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
Ta=25℃
VR=90V
VR=100V
n=30pcs
n=30pcs
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Rth(j-a)
Rth(j-c)
RB160L-90
1000
f=1MHz
100
10
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
190
180
170
160
150
140
130
TERMINALS:Ct(pF)
120
CAPACITANCE BETWEEN
110
100
100
50
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
1 10 100
2
1
FORWARD POWER
DISSIPATION:Pf(W)
0
012
AVE:149.6pF
Ct DISPERSION MAP
Ifsm
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3
8.3ms
1cyc
Ta=25℃
f=1MHz
VR=0V
n=10pcs
8.3ms
DCD=1/2
Diodes
0.8
(W)
R
0.6
0.4
REVERSE POWER
DISSIPATION:P
0.2
30
25
20
15
10
ELECTROSTATIC
5
DISCHARGE TEST ESD(KV)
0
1
D=1/2
DC
Sin(θ＝180)
0
0 102030405060708090
REVERSE VOLTAGE:VR(V)
VR-P
CHARACTERISTICS
R
AVE:10.7kV
AVE:1.70kV
C=200pF
R=0Ω
ESD DISPERSION MAP
C=100pF
R=1.5kΩ
3
2.5
2
DC
1.5
D=1/2
1
AVERAGE RECTIFIED
Sin(θ＝180)
FORWARD CURRENT:Io(A)
0.5
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
0A
0V
Derating Curveﾞ(Io-Ta)
RB160L-90
Io
T
D=t/T
VR=45V
Tj=150℃
VR
t
3
2.5
2
DC
1.5
D=1/2
1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Sin(θ＝180)
0.5
0
0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃)
0A
0V
Derating Curve(Io-Tc)
t
T
Io
VR
D=t/T
VR=45V
Tj=150℃
3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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