Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
R6008FNX
Nch 600V 8A Power MOSFET
T
j
°C
mJ
E
AR
*4
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
4
EAS
*3
3.4
mJ
P
D
50
4.3
I
D,pulse
*2
I
D
*1
3.9
AAV
30
V/ns
150
Reverse diode dv/dt
I
AR
*3
Range of storage temperature
T
stg
Power dissipation (Tc = 25°C)
°C
W
Junction temperature
A
dv/dt
*5
15
-55 to +150
Unit
600
V
DSS
I
D
*1
A8Value
Symbol
V
V
GSS
32
Continuous drain current
Basic ordering unit (pcs)
Pulsed drain current
Gate - Source voltage
Parameter
Type
Packaging
Tc = 25°C
Taping code
l
Absolute maximum ratings(T
a
= 25°C)
Marking
Tc = 100°C
Drain - Source voltage
l
Features
600V
0.95W
50W
8A
5) Parallel use is easy.
V
DSS
Switching Power Supply
R
DS(on)
(Max.)
IDP
D
1) Low on-resistance.
6) Pb-free lead plating ; RoHS compliant
l
Outline
l
Inner circuit
l
Packaging specifications
TO-220FM
2) Fast switching speed.
Tape width (mm)
-
3) Gate-source voltage (V
GSS
) guaranteed to be 30V.
l
Application
Reel size (mm)
Bulk-500
-
R6008FNX
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(1)
(2)
(3)
1/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
W
Gate input resistance
R
G
f = 1MHz, open drain
-
8.0
-
Static drain - source
on - state resistance
R
DS(on)
*6
W
Tj = 25C
-
0.73
0.95
Tj = 125°C
-
1.62
-
V
GS
= 10V, ID = 4A
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 1mA
2
Gate - Source leakage current
V
GS
= 30V, V
DS
= 0V
-
700
T
j
= 25°C
Drain - Source avalanche
breakdown voltage
-
600
-
I
DSS
I
GSS
-
V
(BR)DS
-
100
--41-
V
Symbol
-
Unit
°C/W
-
2.5
-
-
Conditions
Values--70°C-Min.
Min.
nA
V/ns
Tj = 125°C
Tj = 125°C
50
V
R
thJC
265
100
10
Parameter
Zero gate voltage
drain current
V
(BR)DSS
V
GS
= 0V, ID = 8A
V
GS
= 0V, ID = 1mA
Values
Parameter
Drain - Source breakdown
voltage
V
DS
= 600V, V
GS
= 0V
Conditions
mA
mA
lAbsolute maximum ratings
lThermal resistance
Thermal resistance, junction - case
Parameter
Max.
V
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
lElectrical characteristics(T
a
= 25°C)
Drain - Source voltage slope
dv/dt
VDS = 480V, ID = 8A
-
Typ.
Values
Typ.
°C/W
Unit
Max.
Unit
T
soldRthJA
Symbol
Symbol
2/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 L ⋍ 500mH, V
DD
= 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, V
DD
= 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
Max.
Reverse transfer capacitance
lElectrical characteristics(T
a
= 25C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
5
Transconductance
Input capacitance
2.5
Output capacitance
C
oss
V
DS
= 25V
--S
C
iss
V
GS
= 0V
-
580
-
g
fs
*6
V
DS
= 10V, ID = 4A
pF
-
pF
-
31.5
-
-
31.8
-
C
rss
f = 1MHz
-25-
450
Turn - on delay time
t
d(on)
*6
V
DD
⋍ 300V, V
GS
= 10V
-
Effective output capacitance,
energy related
Effective output capacitance,
time related
C
o(er)
C
o(tr)
V
GS
= 0V
V
DS
= 0V to 480V
ns
60
1203060-20
-
RG = 10W
-
RL = 75W
-
-
lGate Charge characteristics(T
a
= 25C)
Rise time
t
r
*6
ID = 4A
Symbol
Values
25
Typ.
Turn - off delay time
t
d(off)
*6
Fall time
t
f
*6
Total gate charge
Gate - Source charge
Q
gs
*6
ID = 8A
Q
g
*6
V
DD
⋍ 300V
VGS = 10V
Unit
-5-
Min.
nC
20
-
Conditions
10--
Max.
Parameter
5.7-V
Gate plateau voltage
V
(plateau)
V
DD
⋍ 300V, ID = 8A
-
-
Gate - Drain charge
Q
gd
*6
3/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
-
A
A
A
1.5
V
ns
32
8
87
R
th1
Peak rate of fall of reverse
recovery current
dirr/dt
Symbol
Value
lTypical Transient Thermal Characteristics
610
Symbol
Value
Unit
Unit
R
th3
2.18
C
th3
0.046
A/ms
-
Tj = 25°C
0.00166
K/W
Ws/K
R
th2
0.977
C
th2
0.0191
0.263
C
th1
-
Q
rr
*6
I
rrm
*6
IS *1ISM
*2
47
lBody diode electrical characteristics (Source-Drain)(T
a
= 25C)
-
0.17
-
mC
V
SD
*6
V
GS
= 0V, IS = 8A
Typ.
