ROHM R6008FNJ Technical data

Data Sheet

10V Drive Nch MOSFET

R6008FNJ

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1) Fast reverse recovery time (t

2) Low on-resistance.

)

rr

9.0

13.1

1.0

3.0

3) Fast switching speed.

4) Gate-source voltage
　 V

garanteed to be ±30V .

GSS

5) Drive circuits can be simple.

6) Parallel use is easy.

Application  Inner circuit

Switching

Packaging specifications

Package Taping

Type

R6008FNJ 

Code

TL

Basic ordering unit (pieces) 1000

(1) Gate
(2) Drain
(3) Source

Absolute maximum ratings (Ta  25°C)

Parameter

Drain-source voltage V
Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

Avalanche Current I

Avalanche Energy E

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

AS

AS

*3

*1

*3

*1

*2

*2

600 V

30 V

8A

32 A

8A

32 A

4A

4.3 mJ

Power dissipation (Tc=25℃)PD50 W

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L≒500H, V

*3 Limited only by maximum temperature allowed.

=50V, Rg=25, starting Tch=25℃

DD

ch

stg

150 C

55 to 150 C

1.24

2.54

5.08

(1) (2) (3)

(1) (3)(2)

0.4

0.78

2.7

1 BODY DIODE

1.2

∗1

 Thermal resistance

Parameter

Channel to Case R

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Symbol Limits Unit

th (ch-c)

2.5 C / W

1/5

2011.10 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6008FNJ

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=±30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.0 - 4.0 V VDS=10V, ID=1mA

- 0.73 0.95

*

*

l 2.5 5.0 - S ID=4A, VDS=10V

- 580 - pF VDS=25V

- 450 - pF VGS=0V

- 25 - pF f=1MHz

- 20 - ns ID=4A, VDD 300V

*

- 25 - ns VGS=10V

*

- 60 - ns RL=75

*

- 30 - ns RG=10

*

- 20 - nC ID=8A,

*

-5-nCV

*

- 10 - nC VGS=10V

*

ID=4A, VGS=10V



300V

DD

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

Reverse Recovery Time t

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

rr

- - 1.5 V Is=8A, VGS=0V

-67-ns

Conditions

=8A, di/dt=100A/s

I

s

2/5

2011.10 - Rev.A