ROHM RB053L-30 Datasheet
Diodes
Schottky barrier diode
RB053L-30
z
zApplications
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High frequency rectification
For switching power supply
z
zFeatures
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1) Compact power mold type. (PMDS)
2) Ultra low V
3) V
RM
z
zConstruction
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Silicon epitaxial planar
/ Low IR.
F
=30V guaranteed.
z
zExternal dimensions (Units : mm)
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1.5±0.2
CATHODE MARK
56
2.6±0.2
4.5±0.2
ROHM : PMDS
EIAJ : −
JEDEC : SOD-106
, ·····
Date of manufacture EX. 1999.12→9, C
RB053L-30
1.2±0.3
+0.02
0.1
−0.1
2.0±0.2
5.0±0.3
z
zAbsolute maximum ratings (T a = 25°C)
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Parameter Symbol
RM
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
(60Hz · 1 )
Junction temperature
Storage temperature
∗TC Max. = 90°C when mounted on alumina PCBs.
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Electrical characteristics
Parameter
Forward voltage
Reverse current
∗
V
R
V
O
I
FSM
I
Tj 125 °C
Tstg −40
(T a = 25°C)
Symbol Typ.Min. Conditions
V
F
I
R
1
I
R
2
Limits
30
30 V
3.0 A
70 A
~
+125 °C
Unit
−−
−−
−−
V
Max.
0.42
90
200
Unit
V
µA
µA
I
F
=3.0A
V
R
V
R
=15V
=30V
Diodes
RB053L-30
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Electrical characteristic curves
10
(A)
1
F
100m
10m
Ta=125
Ta=75
°C
°C
°C
Ta=25
FORWARD CURRENT : I
1m
0 0.2 0.3 0.4 0.50.1
FORWARD VOLTAGE : V
F
Fig.1 Forward characteristics
5.0
(A)
DC
O
D=0.8
4.0
D=0.5
sine
3.0
D=0.3
D=0.2
2.0
D=0.1
D=0.05
1.0
0
AVERAGE RECTIFIED FORWARD CURRENT : I
0 25 50 75 100 125
Tp
=
D
R
=
V
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Derating curve (IO - Ta)
(When mounted on
alumina PCBs)
(V)
I
F
I
O
T
Tp / T
V
RM
/ 2
(T a = 25°C)
100m
(A)
R
100µ
REVERSE CURRENT : I
5.0
(A)
O
4.0
3.0
2.0
1.0
AVERAGE RECTIFIED FORWARD CURRENT : I
Ta=125°C
10m
1m
Ta=75°C
Ta=25°C
10µ
1µ
020304010
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
DC
D=0.8
D=0.5
sine wave
D=0.3
D=0.2
D=0.1
D=0.05
0
0 25 50 75 100 125
Tp
D
=
R
=
V
LEAD TEMPERATURE : TL (°C)
Fig.5 Derating curve (IO - TL)
(When mounted on
alumina PCBs)
I
Tp / T
1000
pF)
(
T
TERMINAL CAPACITANCE : C
100
0102030
REVERSE VOLTAGE : V
R
(V)
Fig.3 Capacitance between
terminals characteristics
F
O
T
V
RM
/ 2
(W)
F
1.2
1.0
0.8
0.6
D=0.05
D=0.2
D=0.1
D=0.3
sine
D=0.5
0.4
0.2
FORWARD POWER DISSIPATION : P
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
AVERAGE RECTIFIED FORWARD CURRENT : I
DC
D=0.8
I
F
I
O
Tp
T
D
=
Tp / T
Tj
=
Tj Max.
O
(A)
1.4
I
Fig.6 Forward power dissipation
characteristics
0.30
W)
(
R
0.25
0.20
0.15
V
R
D=0.05
Tj
=
Tj Max.
Tp
T
=
Tj Max.
Tj
=
Tp / T
D
D=0.1
D=0.2
0
D=0.3
D=0.5
V
R
0.10
0.05
REVERSE POWER DISSIPATION : P
0
0 2 4 6 8 101214161820
REVERSE VOLTAGE : V
R
Fig.7 Reverse power dissipation
characteristics
5.0
(A)
DC
O
DC
sine
D=0.8
(
V)
D=0.8
4.0
D=0.5
sine
3.0
D=0.3
D=0.2
2.0
D=0.1
D=0.05
1.0
0
AVERAGE RECTIFIED FORWARD CURRENT : I
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta (°C)
I
F
I
O
Tp
T
=
Tp / T
D
R
=
V
RM
/ 2
V
Fig.8 Derating curve (IO - Ta)
(when mounted on glass
epoxy PCBs)
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