Datasheet R6046ANZ Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

R6046ANZ

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 360

R6046ANZ 

TO-3PF

(1) Gate
(2) Drain
(3) Source

26.5

16.5

14.5

2.0

14.8

15.5

4.5

2.0

0.75

(1) (2) (3)

φ3.6

2.5

5.455.45

0.44

10.0

16.5

5.5

3.0

3.5

2.0

3.0

0.9

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

DSS

GSS

D

DP

S

SP

I

AS

E

AS

D

ch

stg

th (ch-c)

600 V

30 V

*3

46 A

*1

115 A

*3

*1

*2

*2

*4

46 A

115 A

23 A

142 mJ

120 W

150 C

55 to 150 C

1.04 C / W

(1) Gate
(2) Drain
(3) Source 1 BODY DIODE

(1) (3)(2)

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1/5

2011.10 - Rev.A

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Data Sheet

R6046ANZ

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

*

-

*

l19 33 - SVDS=10V, ID=23A

65 81

- 6000 - pF VDS=25V

- 3900 - pF VGS=0V

- 90 - pF f=1MHz

- 60 - ns VDD 300V, ID=23A

*

- 130 - ns VGS=10V

*

- 230 - ns RL=13.0

*

- 100 - ns RG=10

*

- 150 - nC VDD 300V

*

- 35 - nC ID=46A

*

- 55 - nC VGS=10V

*

ID=23A, VGS=10V

m

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=46A, VGS=0V

2/5

2011.10 - Rev.A

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Data Sheet

R6046ANZ

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

6

7

8

9

10

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5.0V

VGS=4.5V

VGS=10.0V

VGS=7.0V

VGS=8.0V

VGS=6.5V

VGS=6.0V

Ta=25°C
pulsed

0

5

10

15

20

25

30

35

40

45

0 1 2 3 4 5 6 7 8 9 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=6.0V

VGS=5.0V

VGS=4.5V

VGS=10.0V

VGS=6.5V

VGS=7.0V

VGS=8.0V

Ta=25°C
pulsed

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

20

40

60

80

100

120

140

160

-50 -25 0 25 50 75 100 125 150

Static Drain-Source On-State Resistance

R

DS(on)

[mW]

Channel Temperature : Tch [℃]

Fig.4 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=46.0A

ID=23.0A

0.001

0.01

0.1

1

10

100

0.0 2.0 4.0 6.0 8.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.5 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : T

ch

[℃]

Fig.6 Gate Threshold Voltage vs. Channel Temperature

VDS=10V

ID=1mA

pulsed

3/5

2011.10 - Rev.A

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Data Sheet

R6046ANZ

0.01

0.1

1

10

100

1000

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

Source Current : I

S

[A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

1000

10000

100000

1000000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.9 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒300V
V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 10 20 30 40 50 60 70 80 90 100110120130140150

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.10 Dynamic Input Characteristics

T

a

=25°C

VDD=300V
I

D

=46A

Pulsed

1

10

100

1000

10000

100000

1000000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.11 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C

f=1MHz
VGS=0V

C

iss

C

oss

C

rss

10

100

1000

0 1 10 100

Reverse Recovery Time : t

rr

[ns]

Source Current : IS [A]

Fig.12 Reverse Recovery Time vs. Source Current

T

a

=25°C

V

gs

=0V

di/dt=100A/us
Pulsed

4/5

2011.10 - Rev.A

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Data Sheet

R6046ANZ

F

it

%

V
V

Fig.2-2 Gate Charge Waveform

V

F

S

 Measurement circuits

VGS

RG

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

RL

VDD

D

I

R

L

V

DD

VDS

Pulse width

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

5/5

2011.10 - Rev.A

Notes

Notice

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