ROHM RB160L-90 Technical data
查询RB160L-90供应商
Diodes
Schottky barrier diode
RB160L-90
zApplicat ions
General rectification
zFeatures
1)
Small power mold type.
(PMDS)
2) Low I
R
3) High reliability
zConstruction
Silicon epitaxial planar
zAbsolute maximum ratings (Ta=25°C)
Rever se voltage (repetitive peak)
Reverse voltage (DC)
Average rectifi ed forward current
Forward current surge peak （60Hz・1cyc
Junction temperature
Sto rage t emper atuer
(*1) Mounted on epoxy board. 180°Half sine wave
Parameter
zElectrical characteristic (Ta=25°C)
F
orward voltage
Reverse current
Symbol Min. Typ. Max. Unit
V
F
I
R
zExternal dimensions (Unit : mm)
2.6±0.2
44
① ②
4.5±0.2
1.5±0.2
ROHM : PMDS
JEDEC : SOD-106
①
②
Manu factu re Date
zT aping dime nsions (Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.12.9±0.1
Symbol Unit
V
RM
V
R
Io A
）
I
FSM
Tj
Tstg
--0.73V
--100µA
2.0±0.2
-40 to +150
1.2±0.3
0.1±0.02
0.1
Limits
150
95
90
30
1
zLand size figure (Unit : mm)
2.0
2.0
5.0±0.3
PMDS
zStructure
φ1.55±0.05
1.75±0.1
5.5±0.05
12±0.2
9.5±0.1
5.3±0.1
0.05
φ1.55
V
V
A
℃
℃
ConditionsParameter
=1.0A
I
F
=90V
V
R
RB160L-90
4.2
0.3
2.8MAX
1/3
Diodes
zElectrical characteristic curves
1
0.1
Ta=150℃
0.01
FORWARD CURRENT:IF(A)
0.001
0 100 200 300 400 500 600 700
Ta=75℃
Ta=125℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=25℃
Ta=-25℃
650
640
Ta=25℃
IF=1A
n=30pcs
630
620
AVE:632.1mV
FORWARD VOLTAGE:VF(mV)
610
600
VF DISPERSION MAP
200
150
RGE
100
K SU
PEA
50
FORWARD CURRENT:IFSM(A)
0
IFSM DISRESION MAP
Ifsm
8.3ms
AVE:56.0A
150
100
Ifsm
t
50
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
110100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1cyc
Ta=150℃
10000
1000
100
10
1
0.1
REVERSE CURRENT:IR(uA)
0.01
0 102030405060708090
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
90
80
70
60
50
40
30
REVERSE CURRENT:IR(uA)
20
10
0
30
25
20
15
10
5
RESERVE RECOVERY TIME:trr(ns)
0
1000
IM=10mA IF=0.5A
100
10
TRANSIENT
1
THAERMAL IMPEDANCE:Rth (℃/W)
0.1
0.001 0.01 0.1 1 10 100 1000
AVE:478.3nA
σ:36.1612nA
AVE:4.655uA
IR DISPERSION MAP
AVE:7.40ns
trr DISPERSION MAP
1ms
time
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
Ta=25℃
VR=90V
VR=100V
n=30pcs
n=30pcs
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Rth(j-a)
Rth(j-c)
RB160L-90
1000
f=1MHz
100
10
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
190
180
170
160
150
140
130
TERMINALS:Ct(pF)
120
CAPACITANCE BETWEEN
110
100
100
50
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
1 10 100
2
1
FORWARD POWER
DISSIPATION:Pf(W)
0
012
AVE:149.6pF
Ct DISPERSION MAP
Ifsm
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3
8.3ms
1cyc
Ta=25℃
f=1MHz
VR=0V
n=10pcs
8.3ms
DCD=1/2
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