Forward voltage
Reverse recovery time
Tc = 25°C
IS = 8A
di/dt = 100A/us
67
---
Unit
Min.
Max.
Peak reverse recovery current
Parameter
Symbol
Conditions
Values
Reverse recovery charge
t
rr
*6
-
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
-
4.9
-
4/13
2012.10 - Rev.B
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Data Sheet
R6008FNX
lElectrical characteristic curves
0
20
40
60
80
100
120
0 50 100 150 200
0.0001
0.001
0.01
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
= 25ºC
Single Pulse
R
th(ch-a)(t)
= ｒ
(t)×Rth(ch-a)
R
th(ch-a)
= 70ºC/W
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.1
1
10
100
0.1 1 10 100 1000
Operation in this
area is limited
by R
DS(ON)
T
a
= 25ºC
Single Pulse
P
W
= 100us
P
W
= 1ms
PW = 10ms
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
5/13
2012.10 - Rev.B
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Data Sheet
R6008FNX
lElectrical characteristic curves
0
1
2
3
4
5
6
0.01 0.1 1 10 100
Ta = 25ºC
V
DD
= 50V , RG = 25W
V
GF
= 10V , V
GR
= 0V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
1.0E+04 1.0E+05 1.0E+06
Ta = 25ºC
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Fig.4 Avalanche Current vs Inductive Load
Avalanche Current : I
AR
[A]
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
Avalanche Power Losses : P
AR
[W]
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : E
AS
/ E
AS
max. [%]
Junction Temperature : Tj [ºC]
6/13
2012.10 - Rev.B
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Data Sheet
R6008FNX
lElectrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.8 Typical Output Characteristics(II)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Drain - Source Voltage : VDS [V]
Drain Current : I
D
[A]
0
1
2
3
4
5
6
7
8
0 10 20 30 40 50
Ta= 25ºC
Pulsed
5.0V
VGS= 4.5V
6.0V
10V
5.5V
0
1
2
3
4
5
6
7
8
0 1 2 3 4 5
Ta= 25ºC
Pulsed
VGS= 4.5V
5.0V
6.0V
5.5V
6.5V
7.0V
8.0V
10V
0
1
2
3
4
5
6
7
8
0 10 20 30 40 50
Ta = 150ºC
Pulsed
10V
5.0V
6.0V
5.5V
V
GS
= 4.5V
0
1
2
3
4
5
0 1 2 3 4 5
Ta = 150ºC
Pulsed
V
GS
= 4.5V
10V
5.0V
6.0V
7/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
lElectrical characteristic curves
0.001
0.01
0.1
1
10
100
0.0 1.5 3.0 4.5 6.0
V
DS
= 10V
Pulsed
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
= 10V
Pulsed
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0
1
2
3
4
5
6
-50 0 50 100 150
V
DS
= 10V
ID = 1mA
Fig.11 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.12 Typical Transfer Characteristics
Drain Current : I
D
[A]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.14 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : ID [A]
500
550
600
650
700
750
800
850
900
-50 0 50 100 150
8/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
lElectrical characteristic curves
0.1
1
10
0.1 1 10
V
GS
= 10V
Pulsed
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
0.5
1
1.5
2
0 5 10 15
ID= 4.0A
ID= 8.0A
Ta = 25ºC
Pulsed
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[W]
Gate - Source Voltage : VGS [V]
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[W]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
Static Drain - Source On-State Resistance
: R
DS(on)
[W]
Drain Current : ID [A]
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
VGS= 10V
Pulsed
ID= 4.0A
ID= 8.0A
9/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
lElectrical characteristic curves
0
2
4
6
0 200 400 600
Ta = 25ºC
0
5
10
15
0 10 20 30
Ta = 25ºC
V
DD
= 300V
ID = 8.0A
RG = 10W
Pulsed
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
C
iss
C
oss
C
rss
Ta = 25ºC
f = 1MHz
V
GS
= 0V
1
10
100
1000
10000
0.1 1 10 100
t
r
t
d(on)
t
d(off)
t
f
Ta = 25ºC
V
DD
= 300V
V
GS
= 10V
RG = 10W
Pulsed
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.19 Coss Stored Energy
Coss Stored Energy : E
OSS
[uJ]
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.21 Dynamic Input Characteristics
Gate - Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
10/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Inverse Diode Forward Current : I
S
[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
Reverse Recovery Time : t
rr
[ns]
Inverse Diode Forward Current : IS [A]
10
100
1000
0.1 1 10 100
Ta = 25ºC
di / dt = 100A / ms
V
GS
= 0V
Pulsed
0.01
0.1
1
10
100
0 0.5 1 1.5 2
V
GS
= 0V
Pulsed
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
11/13
2012.10 - Rev.B
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Data Sheet
R6008FNX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
12/13
2012.10 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6008FNX
lDimensions (Unit : mm)
Dimension in mm/inches
D
b1
E1
E
e
b
c
F
A2A1
AL
x A
A4
φ
p
Q
A
TO-220FM
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.39 0.406
E 4.40 4.80 0.173 0.189
e
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015
2.54
0.10
DIM
MILIMETERS
INCHES
13/13
2012.10 - Rev.B
Notes
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The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
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Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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R1120A
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