Data Sheet
10V Drive Nch MOSFET
R5019ANX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
TO -220F M
10.0
φ
3.2
4.5
2.8
Features
15.0
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
(1) Gate
(2) Drain
(3) Source
14.0
Application
Switching
Packaging specifications Inner circuit
Package Bulk
Type
Code Basic ordering unit (pieces) 500
R5019ANX
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed
Continuous I
Pulsed
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.
=25C
*4 T
C
=50V, RG=25, Tch=25C
DD
E
I
I
I
DSS
GSS
*3
D
*1
DP
*3
S
*1
SP
*2
AS
*2
AS
*4
D
ch
55 to 150 C
stg
500 V
30 V
19 A
76
A
19 A
76
A
9.5 A
24.3 mJ
50 W
150 C
(1) Gate
(2) Drain
(3) Source
12.0
8.02.5
1.3
1.2
0.8
2.54 2.62.54
(2)(3)(1)
(1) (3)(2)
1 BODY DIODE
0.75
∗1
Thermal resistance
Parameter
Channel to Case R
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Symbol Limits Unit
th (ch-c)
2.5 C / W
1/5
2011.10 - Rev.A
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Data Sheet
R5019ANX
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=30V, VDS=0V
500 - - V ID=1mA, VGS=0V
- - 100 AVDS=500V, VGS=0V
2.5 - 4.5 V VDS=10V, ID=1mA
*
-
*
l 6.5 - - S VDS=10V, ID=9.5A
0.18 0.24
- 2050 - pF VDS=25V
- 1200 - pF VGS=0V
- 50 - pF f=1MHz
- 40 - ns VDD 250V, ID=9.5A
*
- 115 - ns VGS=10V
*
- 165 - ns RL=26.3
*
- 100 - ns RG=10
*
- 55 - nC VDD 250V
*
- 10 - nC ID=19A
*
- 24 - nC VGS=10V
*
ID=9.5A, VGS=10V
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V IS=19A, VGS=0V
2/5
2011.10 - Rev.A
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Data Sheet
R5019ANX
Electrical characteristic curves
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VGS= 0V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.01
0.1
1
10
0.1 1 10 100
VGS= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0
1
2
3
4
5
6
-50 0 50 100 150
V
DS
= 10V
ID= 1mA
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=5.0V
VGS=4.5V
VGS=10.0V
VGS=6.0V
VGS= 7.0V
VGS=8.0V
VGS=6.5V
Ta=25℃
pulsed
0
2
4
6
8
10
12
14
16
18
0 1 2 3 4 5 6 7 8 9 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=7.0V
VGS=6.5V
VGS=5.0V
VGS=4.5V
VGS=8.0V
VGS=6.0V
Ta=25℃
pulsed
0.001
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7
VDS= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Fig.3 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : I
D
(A)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
CHANNEL TEMPERATURE: Tch (℃)
GATE THRESHOLD VOLTAGE: V
GS(th)
(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10 12 14 16 18 20
Static Drain-Source On-State Resistance
R
DS(on)
[Ω]
Gate-Source Voltage : VGS [V]
Fig.6 Static Drain-Source On-State Resistance vs.
Gate-Source Voltage
ID=19A
ID=9.5A
Ta=25℃
pulsed
CHANNEL TEMPERATURE: Tch (℃)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : ID (A)
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
Fig.9 Source Current vs.
Sourse-Drain Voltage
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE CURRENT : I
S
(A)
0
0.1
0.2
0.3
0.4
0.5
-50 -25 0 25 50 75 100 125 150
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
VGS= 10V
Pulsed
ID= 9.5A
ID= 19.0A
3/5
2011.10 - Rev.A
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Data Sheet
R5019ANX
10
100
1000
10000
0 1 10 100
Fig.12 Reverse Recovery Time vs.
Source Current
Ta= 25℃
di / dt= 100A / μs
VGS= 0V
Pulsed
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
C
iss
C
oss
C
rss
Ta= 25℃
f= 1MHz
VGS= 0V
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS (V)
CAPACITANCE : C (pF)
0
5
10
15
0 10 20 30 40 50 60 70
Ta= 25℃
V
DD
= 250V
I
D
= 19A
R
G
= 10Ω
Pulsed
Fig.11 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE CURRENT : IS (A)
REVERSE RECOVERY TIME: t
rr
(ns)
Fig.13 Switching Characteristics
DRAIN CURRENT : ID (A)
SWITCHING TIME : t (ns)
1
10
100
1000
10000
0.01 0.1 1 10 100
V
DD
≒
250V
VGS=10V
RG=10W
Ta=25℃
Pulsed
t
r
t
f
t
d(off)
t
d(on)
4/5
2011.10 - Rev.A
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Data Sheet
R5019ANX
F
it
%
V
V
Fig.2-2 Gate Charge Waveform
V
F
S
Measurement circuits
V
GS
R
G
ig.1-1 Switching Time Measurement Circu
V
GS
I
G(Const.)
R
G
ig.2-1 Gate Charge Measurement Circuit
D.U.T.
D.U.T.
D
I
R
L
V
DD
D
I
R
L
V
DD
Pulse width
V
DS
50%
10%
GS
DS
10% 10%
90%
50%
90% 90
t
d(on)
t
on
t
d(off)
t
r
t
f
t
off
Fig.1-2 Switching Waveforms
V
G
V
D
GS
QgsQ
Q
g
gd
Charge
V
GS
R
G
D.U.T.
I
AS
L
DD
V
Fig.3-1 Avalanche Measurement Circuit
V
DS
V(BR)DSS
IAS
VDD
EAS =
1
L
2
V(BR)DSS
2
I
AS
V
(BR)DSS
-
VDD
Fig.3-2 Avalanche Waveform
5/5
2011.10 - Rev.A
Notes
Notice
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R1120A
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