ROHM R5205CND Technical data

10V Drive Nch MOSFET

R5205CND

Structure



Silicon N-channel MOSFET

Features



1) Low resistance.

2) High speed switching.

Application



Switching

Dimensions



CPT3

(1)Gate
(2)Drain
(3)Source

(Unit : mm)

6.5

5.1

1.5

5.5

0.75

0.9

Abbreviated symbol : R5205C

0.9

0.65

2.3

(1)

2.3

(3)

(2)

2.3

0.5

1.5

2.5

0.8Min.

0.5

1.0

9.5

Packaging specifications



Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

R5205CND 

Absolute maximum ratings



Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I
Avalanche current I

Avalanche energy

Total power dissipation (Tc=25C) P

Channel temperature Tch 150

(Ta = 25C)

Symbol Limits Unit

E

DSS

GSS

D

DP

S

SP

AS

AS

D

525 V

30 V



*1

*2

*1

*2

*3

*3

5A



20 A



5A

20 A

2.5 A

1.6 mJ

40 W



Range of storage temperature Tstg -55 to +150C

*1 Limited only by maximum temperature allowed.

*2 Pw10s Duty Cycle1%

*3 L 500H, V

=50V, Rg=25 STARTING Tch=25C

DD

Inner circuit



∗2

∗1

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

∗1 Body Diode
∗2 ESD Protection Diode

C

Thermal resistance



Parameter

Channel to case Rth (ch-c) 3.13

* Limited only by maximum temperature allowed.

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2010 ROHM Co., Ltd. All rights reserved.

Symbol Limits Unit

*

C / W



2010.12 - Rev.A

Electrical characteristics



Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward atransfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

(Ta = 25C)

Symbol Min. Typ. Max. Unit

R

Conditions

GSS

(BR)DSS

DSS

GS (th)

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10

525 - - V ID=1mA, VGS=0V

--100AVDS=525V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

*

-1.31.6

*

l 1.5 2.5 - S VDS=10V, ID=2.5A

- 320 - pF VDS=25V

- 180 - pF VGS=0V

- 15 - pF f=1MHz

*

-20-nsV

*

-25-nsV

*

-40-nsR

*

-20-nsR

*

- 10.8 - nC VDD 250V, ID=5A

*

-3.2-nCV

-4.4-nCR

*

AVGS=25V, VDS=0V



ID=2.5A, VGS=10V



250V, ID=2.5A

DD

=10V

GS

=100



L

=10



G

=10V RL=50

GS

=10



G

Data Sheet R5205CND



Body diode characteristics



Parameter Conditions

(Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward voltage V

*Pulsed

SD

*

--1.5VI

=5A, VGS=0V

s

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2010 ROHM Co., Ltd. All rights reserved.

2010.12 - Rev.A