ROHM R6046FNZ Technical data
Data Sheet
10V Drive Nch MOSFET
R6046FNZ
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching
Packaging specifications Inner circuit
Package Bulk
Type
Code Basic ordering unit (pieces) 360
R6046FNZ
TO-3PF
(1) Gate
(2) Drain
(3) Source
26.5
16.5
14.5
2.0
14.8
15.5
4.5
2.0
0.75
(1) (2) (3)
φ3.6
2.5
5.455.45
0.44
10.0
16.5
5.5
3.0
3.5
2.0
3.0
0.9
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum channel temperature allowed.
=25°C
*4 T
C
=50V, RG=25, Tch=25°C
DD
Thermal resistance
Parameter
Symbol Limits Unit
Channel to Case R
DSS
GSS
D
DP
S
SP
I
AS
E
AS
D
ch
stg
th (ch-c)
600 V
30 V
*3
46 A
*1
115 A
*3
*1
*2
*2
*4
46 A
115 A
23 A
142 mJ
120 W
150 C
55 to 150 C
1.04 C / W
(1) Gate
(2) Drain
(3) Source
(1) (3)(2)
1 BODY DIODE
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1/6
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6046FNZ
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=30V, VDS=0V
600 - - V ID=1mA, VGS=0V
- - 100 AVDS=600V, VGS=0V
3.0 - 5.0 V VDS=10V, ID=1mA
*
-7593
*
l21 35 - SVDS=10V, ID=23A
- 6100 - pF VDS=25V
- 3600 - pF VGS=0V
- 90 - pF f=1MHz
- 77 - ns VDD 300V, ID=23A
*
- 150 - ns VGS=10V
*
- 230 - ns RL=13.04
*
- 80 - ns RG=10
*
- 150 - nC VDD 300V
*
- 40 - nC ID=46A
*
- 60 - nC VGS=10V
*
ID=23A, VGS=10V
m
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward voltage V
Reverse recovery time t
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
*
rr
- - 1.5 V IS=12.5A, VGS=0V
- 145 - ns IS=46A, di/dt=100A/μs
2/6
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6046FNZ
Electrical characteristic curves (Ta=25C)
0
2
4
6
8
10
12
14
16
18
20
22
24
0 1 2 3 4 5 6 7 8 9 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=10.0V
VGS=6.0V
VGS=5.0V
VGS=8.0V
VGS=6.5V
Ta=25°C
pulsed
0
10
20
30
40
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=6.0V
VGS=5.0V
VGS=6.5V
VGS=8.0V
Ta=25°C
pulsed
0.001
0.01
0.1
1
10
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
2
3
4
5
6
-50 0 50 100 150
Gate Threshold Voltage : V
GS(th)
[V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
VDS=10V
ID=1mA
pulsed
10
100
1000
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
20
40
60
80
100
120
140
160
180
200
-50 0 50 100 150
Static Drain-Source On-State Resistance : R
DS(on)
[mΩ]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
VGS=10V
pulsed
ID=23A
ID=46A
3/6
2011.10 - Rev.A
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