ROHM R8002ANX Technical data

Data Sheet

10V Drive Nch MOSFET

R8002ANX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

(1) Gate
(2) Drain
(3) Source

14.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

R8002ANX 

(1) Gate
(2) Drain
(3) Source

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

Symbol Limits Unit

800 V

30 V

2A

8A

2A

8A

1A

0.265 mJ

35 W

150 C

55 to 150 C

E

DSS

GSS

DP

SP

I

AS

D

S

AS

ch

stg

*3

*1

*3

*1

*2

*2

*4

D

12.0

8.02.5

1.3

(1) (3)(2)

1.2

0.8

2.54 2.62.54

(2)(3)(1)

1 BODY DIODE

0.75

∗1

 Thermal resistance

Parameter

Channel to Case R

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Symbol Limits Unit

th (ch-c)

3.57 C / W

1/6

2011.10 - Rev.A

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Data Sheet

R8002ANX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

800 - - V ID=1mA, VGS=0V

- - 100 AVDS=800V, VGS=0V

3.0 - 5.0 V VDS=10V, ID=1mA

*

- 3.3

*

l 0.5 - - S VDS=10V, ID=1.0A

4.3

- 210 - pF VDS=25V

- 130 - pF VGS=0V

- 14 - pF f=1MHz

- 17 - ns VDD 400V, ID=1.0A

*

- 20 - ns VGS=10V

*

- 33 - ns RL=400

*

- 70 - ns RG=10

*

- 12.7 - nC VDD 400V

*

- 2.7 - nC ID=2.0A

*

- 4.3 - nC VGS=10V

*

ID=1.0A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=2.0A, VGS=0V

2/6

2011.10 - Rev.A

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Data Sheet

R8002ANX

Electrical characteristic curves (Ta=25C)

0

0.1

0.2

0.3

0.4

0.5

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5.5V

VGS=10.0V

VGS=7.0V

VGS=8.0V

VGS=6.0V

VGS=6.5V

VGS=5.0V

Ta=25°C
pulsed

0

0.5

1

1.5

2

0 1 2 3 4 5 6 7 8 9 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=6.0V

VGS=10.0V

VGS=8.0V

VGS=6.5V

VGS=7.0V

VGS=5.5V

VGS=5.5V

Ta=25°C
pulsed

0.001

0.01

0.1

1

10

2.0 3.0 4.0 5.0 6.0 7.0 8.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

2

3

4

5

6

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

0

1

2

3

4

5

6

7

8

9

-50 0 50 100 150

Static Drain-Source On-State Resistance : R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VDS=10V
pulsed

ID=1A

ID=2A

0.1

1

10

100

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

3/6

2011.10 - Rev.A