ROHM R6008FNX Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

R6008FNX

Nch 600V 8A Power MOSFET

T

j

°C

mJ

E

AR

*4

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current

4

EAS

*3

3.4

mJ

P

D

50

4.3

I

D,pulse

*2

I

D

*1

3.9

AAV

30

V/ns

150

Reverse diode dv/dt

I

AR

*3

Range of storage temperature

T

stg

Power dissipation (Tc = 25°C)

°C

W

Junction temperature

A

dv/dt

*5

15

-55 to +150

Unit

600

V

DSS

I

D

*1

A8Value

Symbol

V

V

GSS

32

Continuous drain current
Basic ordering unit (pcs)

Pulsed drain current

Gate - Source voltage

Parameter

Type

Packaging

Tc = 25°C

Taping code

l

Absolute maximum ratings(T

a

= 25°C)

Marking

Tc = 100°C

Drain - Source voltage

l

Features

600V

0.95W

50W

8A

5) Parallel use is easy.

V

DSS

Switching Power Supply

R

DS(on)

(Max.)

IDP

D

1) Low on-resistance.

6) Pb-free lead plating ; RoHS compliant

l

Outline

l

Inner circuit

l

Packaging specifications

TO-220FM

2) Fast switching speed.

Tape width (mm)

-

3) Gate-source voltage (V

GSS

) guaranteed to be 30V.

l

Application

Reel size (mm)

Bulk-500

-

R6008FNX

4) Drive circuits can be simple.

(1) Gate
(2) Drain
(3) Source

*1 Body Diode

(1)

(2)

(3)

1/13

2012.10 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6008FNX

W

Gate input resistance

R

G

f = 1MHz, open drain

-

8.0

-

Static drain - source
on - state resistance

R

DS(on)

*6

W

Tj = 25C

-

0.73

0.95

Tj = 125°C

-

1.62

-

V

GS

= 10V, ID = 4A

Gate threshold voltage

V

GS (th)

V

DS

= 10V, ID = 1mA

2

Gate - Source leakage current

V

GS

= 30V, V

DS

= 0V

-

700

T

j

= 25°C

Drain - Source avalanche
breakdown voltage

-

600

-

I

DSS

I

GSS

-

V

(BR)DS

-

100

--41-

V

Symbol

-

Unit

°C/W

-

2.5

-

-

Conditions

Values--70°C-Min.

Min.

nA

V/ns

Tj = 125°C

Tj = 125°C

50

V

R

thJC

265

100

10

Parameter

Zero gate voltage
drain current

V

(BR)DSS

V

GS

= 0V, ID = 8A

V

GS

= 0V, ID = 1mA

Values

Parameter

Drain - Source breakdown
voltage

V

DS

= 600V, V

GS

= 0V

Conditions

mA

mA

lAbsolute maximum ratings

lThermal resistance

Thermal resistance, junction - case

Parameter

Max.

V

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

lElectrical characteristics(T

a

= 25°C)

Drain - Source voltage slope

dv/dt

VDS = 480V, ID = 8A

-

Typ.

Values

Typ.

°C/W

Unit

Max.

Unit

T

soldRthJA

Symbol
Symbol

2/13

2012.10 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6008FNX

*1 Limited only by maximum temperature allowed.

*2 PW  10ms, Duty cycle  1%

*3 L ⋍ 500mH, V

DD

= 50V, RG = 25W, starting Tj = 25°C

*4 L ⋍ 500mH, V

DD

= 50V, RG = 25W, starting Tj = 25°C, f = 10kHz

*5 Reference measurement circuits Fig.5-1.

*6 Pulsed

Max.

Reverse transfer capacitance

lElectrical characteristics(T

a

= 25C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

5

Transconductance

Input capacitance

2.5

Output capacitance

C

oss

V

DS

= 25V

--S

C

iss

V

GS

= 0V

-

580

-

g

fs

*6

V

DS

= 10V, ID = 4A

pF

-

pF

-

31.5

-

-

31.8

-

C

rss

f = 1MHz

-25-

450

Turn - on delay time

t

d(on)

*6

V

DD

⋍ 300V, V

GS

= 10V

-

Effective output capacitance,
energy related

Effective output capacitance,
time related

C

o(er)

C

o(tr)

V

GS

= 0V

V

DS

= 0V to 480V

ns

60

1203060-20

-

RG = 10W

-

RL = 75W

-

-

lGate Charge characteristics(T

a

= 25C)

Rise time

t

r

*6

ID = 4A

Symbol

Values

25

Typ.

Turn - off delay time

t

d(off)

*6

Fall time

t

f

*6

Total gate charge

Gate - Source charge

Q

gs

*6

ID = 8A

Q

g

*6

V

DD

⋍ 300V

VGS = 10V

Unit

-5-

Min.

nC

20

-

Conditions

10--

Max.

Parameter

5.7-V

Gate plateau voltage

V

(plateau)

V

DD

⋍ 300V, ID = 8A

-

-

Gate - Drain charge

Q

gd

*6

3/13

2012.10 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6008FNX

-

A

A

A

1.5

V

ns

32

8

87

R

th1

Peak rate of fall of reverse
recovery current

dirr/dt

Symbol

Value

lTypical Transient Thermal Characteristics

610

Symbol

Value

Unit

Unit

­R

th3

2.18

C

th3

0.046

A/ms

-

Tj = 25°C

0.00166

K/W

Ws/K

R

th2

0.977

C

th2

0.0191

0.263

C

th1

-

Q

rr

*6

I

rrm

*6

IS *1ISM

*2

47

lBody diode electrical characteristics (Source-Drain)(T

a

= 25C)

-

0.17

-

mC

V

SD

*6

V

GS

= 0V, IS = 8A

Typ.

Forward voltage

Reverse recovery time

Tc = 25°C
IS = 8A

di/dt = 100A/us

67

---

Unit

Min.

Max.

Peak reverse recovery current

Parameter

Symbol

Conditions

Values

Reverse recovery charge

t

rr

*6

-

Inverse diode continuous,
forward current

Inverse diode direct current,
pulsed

-

4.9

-

4/13

2012.10 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6008FNX

lElectrical characteristic curves

0

20

40

60

80

100

120

0 50 100 150 200

0.0001

0.001

0.01

0.1

1

10

100

1000

0.0001 0.01 1 100

T

a

= 25ºC

Single Pulse
R

th(ch-a)(t)

= ｒ

(t)×Rth(ch-a)

R

th(ch-a)

= 70ºC/W

top D = 1

D = 0.5
D = 0.1
D = 0.05
D = 0.01

D = Single

0.01

0.1

1

10

100

0.1 1 10 100 1000

Operation in this
area is limited
by R

DS(ON)

T

a

= 25ºC

Single Pulse

P

W

= 100us

P

W

= 1ms

PW = 10ms

Fig.1 Power Dissipation Derating Curve

Power Dissipation : P

D

/P

D

max. [%]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Drain Current : I

D

[A]

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

Normalized Transient Thermal Resistance : r

(t)

Pulse Width : PW [s]

5/13

2012.10 - Rev.B