ROHM R8002ANX Technical data

Data Sheet

10V Drive Nch MOSFET

R8002ANX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

(1) Gate
(2) Drain
(3) Source

14.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

R8002ANX 

(1) Gate
(2) Drain
(3) Source

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

Symbol Limits Unit

800 V

30 V

2A

8A

2A

8A

1A

0.265 mJ

35 W

150 C

55 to 150 C

E

DSS

GSS

DP

SP

I

AS

D

S

AS

ch

stg

*3

*1

*3

*1

*2

*2

*4

D

12.0

8.02.5

1.3

(1) (3)(2)

1.2

0.8

2.54 2.62.54

(2)(3)(1)

1 BODY DIODE

0.75

∗1

 Thermal resistance

Parameter

Channel to Case R

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Symbol Limits Unit

th (ch-c)

3.57 C / W

1/6

2011.10 - Rev.A

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Data Sheet

R8002ANX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

800 - - V ID=1mA, VGS=0V

- - 100 AVDS=800V, VGS=0V

3.0 - 5.0 V VDS=10V, ID=1mA

*

- 3.3

*

l 0.5 - - S VDS=10V, ID=1.0A

4.3

- 210 - pF VDS=25V

- 130 - pF VGS=0V

- 14 - pF f=1MHz

- 17 - ns VDD 400V, ID=1.0A

*

- 20 - ns VGS=10V

*

- 33 - ns RL=400

*

- 70 - ns RG=10

*

- 12.7 - nC VDD 400V

*

- 2.7 - nC ID=2.0A

*

- 4.3 - nC VGS=10V

*

ID=1.0A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=2.0A, VGS=0V

2/6

2011.10 - Rev.A

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Data Sheet

R8002ANX

Electrical characteristic curves (Ta=25C)

0

0.1

0.2

0.3

0.4

0.5

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5.5V

VGS=10.0V

VGS=7.0V

VGS=8.0V

VGS=6.0V

VGS=6.5V

VGS=5.0V

Ta=25°C
pulsed

0

0.5

1

1.5

2

0 1 2 3 4 5 6 7 8 9 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=6.0V

VGS=10.0V

VGS=8.0V

VGS=6.5V

VGS=7.0V

VGS=5.5V

VGS=5.5V

Ta=25°C
pulsed

0.001

0.01

0.1

1

10

2.0 3.0 4.0 5.0 6.0 7.0 8.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

2

3

4

5

6

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

0

1

2

3

4

5

6

7

8

9

-50 0 50 100 150

Static Drain-Source On-State Resistance : R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VDS=10V
pulsed

ID=1A

ID=2A

0.1

1

10

100

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

3/6

2011.10 - Rev.A

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Data Sheet

R8002ANX

0

2

4

6

8

10

0 5 10 15 20 25 30

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Gate-Source Voltage : VGS [V]

Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=2.0A

ID=1.0A

Ta=25°C
pulsed

0.001

0.01

0.1

1

10

0.001 0.01 0.1 1 10

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.8 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.01

0.1

1

10

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.10 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C

f=1MHz
VGS=0V

C

iss

C

oss

C

rss

1

10

100

1000

10000

0.01 0.1 1 10

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒400V
V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

12

0 5 10 15 20

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

T

a

=25°C

VDD=400V
I

D

=2A

Pulsed

4/6

2011.10 - Rev.A

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Data Sheet

R8002ANX

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Rth

(ch-a)

=64.2°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

10

100

1000

0 1 10

Reverse Recovery Time : t

rr

[ns]

Source Current : IS [A]

Fig.15 Reverse Recovery Time vs. Source Current

T

a

=25°C

V

gs

=0V

di/dt=100A/ms
Pulsed

0.001

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

Ta=25°C
Single Pulse

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms
PW = 10ms

5/6

2011.10 - Rev.A

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Data Sheet

R8002ANX

F

it

%

V
V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

VGS

RG

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

RL

VDD

D

I

R

L

V

DD

VDS

Pulse width

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

2

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

6/6

2011.10 - Rev.A

Notes

Notice

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