Diodes
Schottky barrier diode
RB060L-40
RB060L-40
!Applications
High frequency rectification
For switching power supply
!Features
1) Compact power mold type. (PMDS)
2) I
=2A guaranteed despite the size.
O
3) Low I
!
. (IR=10µA Typ.)
R
Construction
Silicon epitaxial planar
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Peak reverse voltage VRM 40 V
DC reverse voltage
Mean rectifying current
Peak forward surge
2
∗
current
(60Hz,1 )
Junction temperature Tj 125 ˚C
Storage temperature
∗1 When mounted on an alumina PCBs (82×30×1.0 mm board),
180˚ half sine wave.
∗2 60Hz,
VR
1
∗
IO
IFSM 70 A
Tstg −40∼+125 ˚C
40 V
2.0 A
!!!!External dimensions (Units : mm)
1.5±0.2
CATHODE MARK
36
4.5±0.2
2.6±0.2
ROHM : PMDS
EIAJ : −
JEDEC : SOD-106
·····Date of manufacture EX. 1999.12 → 9, C
2.0±0.2
1.2±0.3
+0.02
0.1
−0.1
5.0±0.3
!!!!
Electrical characteristics
Parameter Symbol Max. Unit Conditions
Forward voltage
Reverse current I
Thermal resistance
(Ta=25°C)
V
F1
F2
V
R
θj-a 90 ˚C / W When mounting on alumina PCBs
θj-a 120 ˚C / W When mounting on glass epoxy PCBs
0.50 V
0.45 V
1.0 mA
F
=2.0A
I
F
=1.0A
I
R
V
=40V
Diodes
RB060L-40
!!!!Electrical characteristics curves (Ta=25°C)
10
(A)
F
1
˚C
100m
Ta=125˚C
Ta=25
Ta=75˚C
FORWARD CURRENT : I
10m
0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : V
Fig.1 Forward characteristics
4.0
A)
(
O
DC
3.0
D=0.8
D=0.5
sine
2.0
D=0.3
D=0.2
D=0.1
1.0
D=0.05
I
F
I
O
Tp
D=Tp/T
V
R=VRM
F
(V)
T
/2
10m
(A)
R
100m
10m
REVERSE CURRENT : I
100n
4.0
A)
(
O
3.0
2.0
1.0
Ta=125˚C
1m
Ta=75˚C
Ta=25˚C
1m
0 5 10152025303540
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
I
F
I
O
Tp
D=Tp/T
R=VRM
V
T
/2
D=0.8
sine
D=0.3
D=0.2
D=0.1
D=0.05
DC
D=0.5
1n
F)
(
T
100p
CAPACITANCE BETWEEN TERMINALS : C
10p
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : V
Fig.3 Capacitance between
terminals characteristics
4.0
A)
(
O
DC
3.0
D=0.8
D=0.5
sine wave
2.0
D=0.3
D=0.2
D=0.1
1.0
D=0.05
R
(V)
T
F
T
O
Tp
T
D=Tp/T
R=VRM
/2
V
AVERAGE RECTIFIED FORWARD CURRENT : I
0
25 50 75 100 125
0
AMBIENT TEMPERATURE : Ta (˚C)
Fig.4 Derating curve
(when mounted on an
alumina PCBs)
1.4
(W)
F
1.2
1.0
D=0.05
D=0.1
0.8
D=0.2
D=0.3
sine
0.6
0.4
0.2
FORWARD POWER DISSIPATION : P
000.5 1.0 1.5 2.0 2.5 3.0 3.5
AVERAGE RECTIFIED FORWARD CURRENT : I
D=0.5
Tp
I
F
O
I
D=Tp/T
Tj=TjMax.
DC
D=0.8
T
O
Fig.7 Forward power dissipation
AVERAGE RECTIFIED FORWARD CURRENT : I
0
25 50 75 100 125
0
AMBIENT TEMPERATURE : Ta (˚C)
Fig.5 Derating curve
(when mounted on a glass
epoxy PCBs)
1.00
0.80
0.60
0.40
0.20
REVERSE POWER DISSIPATION : PR (W)
0
(
A)
0
Fig.8 Reverse power dissipation
j=Tj
Max.
T
Tp
T
Tj=TjMax.
Dj=Tp/T
5 10152025303540
REVERSE VOLTAGE : VR (V)
AVERAGE RECTIFIED FORWARD CURRENT : I
0
25 50 75 100 125
0
LEAD TEMPERATURE : Tl (˚C)
Fig.6 Derating curve
(when mounted on a glass
epoxy PCBs)
V
R
0
V
R
D=0.05
D=0.1
D=0.2
sine
D=0.8
DC
=
0.3
D
D=0.5