ROHM RB083L-20 Datasheet
Diodes
Schottky barrier diode
RB083L-20
RB083L-20
!Applications
High frequency rectification
For switching power supply
!Features
1) Compact power mold type. (PMDS)
2) Ultra low V
3) I
=5A guaranteed despite the size.
O
/ Low IR.
F
!Construction
Silicon epitaxial planar
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
V
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
(60Hz 1 )
Junction temperature
Storage temperature
∗ When mounted on alumina PCBs (82×30×1.0mm), Tc Max.=90°C
∗
RM
V
O
I
FSM
I
Tj
Tstg
R
Limits
25
20
5
70
125
−40~+125
!External dimensions (Units : mm)
1.5±0.2
CATHODE MARK
57
2.6±0.2
ROHM : PMDS
EIAJ : −
JEDEC : SOD-106
Unit
V
V
A
A
°C
°C
4.5±0.2
Date of manufacture EX. 1999.12 → 9,C
2.0±0.2
1.2±0.3
+0.02
0.1
−0.1
5.0±0.3
!
Electrical characteristics
Parameter
Forward voltage
Reverse current
(Ta=25°C)
Symbol
V
F
I
R
Min.
−
−
Typ.
−
−
Max.
0.39
500
Unit
V
µAV
IF=3.0A
R
=20V
Conditions
Diodes
!Electrical characteristic curves (Ta=25°C)
(A)
F
100m
10m
FORWARD CURRENT : I
10
Ta=125°C
1
Ta=75°C
Ta=25°C
A)
100m
(
R
REVERSE CURRENT : I
10m
100µ
RB083L-20
1
Ta=125°C
Ta=75°C
1m
Ta=25°C
10000
pF)
(
1000
100
1m
0 0.2 0.3 0.4 0.50.1
FORWARD VOLTAGE : V
F
(V)
Fig.1 Forward characteristics
7.0
DC
6.0
D=0.8
5.0
D=0.5
4.0
sine wave
3.0
D=0.3
D=0.2
2.0
D=0.1
D=0.05
1.0
0.0
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
25
0
AMBIENT TEMPERATURE : Ta (°C)
50 75
100
Fig.4 Derating curve (lo-Ta)
(When mounted on
alumina PCBs)
10µ
10
0
REVERSE VOLTAGE : V
Fig.2 Reverse characteristics
8.0
DC
D=0.8
7.0
6.0
D=0.5
sine wave
5.0
D=0.3
4.0
D=0.2
3.0
D=0.1
D=0.05
2.0
1.0
0.0
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
125
25
0
50 75
CASE TEMPERATURE : Tc (˚C)
Fig.5 Derating curve (lo-Tc)
(When mounted on
alumina PCBs)
30
20
40
R
(
V)
10
0 102030
CAPACITANCE BETWEEN TERMINALS : CT
REVERSE VOLTAGE : VR
(
V)
Fig.3 Cpacitance between terminals
characteristics
125
100
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