ROHM RB051L-40 Datasheet

Diodes

Schottky barrier diode

RB051L-40

z

zApplications

zz

High frequency rectification
For switching power supply

z

zFeatures

zz

1) Compact power mold type. (PMDS)

2) Ultra low V

3) V

RM

zzzz

Construction

Silicon epitaxial planar

. (VF=0.29V Typ. at 1A)

F

=40V guaranteed.

z

zExternal dimensions (Units : mm)

zz

1.5±0.2

CATHODE MARK

31

2.6±0.2

4.5±0.2

ROHM : PMDS
EIAJ : −
JEDEC : SOD-106

, ·····

Date of manufacture EX. 1999.12→9, C

RB051L-40

1.2±0.3

+0.02

0.1

−0.1

2.0±0.2

5.0±0.3

zzzz

Absolute maximum ratings

Parameter Symbol
Peak reverse voltage
DC reverse voltage
Mean rectifying current

Peak forward surge current

(60Hz · 1 )

Junction temperature
Storage temperature

∗TL 90°C Max. 180° half sine wave when mounted on an alumina substrate
(82 × 30 × 1.0 mm)

z

zElectrical characteristics (T a = 25°C)

zz

Parameter

Forward voltage

Reverse current

∗

(T a = 2 5°C)

Limits

RM

V

R

V

O

I

FSM

I

Tj 125 °C

Tstg −40

Symbol Typ. Conditions

F

1

V

F

2

V

R

1

I

R

2

I

40
20 V

3.0 A
70 A

~

+125 °C

−

−

−

−

Unit

V

Max.

0.35

0.45

1.0

150

Unit

V
V

mA

µA

F

=1.0A

I

F

=3.0A

I

R

V

R

V

=20V
=15V

Diodes

z

zElectrical characteristic curves (Ta = 25°C)

zz

10

(A)

1

F

100m

10m

C

°

C

5

°

2

1

=

a

T

C

°

5

5

7

2

FORWARD CURRENT : I

1m

0 0.2 0.3 0.4 0.50.1

FORWARD VOLTAGE : V

Fig. 1 Forward characteristics

C

°

5

2

−

F

(V)

100m

(A)

R

100µ

REVERSE CURRENT : I

Ta=125°C

10m

1m

75°C

25°C

10µ

1µ

−25°C

0 2030405010

REVERSE VOLTAGE : V

Fig. 2 Reverse characteristics

RB051L-40

1000

pF)

(

T

100

TERMINAL CAPACITANCE : C

10

01015202530355

R

(V)

REVERSE VOLTAGE

Fig. 3 Capacitance between

terminals characteristics

: V

R

(V)

5.0

(A)

DC
D=0.8

4.0

D=0.5
sine

3.0

D=0.3
D=0.2

2.0

D=0.1
D=0.05

1.0

0

AVERAGE RECTIFIED FORWARD CURRENT : IO

0 25 50 75 100 125

Tp

D
V

AMBIENT TEMPERATURE : Ta (°C)

Fig. 4 Derating curve (IO - Ta)

0.50

W)

(

R

0.40

0.30

0.20

V

R

D=0.05

=

Tj Max.

Tj

Tp
T

=

Tj Max.

Tj

=

Tp / T

D

D=0.1
D=0.2

0

D=0.3
D=0.5

V

R

0.10

REVERSE POWER DISSIPATION : P

0

0 2 4 6 8 101214161820

REVERSE VOLTAGE : V

R

Fig. 7 Reverse power dissipation

characteristics

5.0

(A)

I

F

I

O

T

=

Tp / T

R

=

V

RM

/ 2

DC

O

D=0.8

4.0

D=0.5
sine wave

3.0

D=0.3
D=0.2

2.0

D=0.1
D=0.05

1.0

0

AVERAGE RECTIFIED FORWARD CURRENT : I

0 25 50 75 100 125

I

F

I

O

Tp

T

D

=

Tp / T

R

=

V

RM

/ 2

V

LEAD TEMPERATURE : TL (°C)

Fig. 5 Derating curve (IO - TL)
(When mounted on

1.4

W)

(

F

1.2

1.0

0.8

0.6

D=0.05

D=0.1

D=0.2

D=0.3

sine

D=0.5

0.4

0.2

FORWARD POWER DISSIPATION : P

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

AVERAGE RECTIFIED FORWARD CURRENT : I

DC

D=0.8

I

F

I

O

Tp

T

D

=

Tp / T

Tj

=

Tj Max.

O (A)

Fig. 6 Forward power dissipation

characteristics

almina PCBs)

5.0

(A)

DC

DC

sine

D=0.8

(

V)

D=0.8

4.0

D=0.5
sine

3.0

D=0.3
D=0.2

2.0

D=0.1
D=0.05

1.0

0

AVERAGE RECTIFIED FORWARD CURRENT : IO

0 25 50 75 100 125

AMBIENT TEMPERATURE : Ta (°C)

Tp

=Tp / T

D

R=VRM / 2

V

IF
IO

T

Fig. 8 Derating curve

(when mounted on a glass
epoxy PCBs board)