ROHM R6006ANX Technical data
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
R6006ANX
Nch 600V 6A Power MOSFET
mJ
Junction temperature
30
E
AR
*4
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
3A1.9
EAS
*3
mJ
V
Gate - Source voltage
P
D
40
I
D,pulse
*2
I
D
*1
2.9
AAV/ns
150
Reverse diode dv/dt
I
AR
*3
Range of storage temperature
T
stg
Power dissipation (Tc = 25C)
CWC
dv/dt
*5
15
-55 to +150
T
j
500
Symbol
Taping code
lAbsolute maximum ratings (Ta = 25C)
-
Marking
R6006ANX
Parameter
Tape width (mm)
-
lApplication
Bulk
-
Type
Packing
6
Reel size (mm)
Value
V
Unit
600
V
DSS
I
D
*1
A
Tc = 25C
Drain - Source voltage
lFeatures
V
DSS
2.4
V
GSS
24
Continuous drain current
Basic ordering unit (pcs)
Pulsed drain current
40W
6A
5) Parallel use is easy.
Tc = 100C
Switching Power Supply
4) Drive circuits can be simple.
2) Fast switching speed.
lOutline
lInner circuit
lPackaging specifications
TO-220FM
600V
1.2W
R
DS(on)
(Max.)
IDP
D
1) Low on-resistance.
6) Pb-free lead plating ; RoHS compliant
3) Gate-source voltage (V
GSS
) guaranteed to be 30V.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(1)
(2)
(3)
1/13
2012.01 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6006ANX
W
Gate input resistance
R
G
f = 1MHz, open drain
-
7.6
-
Static drain - source
on - state resistance
W
Tj = 25C
-
0.9
1.2
Tj = 125°C
-
R
DS(on)
*6
V
GS
= 10V, ID = 3A
1.9
-
Unit
Max.
-
700
-
-
70
Gate threshold voltage
V
GS (th)
V
DS
= 10V, ID = 1mA
2.5
Gate - Source leakage current
V
GS
= 30V, V
DS
= 0V
--V
4.5
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
lElectrical characteristics (Ta = 25C)
Parameter
Drain - Source breakdown
voltage
V
DS
= 600V, V
GS
= 0V
Unit
T
soldRthJA
Min.
R
thJC
Symbol
-
Unit
C/W
Values
V/ns
Tj = 125C
50
-
3.125
-
C
-
265
C/W
Drain - Source avalanche
breakdown voltage
-
600
Conditions
Symbol
V
(BR)DS
-
Min.
Values
Typ.
100
-
Zero gate voltage
drain current
V
(BR)DSS
V
GS
= 0V, ID = 6A
V
GS
= 0V, ID = 1mA
I
DSS
I
GSS
-
nA
Tj = 125°C
V
V
0.1mA1000
100
-
-
T
j
= 25C
Drain - Source voltage slope
dv/dt
VDS = 480V, ID = 6A
-
Typ.
Symbol
Conditions
Values
lAbsolute maximum ratings
lThermal resistance
Thermal resistance, junction - case
Parameter
Max.
Parameter
2/13
2012.01 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6006ANX
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 L ⋍ 500mH, V
DD
= 50V, RG = 25W, starting Tj = 25C
*4 L ⋍ 500mH, V
DD
= 50V, RG = 25W, starting Tj = 25C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
Max.
Reverse transfer capacitance
lElectrical characteristics (Ta = 25C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
3.5
Transconductance
Input capacitance
1.7
Output capacitance
C
oss
V
DS
= 25V
--S
C
iss
V
GS
= 0V
-
520
-
g
fs
*6
V
DS
= 10V, ID = 3.0A
pF
-
C
rss
f = 1MHz
-25-
380
pF
-25-
-
25
Turn - on delay time
t
d(on)
*6
V
DD
⋍ 300V, V
GS
= 10V
-
Effective output capacitance,
energy related
Effective output capacitance,
time related
C
o(er)
C
o(tr)
V
GS
= 0V
V
DS
= 0V to 480V
22
RG = 10W
-
Turn - off delay time
t
d(off)
*6
RL = 100W
-
Fall time
t
f
*6
-
-
Typ.ns50
1003570--
Max.
Unit
nC
-
Parameter
lGate Charge characteristics (Ta = 25C)
Rise time
t
r
*6
ID = 3A
Symbol
Values
18
VGS = 10V
-4-
Min.15-
Conditions
Total gate charge
Gate - Source charge
Q
gs
*6
ID = 6A
Q
g
*6
V
DD
⋍ 300V
6-6.0-V
Gate plateau voltage
V
(plateau)
V
DD
⋍ 300V, ID = 6A
-
-
Gate - Drain charge
Q
gd
*6
3/13
2012.01 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6006ANX
Unit
-AA
1.5
V
ns
24
6
Peak rate of fall of reverse
recovery current
dirr/dt
-
Value
lTypical Transient Thermal Characteristics
300
-
Symbol
Value
Unit
Symbol
-
A
A/ms
-
Tj = 25C
0.00138
K/W
Ws/K
R
th2
1.15
C
th2
0.0146
0.342
C
th1Rth1Rth3
2.19
C
th3
0.452
IS = 6A
di/dt = 100A/ms
302
---
lBody diode electrical characteristics (Source-Drain) (Ta = 25C)
-
2.0
-
mC
V
SD
*6
V
GS
= 0V, IS = 6A
Typ.
Forward voltage
Reverse recovery time
Unit
Min.
Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
-
Peak reverse recovery current
Parameter
Symbol
Conditions
Values
Reverse recovery charge
t
rr
*6
-
-13-
Q
rr
*6
I
rrm
*6
IS *1ISM
*2
Tc = 25C
4/13
2012.01 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6006ANX
lElectrical characteristic curves
0
20
40
60
80
100
120
0 50 100 150 200
0.0001
0.001
0.01
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
= 25ºC
Single Pulse
R
th(ch-a)(t)
= r
(t)
×Rth(ch-
a)
Rth(ch-a) = 70ºC/W
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : I
D
[A]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
0.01
0.1
1
10
100
0.1 1 10 100 1000
T
a
= 25ºC
Single Pulse
Operation in this
area is limited
by R
DS(ON)
PW = 100us
PW = 1ms
PW = 10ms
5/13
2012.01 - Rev.B
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