ROHM R5205CND Technical data

10V Drive Nch MOSFET

R5205CND

Structure



Silicon N-channel MOSFET

Features



1) Low resistance.

2) High speed switching.

Application



Switching

Dimensions



CPT3

(1)Gate
(2)Drain
(3)Source

(Unit : mm)

6.5

5.1

1.5

5.5

0.75

0.9

Abbreviated symbol : R5205C

0.9

0.65

2.3

(1)

2.3

(3)

(2)

2.3

0.5

1.5

2.5

0.8Min.

0.5

1.0

9.5

Packaging specifications



Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

R5205CND 

Absolute maximum ratings



Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I
Avalanche current I

Avalanche energy

Total power dissipation (Tc=25C) P

Channel temperature Tch 150

(Ta = 25C)

Symbol Limits Unit

E

DSS

GSS

D

DP

S

SP

AS

AS

D

525 V

30 V



*1

*2

*1

*2

*3

*3

5A



20 A



5A

20 A

2.5 A

1.6 mJ

40 W



Range of storage temperature Tstg -55 to +150C

*1 Limited only by maximum temperature allowed.

*2 Pw10s Duty Cycle1%

*3 L 500H, V

=50V, Rg=25 STARTING Tch=25C

DD

Inner circuit



∗2

∗1

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

∗1 Body Diode
∗2 ESD Protection Diode

C

Thermal resistance



Parameter

Channel to case Rth (ch-c) 3.13

* Limited only by maximum temperature allowed.

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Symbol Limits Unit

*

C / W



2010.12 - Rev.A

Electrical characteristics



Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward atransfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

(Ta = 25C)

Symbol Min. Typ. Max. Unit

R

Conditions

GSS

(BR)DSS

DSS

GS (th)

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10

525 - - V ID=1mA, VGS=0V

--100AVDS=525V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

*

-1.31.6

*

l 1.5 2.5 - S VDS=10V, ID=2.5A

- 320 - pF VDS=25V

- 180 - pF VGS=0V

- 15 - pF f=1MHz

*

-20-nsV

*

-25-nsV

*

-40-nsR

*

-20-nsR

*

- 10.8 - nC VDD 250V, ID=5A

*

-3.2-nCV

-4.4-nCR

*

AVGS=25V, VDS=0V



ID=2.5A, VGS=10V



250V, ID=2.5A

DD

=10V

GS

=100



L

=10



G

=10V RL=50

GS

=10



G

Data Sheet R5205CND



Body diode characteristics



Parameter Conditions

(Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward voltage V

*Pulsed

SD

*

--1.5VI

=5A, VGS=0V

s

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2010.12 - Rev.A

Operation in this
area is limited by
R

DS(ON)

Electrical characteristic curves


100

10

(A)

Operation in this

Operation in this

D

area is limited by

area is limited by
R

R

DS(ON)

DS(ON)

1

0.1

DRAIN CURRENT : I

Tc = 25°C
Single Pulse

0.01

0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS ( V )

Fig.1 Maximum Safe Operating Aera

PW= 100us

PW= 1ms

PW= 10ms

DC operation

10

VDS= 10V
Pulsed

1

(A)

D

0.01

0.1

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

DRAIN CURRENT : I

0.001

01234567

GATE-SOURCE VOLTAGE : VGS (V)

Fig.2 Typical Transfer Characteristics

6

VDS= 10V

(V)

= 1mA

I

D

5

GS(th)

4

3

2

1

0

GATE THRESHOLD VOLTAGE: V

-50 0 50 100 150

CHANNEL TEMPERATURE: Tch (°C)

Fig.3 Gate Threshold Voltage
vs. Channel Temperature

Data Sheet R5205CND

100

(Ω)

10

DS(on)

1

0.1

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0.01

0.01 0.1 1 10

10

1

0.1

0.01

0.001

0.001 0.01 0.1 1 10

FORWARD TRANSFER ADMITTANCE : |Yfs| (S)

VGS= 10V
Pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

DRAIN CURRENT : ID (A)

Fig.4 Static Drain-Source On-State
    Resistance vs. Drain Current

VDS= 10V
Pulsed

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

DRAIN CURRENT : ID (A)

Fig.7 Forward Transfer Admittance
    vs. Drain Current

5

4

(Ω)

DS(on)

3

2

ID= 2.5A

1

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

0 5 10 15

GATE-SOURCE VOLTAGE : VGS (V)

Fig.5 Static Drain-Source On-State
Resistance vs. Gate Source

10

VGS= 0V

(A)

Pulsed

DR

1

0.1

REVERSE DRAIN CURRENT : I

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.8 Reverse Drain Current vs.
Sourse-Drain Voltage

ID= 5.0A

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

Ta=25°C
Pulsed

5

VGS= 10V
Pulsed

4

(Ω)

DS(on)

3

2

1

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

-50 0 50 100 150

ID= 5.0A

CHANNEL TEMPERATURE: Tch (°C)

Fig.6 Static Drain-Source On-State
Resistance vs. Channel

10000

1000

100

C

10

Ta= 25°C

CAPACITANCE : C (pF)

f= 1MHz
V

= 0V

GS

1

0.01 0.1 1 10 100 1000

rss

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.9 Typical Capacitance vs.
Drain-Source Voltage

ID= 2.5A

C

iss

C

oss

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2010.12 - Rev.A

L

Data Sheet R5205CND

15

Ta= 25°C

RESISTANCE : r (t)

(V)

GS

GATE-SOURCE VOLTAGE : V

0.001

= 250V

V

DD

I

= 5A

D

= 10

R

G

10

Pulsed

5

0

0 5 10 15

TOTAL GATE CHARGE : Q

Fig.10 Dynamic Input Characteristics

10

Ta = 25°C
Single Pulse : 1Unit

1

Rth (ch-a) (t) = ｒ(t)×Rth (ch-a)
Rth (ch-a) = 133.2°C/W

0.1

0.01

(nC)

g

1000

(ns)

rr

100

Ta= 25°C
di / dt= 100A / μs
V

REVERSE RECOVERY TIME: t

10

0.1 1 10 100

REVERSE DRAIN CURRENT : IDR (A)

Fig.11 Reverse Recovery Time
vs.Reverse Drain Current

Pulsed

= 0V

GS

10000

t

f

1000

t

d(off)

100

10

SWITCHING TIME : t (ns)

1

0.01 0.1 1 10

t

r

DRAIN CURRENT : ID (A)

Fig.12 Switching  Characteristics

Ta= 25°C
V

DD

V

GS

R
Pulsed

t

d(on)

= 250V
= 10V

= 10

G

0.0001

NORMARIZED TRANSIENT THERMA

0.0001 0.001 0.01 0.1 1 10 100 1000

PULSE WIDTH : Pw(s)

Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width

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2010.12 - Rev.A

F

it

S

%

V
V

F

S

V

Fig.3-1 Avalanche Measurement circuit

S

V

S

Measurement circuits

V

GS

D.U.T.

R

G

Data Sheet R5205CND

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

ig.1-1 Switching time measurement circu

V

I

G(Const.)

GS

R

G

D.U.T.

D

I

V

R

L

V

DD

ig.2-1 Gate charge measurement circuit

V

GS

R

G

D.U.T.

I

AS

V

D

L

V

DD

Fig.1-2 Switching waveforms

V

G

D

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate charge waveform

V

(BR)DS

I

AS

DD

V

1

L

E

AS

=

I

2

(BR)DSS

2

AS

(BR)DSS

- V

V

DD

Fig.3-2 Avalanche waveform

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2010.12 - Rev.A

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