ROHM R6004CND Technical data
Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Application
Switching
CPT3
(SC-63)
<SOT-428>
(1) Gate
(2) Drain
(3) Source
0.75
6.5
5.1
0.9
0.65
2.30.9
(1)
(3)
(2)
2.3
0.5
1.5
5.5
2.3
1.5
0.8Min.
0.5
1.0
9.5
2.5
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 2500
R6004CND
(1) Gate
(2) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.
=25C
*4 T
C
=50V, RG=25, Tch=25C
DD
E
DSS
GSS
*3
D
*1
DP
S
*1
SP
*2
I
AS
*2
AS
*4
D
ch
55 to 150 C
stg
600 V
25 V
4A
16 A
4A
16 A
2A
1.1 mJ
40 W
150 C
(3) Source
∗1
∗2
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case R
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Symbol Limits Unit
th (ch-c)
3.13 C / W
1/5
2011.10 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6004CND
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=25V, VDS=0V
600 - - V ID=1mA, VGS=0V
- - 100 AVDS=600V, VGS=0V
2.5 - 4.5 V VDS=10V, ID=1mA
*
- 1.4 1.8
*
l 1.2 - - S VDS=10V, ID=2A
- 280 - pF VDS=25V
- 222 - pF VGS=0V
- 15 - pF f=1MHz
- 23 - ns VDD 300V, ID=2A
*
- 28 - ns VGS=10V
*
- 44 - ns RL=150
*
- 39 - ns RG=10
*
- 11 - nC VDD 300V
*
-3-nCI
*
-5-nCV
*
ID=2A, VGS=10V
=4A
D
=10V
GS
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V IS=4A, VGS=0V
2/5
2011.10 - Rev.A
Loading...