ROHM R8008ANX Technical data

Data Sheet

10V Drive Nch MOSFET

R8008ANX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

(1) Gate
(2) Drain
(3) Source

14.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

R8008ANX 

(1) Gate
(2) Drain
(3) Source

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

Symbol Limits Unit

800 V

30 V

8A

32 A

8A

32 A

4A

4.2 mJ

50 W

150 C

55 to 150 C

E

DSS

GSS

DP

SP

I

AS

D

S

AS

ch

stg

*3

*1

*3

*1

*2

*2

*4

D

12.0

8.02.5

1.3

1.2

0.8

2.54 2.62.54

(2)(3)(1)

(1) (3)(2)

1 BODY DIODE

0.75

∗1

 Thermal resistance

Parameter

Channel to Case R

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Symbol Limits Unit

th (ch-c)

2.5 C / W

1/5

2011.10 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

R8008ANX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

800 - - V ID=1mA, VGS=0V

- - 100 AVDS=800V, VGS=0V

3.0 - 5.0 V VDS=10V, ID=1mA

-

*

*

l 2.0 - - S VDS=10V, ID=4.0A

0.79 1.03

- 1080 - pF VDS=25V

- 480 - pF VGS=0V

- 32 - pF f=1MHz

- 32 - ns VDD 400V, ID=4.0A

*

- 50 - ns VGS=10V

*

- 85 - ns RL=100

*

- 30 - ns RG=10

*

- 39 - nC VDD 400V

*

- 8.7 - nC ID=8.0A

*

- 23 - nC VGS=10V

*

ID=4.0A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=8.0A, VGS=0V

2/5

2011.10 - Rev.A