ROHM RB050L-40 Datasheet

Diodes

Schottky barrier diode

RB050L-40

z

zApplications

zz

For high-frequency rectification
For switching power supplies

z

zFeatures

zz

1) Compact power-mold type. (PMDS)

2) I

=3A guaranteed at this size.

O

3) Low I

. ( IR=16µA T y p. )

R

z

zExternal dimensions (Units : mm)

zz

1.5±0.2

CATHODE MARK

35

1 2

4.5±0.2

RB050L-40

1.2±0.3

+0.02

0.1

−0.1

5.0±0.3

z

zConstruction

zz

Silicon epitaxial planar

z

zAbsolute maximum ratings (T a = 25°C)

zz

Parameter Symbol Limits Unit
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak surge current

∗2

Junction temperature 125 °C
Storage temperature

∗1 When mounted on an alumina board (82×30×1.0mm), 180° Half
sine wave
∗2 60Hz, 1

z

zElectrical characteristics (T a = 25°C)

zz

RM

V

V

R

∗1

I

O

I

FSM

Tj

Tstg

Parameter Symbol Max. Unit Conditions

Forward voltage

Reverse current

Thermal resistance

40 V
40 V

3.0 A
70 A

−40~+125

F

1

V
V

F

2

R

I

0.55 V

0.50 V

1.0 mA

θj-a 90 When mounted on an alumina board.
θj-a 120 When mounted on a glass epoxy board.

25 When mounted on an alumina board.

°C

ROHM : PMDS
EIAJ : −
JEDEC : SOD-106

F

I
I

F

V

°C/W
°C/W
°C/Wθj-l

=3.0A
=1.5A

R

=40V

2.6±0.2

2

1

, ···

Date of manufacture

2.0±0.2

EX. 1999 Dec.

=9, C

Diodes

z

zElectrical characteristic curves (T a = 25°C)

zz

10

(A)

F

1

Ta=125°C

100m

Ta=75

FORWARD CURRENT : I

°C

Ta=25°C

10,000

1,000

(µA)

R

100

10

1

REVERSE CURRENT : I

Ta=125°C

Ta=75°C

Ta=25°C

RB050L-40

1000

(pF)

T

100

10m

0

0.1 0.2 0.3 0.4 0.5

0.6

FORWARD VOLTAGE : VF (V)

Fig. 1 Forward temperature

characteristics

5.0

DC

(A)

O

D=0.8

4.0

D=0.5

sin wave

3.0

D=0.3
D=0.2

2.0

D=0.1
D=0.05

1.0

0025 50 75 100 125

AVERAGE RECTIFIED FORWARD CURRENT : I

LEAD TEMPERATURE : TL (°C)

I

F

I

O

Tp

D=Tp / T

VR=VRM / 2

T

Fig. 4 Derating curve

2.5

(W)

F

2.0

D=0.1

D=0.05

1.5

D=0.2

D=0.3

D=0.5

sine

D=0.8

DC

1.0

F

I

I

0.5

0

0

FORWARD POWER DISSIPATION : P

1.0 2.0 3.0 4.0 5.0

AVERAGE RECTIFIED FORWARD CURRENT : I

Tp

D=Tp / T
Tj=TjMax.

O

T

5.0

O

(A)

Fig. 7 Power dissipation characteristics

0 5 10152025303540

REVERSE VOLTAGE : VR (V)

Fig. 2 Reverse temperature

characteristics

5.0

(A)

O

4.0

DC

3.0

D=0.8

D=0.5

2.0

sine

D=0.3

D=0.2

1.0

D=0.1

D=0.05

00000

AVERAGE RECTIFIED FORWARD CURRENT : I

0

25 50 75 100 125

AMBIENT TEMPERATURE : Ta (°C)

Fig. 5 Derating curve (when mounted

on a glass epoxy board)

1.00

(W)

R

0.80

0.60

Tj=TjMax.

D=Tp / T

0.40

0.20

0

0

5 10152025303540

REVERSE POWER DISSIPATION : P

REVERSE VOLTAGE : VR (V)

Fig. 8 Reverse power dissipation

Tj=TjMax.

Tp

T

V

R

0

V

R

Tp

D=0.2

I

I

D=Tp / T
V

R=VRM

F

O

T

D=0.05
D=0.1

D=0.5

10

CAPACITANCE BETWEEN TERMINALS : C

REVERSE VOLTAGE : VR (V)

350 5 10 15 20 25 30

Fig. 3 Capacitance between terminals

characteristics

5.0

(A)

O

4.0

DC

/ 2

D=0.8

3.0

D=0.5

sine

2.0

D=0.3

D=0.2

D=0.1

1.0

D=0.05

00000

AVERAGE RECTIFIED FORWARD CURRENT : I

0

25 50 75 100 125

Tp

I

D=Tp / T

R=VRM

V

I

F

O

T

/ 2

AMBIENT TEMPERATURE : Ta (°C)

Fig. 6 Derating curve (when mounted

on an alumina board)

DC

D=0.3

sine

D=0.8