ROHM R5019ANX Technical data

Data Sheet

10V Drive Nch MOSFET

R5019ANX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

(1) Gate
(2) Drain
(3) Source

14.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

R5019ANX 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I
Pulsed

Continuous I
Pulsed

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum temperature allowed.

=25C

*4 T

C

=50V, RG=25, Tch=25C

DD

E

I

I

I

DSS

GSS

*3

D

*1

DP

*3

S

*1

SP

*2

AS

*2

AS

*4

D

ch

55 to 150 C

stg

500 V

30 V

19 A

76

A

19 A

76

A

9.5 A

24.3 mJ

50 W

150 C

(1) Gate
(2) Drain
(3) Source

12.0

8.02.5

1.3

1.2

0.8

2.54 2.62.54

(2)(3)(1)

(1) (3)(2)

1 BODY DIODE

0.75

∗1

 Thermal resistance

Parameter

Channel to Case R

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Symbol Limits Unit

th (ch-c)

2.5 C / W

1/5

2011.10 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

R5019ANX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

500 - - V ID=1mA, VGS=0V

- - 100 AVDS=500V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

*

-

*

l 6.5 - - S VDS=10V, ID=9.5A

0.18 0.24

- 2050 - pF VDS=25V

- 1200 - pF VGS=0V

- 50 - pF f=1MHz

- 40 - ns VDD 250V, ID=9.5A

*

- 115 - ns VGS=10V

*

- 165 - ns RL=26.3

*

- 100 - ns RG=10

*

- 55 - nC VDD 250V

*

- 10 - nC ID=19A

*

- 24 - nC VGS=10V

*

ID=9.5A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=19A, VGS=0V

2/5

2011.10 - Rev.A