ROHM R5021ANX Technical data

R5021ANX

z

z

z

z

z

z

z

Transistors

10V Drive Nch MOSFET

R5021ANX

Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

GSS)

guaranteed to be r30V.

4) Drive circuits can be simple.

5) Parallel use is easy.

Applications

Switching

Dimensions (Unit : mm)

TO-220FM

15.0

12.0

8.02.5

14.0

(1)Base
(2)Collector
(3)Emitter

φ3.2

10.0

1.3

1.2

0.8

2.54 2.62.54

(2)(3)(1)

4.5

2.8

0.75

Packaging specifications

z

Package
Code

Type

Basic ordering unit (pieces)

R5021ANX

z

Absolute maximum ratings (Ta=25qC)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Continuous
Pulsed
Continuous

Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum temperature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Bulk

−

500

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

500

±30
±21
±84

21
84

10.5

29.6
50

150

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

SP

I

AS

I

E

AS

P

D

Tch

Tstg °C

Inner circuit

Unit

V
V
A
A
A
A
A

mJ

W

°C

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

∗1

∗1 Body Diode

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Transistors

z

z

z

Thermal resistance

Parameter

Channel to case

z

Electrical characteristics (Ta=25qC)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

z

Body diode characteristics (Source-drain) (Ta=25qC)

Parameter Symbol

V

SD

∗ Pulsed

Symbol Limits Unit

Rth(ch-c)

Symbol

I

V

(BR)DSS

I

V

R

| Y

C
C
t

t

Q

GSS

DSS

GS(th)

DS(on)

fs

C

iss

oss

rss

d(on)

t

r

d(off)

f

t

g

Q

Q

gs

gd

Min.

−

500

−

2.5

∗

−

∗

|

7

−

−

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

Min. Typ. Max.

∗

−−1.5 V IS= 21A, VGS=0VForward voltage

2.5

Max. Unit Conditions

Typ.

±100

−

−

−

100

−

4.5

−

0.21

0.16

−

−

2300
1000

200

−

−

−

70

− ns

47

− VGS=10Vns

70

− RL=23.8Ωns

− RG=10Ωns

70

− VDD250V

64

− nC

11

− nC

27

Unit

°C/W

nA V

V

μA

V

Ω

S
pF
pF
pF

nC

GS

D

=1mA, VGS=0V

I

DS

V
V

DS

D

=10.5A, VGS=10V

I
I

D

=10.5A, VDS=10V

V

DS

V

GS

f=1MHz
I

D

=10.5A, VDD 250V

I

D

=21A

V

GS

R

L

=11.9Ω / RG=10Ω

Conditions

R5021ANX

=±30V, VDS=0V

=500V, VGS=0V
=10V, ID=1mA

=25V
=0V

=10V

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