Datasheet R6020ANZ Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

R6020ANZ

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 360

R6020ANZ 

TO-3PF

(1) Gate
(2) Drain
(3) Source

26.5

16.5

14.5

2.0

14.8

15.5

4.5

2.0

0.75

(1) (2) (3)

φ3.6

2.5

5.455.45

0.44

10.0

16.5

5.5

3.0

3.5

2.0

3.0

0.9

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

* TC=25°C

DSS

GSS

D

DP

S

SP

I

AS

E

AS

D

ch

stg

th (ch-c)

600 V

30 V

*3

*1

*3

*1

*2

*2

*4

20 A

80 A

20 A

80 A

10 A

26.7 mJ

120 W

150 C

55 to 150 C

*

1.04 C / W

(1) Gate
(2) Drain
(3) Source

(1) (3)(2)

1 BODY DIODE

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1/5

2011.10 - Rev.A

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Data Sheet

R6020ANZ

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.95 - 4.15 V VDS=10V, ID=1mA

*

- 0.17 0.22

*

l7 - - SVDS=10V, ID=10A

- 2040 - pF VDS=25V

- 1660 - pF VGS=0V

- 70 - pF f=1MHz

- 40 - ns VDD 300V, ID=10A

*

- 60 - ns VGS=10V

*

- 230 - ns RL=30

*

- 70 - ns RG=10

*

- 65 - nC VDD 300V

*

- 10 - nC ID=20A

*

- 25 - nC VGS=10V

*

ID=10A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=20A, VGS=0V

2/5

2011.10 - Rev.A

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Data Sheet

R6020ANZ

Electrical characteristic curves

0.01

0.1

1

10

100

0.1 1 10 100 1000

PW = 10ms

Ta = 25°

C

Single Pulse

PW=100us

PW=1ms

Operation in this
area is limited
by R

DS(ON)

0

0.1

0.2

0.3

0.4

0.5

-50 0 50 100 150

V

GS

= 10V

Pulsed

ID= 10A

ID= 20A

0

5

10

15

20

0 1 2 3 4 5
Ta= 25°C
Pulsed

VGS= 4.5V

VGS=5.0V

VGS=5.5V

VGS=6.0V

VGS=6.5V

VGS=7.0V

VGS=8.0V

VGS=10V

0

5

10

15

20

25

30

35

40

0 10 20 30 40 50
Ta= 25°C
Pulsed

VGS=10V

VGS=5.0V

VGS= 4.5V

VGS=6.0V

VGS=7.0V

VGS=6.5V

VGS=5.5V

VGS=8.0V

Fig.2: Typical output characteristics(Ⅰ)

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7

V

DS

= 10

V

Pulsed

Ta=125℃

Ta= 75℃
Ta= 25℃

Ta= -25℃

Fig.4 Typical Transfer Characteristics

0.01

0.1

1

10

0.001 0.1 10

V

GS

= 10V

Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current

0

0.1

0.2

0.3

0.4

0.5

0 5 10 15
Ta=25°C
Pulsed

ID=10A

ID=20A

Fig.7 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

0.001

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

V

DS

= 10

V

Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.9 Forward Transfer Admittance

vs. Drain Current

Fig.3: Typical output characteristics(Ⅱ)

Fig.8 Static Drain-Source On-State

Resistance vs. Channel Temperature

Fig.5 Gate Threshold Voltage

vs. Channel Temperature

0

1

2

3

4

5

6

-50 0 50 100 150

V

DS

= 10V

ID= 1mA

DRAIN-SOURCE VOLTAGE : VDS ( V )

DRAIN CURRENT : I

D

(A)

DRAIN-SOURCE VOLTAGE: VDS (V)

DRAIN CURRENT: I

D

(A)

DRAIN-SOURCE VOLTAGE: VDS (V)

DRAIN CURRENT: I

D

(A)

DRAIN CURRENT : ID (A)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

CHANNEL TEMPERATURE: Tch (°C)

GATE THRESHOLD VOLTAGE: V

GS(th)

(V)

GATE-SOURCE VOLTAGE : VGS (V)

DRAIN CURRENT : I

D

(A)

GATE-SOURCE VOLTAGE : VGS (V)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

CHANNEL TEMPERATURE: Tch (°C)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

DRAIN CURRENT : ID (A)

FORWARD TRANSFER ADMITTANCE :

|Yfs| (S)

Fig.1 Maximum Safe Operating Aera

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Data Sheet

R6020ANZ

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）

Rth（ch-a） = 27.3 °C/W

10

100

1000

0.1 1 10 100

Ta=

25°C

di / dt=

100A / μ

s

V

GS

= 0V

Pulsed

Fig.13 Reverse Recovery Time

vs.Reverse Drain Current

0.01

0.1

1

10

100

0 0.5 1 1.5

V

GS

= 0V

Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.10 Reverse Drain Current vs.

Sourse-Drain Voltage

0

5

10

0 10 20 30 40 50 60 70

Ta= 25°

C

V

DD

= 300V

I

D

= 20A

R

G

= 10Ω

Pulsed

Fig.12 Dynamic Input Characteristics

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

C

iss

C

oss

C

rss

Ta= 25°C
f=

1MHz

VGS= 0V

Fig.11 Typical Capacitance vs.

Drain-Source Voltage

1

10

100

1000

10000

0.01 0.1 1 10 100

t

r

t

f

t

d(on)

t

d(off)

Ta= 25°

C

V

DD

= 300V

V

GS

= 10V

R

G

= 10Ω

Pulsed

Fig.14 Switching Characteristics

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

TOTAL GATE CHARGE : Qg (nC)

GATE-SOURCE VOLTAGE : V

GS

(V)

DRAIN-SOURCE VOLTAGE : VDS (V)

CAPACITANCE : C (pF)

SOURCE-DRAIN VOLTAGE : VSD (V)

SOURCE CURRENT : I

S

(A)

REVERSE DRAIN CURRENT : IDR (A)

REVERSE RECOVERY TIME: t

rr

(ns)

DRAIN CURRENT : ID (A)

SWITCHING TIME : t (ns)

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

4/5

2011.10 - Rev.A

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Data Sheet

R6020ANZ

F

it

%

V
V

Fig.2-2 Gate Charge Waveform

V

F

S

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

R

L

V

DD

D

I

R

L

V

DD

Pulse width

V

DS

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

5/5

2011.10 - Rev.A

Notes

Notice

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