ROHM RB063L-30, RB081L-20 Datasheet
RB081L-20
Diodes
Schottky barrier diode
RB081L-20
z
Applications
High frequency rectification
For switching power supply
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Features
1) Compact power mold type. (PMDS)
2) Ultra l ow V
F
.( VF=0.27V Typ. at 1A )
3) I
O
=5A guaranteed despite the size.
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Construction
Silicon epitaxial planar
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External dimensions
(Units : mm )
ROHM : PMDS
EIAJ : −
JEDEC : SOD-106
Date of manufacture EX. 1999.12 → 9,C
0.1
CATHODE MARK
4.5±0.2
2.6±0.2
2.0±0.2
1.2±0.3
1.5±0.2
39
5.0±0.3
+0.02
−0.1
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Absolute maximum ratings
(T a=25°C)
Parameter Symbol
V
RM
Limits
25
Unit
V
Peak reverse voltage
V
R
20
V
DC reverse voltage
I
O
1
∗
1
5
A
Mean rectifying current
I
O
2
∗
2
4
A
I
FSM
70
A
Peak forward surge current
(60Hz 1 )
Tj
125
˚C
Junction temperature
Tstg
−40∼+125
˚C
Storage temperature
∗1 When mounted on an alumina substrates (82×30×1.0mm), Tc Max.=90˚C
∗
2
When mounted on an alumina substrates (82×30×1.0mm), Ta=25˚C
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Electrical characteristics
(T a=25°C)
Parameter
Forward voltage
Reverse current
Conditions
Symbol
Max. Unit
Typ.
V
F
0.45 V IF=5.0A
I
R
0.7 mA VR=20V
−
−
RB081L-20
Diodes
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Electrical characteristics curves
(Ta=25°C)
0 0.2 0.3 0.4 0.5 0.60.1
100µ
1m
100m
10m
10A
1A
FORWARD CURRENT : I
F
(A)
FORWARD VOLTAGE : V
F
(V)
Ta=125˚C
75
˚C
25
˚C
−25
˚C
Fig.1 Forward characteristics
1µ
10µ
100µ
1m
10m
100m
1
REVERSE CURRENT : I
R
(
A)
REVERSE VOLTAGE : V
R
(
V)
0
10
20
50
75˚C
25˚C
−25˚C
30
40
Ta=125˚C
Fig.2 Reverse characteristics
0 1015202530355
10
100
1n
CAPACITANCE BETWEEN TERMINALS : CT
(
pF)
REVERSE VOLTAGE : VR
(
V)
Fig.3 Capacitance between terminals
characteristics
Fig.4 Derating curve (lo-Ta)
0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
DC
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
AMBIENT TEMPERATURE : Ta (˚C)
25
50 75
100
125
7.0
D=0.05
D=0.1
D=0.2
D=0.3
sine wave
D=0.5
D=0.8
Fig.5 Derating curve (lo-Tc)
0
4.0
5.0
6.0
7.0
0.0
1.0
2.0
3.0
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
CASE TEMPERATURE : Tc (˚C)
25
50 75
100
125
8.0
D=0.05
D=0.1
D=0.2
D=0.3
sine wave
D=0.5
D=0.8
DC
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