ROHM RB160L-60 Datasheet
Diodes
Schottky barrier diode
RB160L–60
RB160L-60
Applications
!
!
High frequency rectification
For switching power supply.
CATHODE MARK
Features
!
1) Compact power mold (PMDS)
2) Low V
F
. (VF=0.55V Typ. at 1A)
3) High reliability
ROHM : PMDS
Construction
!
EIAJ : −
JEDEC : SOD-106
Silicon epitaxial Planar
Absolute maximum ratings
!
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current
Peak forward surge current
Junction temperature Tj 125 °C
Storage temperature −40 ∼ +125
* When mounted on a PCBs board
*
(Ta = 25°C)
RM
R
I
O
I
FSM
Tstg °C
60 V
60 V
1A
30 A
External dimensions
1.5±0.2
2.6±0.2
(Units : mm)
1.2±0.3
+0.02
2.0±0.2
0.1
−0.1
4.5±0.2
Date of manufacture EX. RB160L-60→4,4
Manufacture years EX. 1999.7→9,7
5.0±0.3
Electrical characteristics
!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
Reverse current I
(Ta = 25°C)
F
R
−
−−0.5 mA VR = 60V
− 0.58 V
F
I
= 1.0A
Diodes
Electrical characteristic curves
!
10
(A)
F
1
100m
CURRENT : I
10m
FORWARD
125°C
1m
0
0.1
Fig.1 Forward characteristics
°C
−25
°C
25
°C
75
0.3
0.2
FORWARD VOLTAGE : VF (V)
0.5
0.4 0.6 0.8
(Ta = 25°C)
0.7
10m
125°C
1m
(A)
R
100µ
75°C
10µ
25°C
1µ
CURRENT : I
100n
−25°C
10
n
REVERSE
1
n
0
20
10
30
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
RB160L-60
1n
(PF)
T
100
TERMINAL CAPACITANCE : C
40
60
50
70
10
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
350 5 10 15 20 25 30
2.0
DC
D=0.8
D=0.5
sine wave
1.0
D=0.3
D=0.2
D=0.1
D=0.05
0.0
25
0
AMBIENT TEMPERATURE : Ta (˚C)
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
50 75
D=Tp / T
VR=VRM / 2
100
Fig.4 Derating curve (lo-Ta)
2.0
DC
D=0.8
D=0.5
sine wave
1.0
D=0.3
D=0.2
D=0.1
D=0.05
0.0
25
125
0
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
50 75
CASE TEMPERATURE : Tc(C)
Fig.5 Derating curve (lo-Tc)
D=Tp / T
VR=VRM / 2
100
125
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