ROHM R6020ANZ Technical data

Data Sheet

10V Drive Nch MOSFET

R6020ANZ

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 360

R6020ANZ 

TO-3PF

(1) Gate
(2) Drain
(3) Source

26.5

16.5

14.5

2.0

14.8

15.5

4.5

2.0

0.75

(1) (2) (3)

φ3.6

2.5

5.455.45

0.44

10.0

16.5

5.5

3.0

3.5

2.0

3.0

0.9

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

* TC=25°C

DSS

GSS

D

DP

S

SP

I

AS

E

AS

D

ch

stg

th (ch-c)

600 V

30 V

*3

*1

*3

*1

*2

*2

*4

20 A

80 A

20 A

80 A

10 A

26.7 mJ

120 W

150 C

55 to 150 C

*

1.04 C / W

(1) Gate
(2) Drain
(3) Source

(1) (3)(2)

1 BODY DIODE

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1/5

2011.10 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6020ANZ

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.95 - 4.15 V VDS=10V, ID=1mA

*

- 0.17 0.22

*

l7 - - SVDS=10V, ID=10A

- 2040 - pF VDS=25V

- 1660 - pF VGS=0V

- 70 - pF f=1MHz

- 40 - ns VDD 300V, ID=10A

*

- 60 - ns VGS=10V

*

- 230 - ns RL=30

*

- 70 - ns RG=10

*

- 65 - nC VDD 300V

*

- 10 - nC ID=20A

*

- 25 - nC VGS=10V

*

ID=10A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=20A, VGS=0V

2/5

2011.10 - Rev.A