Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Application
Switching
CPT3
(SC-63)
<SOT-428>
(1) Gate
(2) Drain
(3) Source
0.75
6.5
5.1
0.9
0.65
2.30.9
(1)
(3)
(2)
2.3
0.5
1.5
5.5
2.3
1.5
0.8Min.
0.5
1.0
9.5
2.5
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 2500
R6004CND
(1) Gate
(2) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.
=25C
*4 T
C
=50V, RG=25, Tch=25C
DD
E
DSS
GSS
*3
D
*1
DP
S
*1
SP
*2
I
AS
*2
AS
*4
D
ch
55 to 150 C
stg
600 V
25 V
4A
16 A
4A
16 A
2A
1.1 mJ
40 W
150 C
(3) Source
∗1
∗2
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case R
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Symbol Limits Unit
th (ch-c)
3.13 C / W
1/5
2011.10 - Rev.A
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Data Sheet
R6004CND
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=25V, VDS=0V
600 - - V ID=1mA, VGS=0V
- - 100 AVDS=600V, VGS=0V
2.5 - 4.5 V VDS=10V, ID=1mA
*
- 1.4 1.8
*
l 1.2 - - S VDS=10V, ID=2A
- 280 - pF VDS=25V
- 222 - pF VGS=0V
- 15 - pF f=1MHz
- 23 - ns VDD 300V, ID=2A
*
- 28 - ns VGS=10V
*
- 44 - ns RL=150
*
- 39 - ns RG=10
*
- 11 - nC VDD 300V
*
-3-nCI
*
-5-nCV
*
ID=2A, VGS=10V
=4A
D
=10V
GS
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V IS=4A, VGS=0V
2/5
2011.10 - Rev.A
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Data Sheet
R6004CND
Electrical characteristic curves
0.01
0.1
1
10
0.0 0.5 1.0 1.5
VGS= 0V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0
1
2
3
4
5
-50 0 50 100 150
V
GS
= 10V
Pulsed
ID= 2.0A
ID= 4.0A
0
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=10.0V
VGS=6.0V
VGS=7.0V
VGS=5.0V
VGS=4.5V
VGS=8.0V
VGS=6.5V
Ta=25℃
pulsed
0
1
2
3
4
0 1 2 3 4 5 6 7 8 9 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=5.0V
VGS=6.0V
VGS=4.5V
VGS=7.0V
VGS=8.0V
VGS=6.5V
Ta=25℃
pulsed
0.001
0.01
0.1
1
10
100
0 2 4 6 8 10
VDS= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Fig.3 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : I
D
(A)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
0
1
2
3
4
5
6
-50 0 50 100 150
VDS= 10V
ID= 1mA
CHANNEL TEMPERATURE: Tch (℃)
GATE THRESHOLD VOLTAGE: V
GS(th)
(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
0
0.5
1
1.5
2
2.5
3
3.5
4
0 5 10 15
ID= 2.0A
ID= 4.0A
Ta=25℃
pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Gate Source
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
CHANNEL TEMPERATURE: Tch (℃)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10
V
DS
= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : ID (A)
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
Fig.9 Source Current vs.
Sourse-Drain Voltage
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE CURRENT : I
S
(A)
0.01
0.1
1
10
100
0.1 1 10
VGS= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
3/5
2011.10 - Rev.A
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Data Sheet
R6004CND
1
10
100
1000
10000
0.01 0.1 1 10
t
r
t
f
t
d(on)
t
d(off)
Ta= 25℃
VDD= 300V
VGS= 10V
RG= 10Ω
Pulsed
10
100
1000
10000
0 1 10
Ta= 25℃
di / dt= 100A / μs
VGS= 0V
Pulsed
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
C
iss
C
oss
C
rss
Ta= 25℃
f= 1MHz
VGS= 0V
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS (V)
CAPACITANCE : C (pF)
0
5
10
15
0 5 10 15
T
a
= 25
℃
V
DD
= 300V
I
D
= 4A
R
G
= 10Ω
Pulsed
Fig.11 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.12 Reverse Recovery Time
vs.Source Current
SOURCE CURRENT : IS (A)
REVERSE RECOVERY TIME: t
rr
(ns)
Fig.13 Switching Characteristics
DRAIN CURRENT : ID (A)
SWITCHING TIME : t (ns)
4/5
2011.10 - Rev.A
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Data Sheet
R6004CND
F
it
%
V
V
Fig.2-2 Gate Charge Waveform
V
F
S
Measurement circuits
VGS
RG
ig.1-1 Switching Time Measurement Circu
V
GS
I
G(Const.)
R
G
ig.2-1 Gate Charge Measurement Circuit
D.U.T.
D.U.T.
D
I
RL
VDD
D
I
R
L
V
DD
VDS
V
Pulse width
50%
10%
GS
DS
10% 10%
90%
50%
90% 90
t
d(on)
t
on
t
d(off)
t
r
t
f
t
off
Fig.1-2 Switching Waveforms
V
G
D
GS
QgsQ
Q
g
gd
Charge
V
GS
R
G
D.U.T.
I
AS
L
DD
V
Fig.3-1 Avalanche Measurement Circuit
V
DS
V(BR)DSS
IAS
VDD
EAS =
1
L
2
V(BR)DSS
2
I
AS
V
(BR)DSS
-
VDD
Fig.3-2 Avalanche Waveform
5/5
2011.10 - Rev.A
Notes
Notice
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R1120A
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