ROHM R5016FNX Technical data
Data Sheet
10V Drive Nch MOSFET
R5016FNX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
TO -220F M
10.0
φ
3.2
4.5
2.8
Features
15.0
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
(1) Gate
(2) Drain
(3) Source
14.0
Application
Switching
Packaging specifications Inner circuit
Package Bulk
Type
Code Basic ordering unit (pieces) 500
R5016FNX
(1) Gate
(2) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum channel temperature allowed.
=25°C
*4 T
C
=50V, RG=25, Tch=25°C
DD
E
DSS
GSS
*3
D
*1
DP
*3
S
*1
SP
*2
I
AS
*2
AS
*4
D
ch
55 to 150 C
stg
500 V
30 V
16 A
64 A
16 A
64 A
8A
17.1 mJ
50 W
150 C
(3) Source
12.0
8.02.5
1.3
(1) (3)(2)
1.2
0.8
2.54 2.62.54
(2)(3)(1)
0.75
1 BODY DIODE
∗1
Thermal resistance
Parameter
Channel to Case R
* TC=25°C
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© 2011 ROHM Co., Ltd. All rights reserved.
Symbol Limits Unit
*
th (ch-c)
2.5 C / W
1/6
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5016FNX
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=30V, VDS=0V
500 - - V ID=1mA, VGS=0V
- - 100 AVDS=500V, VGS=0V
3.0 - 5.0 V VDS=10V, ID=1mA
*
- 0.25 0.325
*
l 6.2 11 - S VDS=10V, ID=8A
- 1700 - pF VDS=25V
- 1000 - pF VGS=0V
- 35 - pF f=1MHz
- 35 - ns VDD 250V, ID=8.0A
*
- 60 - ns VGS=10V
*
- 110 - ns RL=31.25
*
- 35 - ns RG=10
*
- 46 - nC VDD 250V
*
- 11 - nC ID=8.0A
*
- 19 - nC VGS=10V
*
ID=8A, VGS=10V
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward voltage V
Reverse recovery time
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
*
t
rr
- - 1.5 V IS=16A, VGS=0V
75 100 125 ns
IS=16A, VGS=0V
di/dt=100A/s
2/6
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5016FNX
Electrical characteristic curves (Ta=25C)
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=5V
VGS=10V
VGS=6.5V
VGS=7V
VGS=5.5V
VGS=6V
VGS=8V
Ta=25℃
pulsed
0
5
10
15
20
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
FIg.2 Typical Output Characteristics (Ⅱ)
VGS=5V
VGS=10.0V
VGS=6.5V
VGS=8V
VGS=5.5V
VGS=6V
VGS=7V
Ta=25℃
pulsed
0.001
0.01
0.1
1
10
100
2 3 4 5 6 7 8
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
2
3
4
5
6
-50 0 50 100 150
Gate Threshold Voltage : V
GS(th)
[V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
VDS=10V
I
D
=1mA
pulsed
0.1
1
0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[Ω]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0
0.2
0.4
0.6
-50 0 50 100 150
Static Drain-Source On-State Resistance : R
DS(on)
[Ω]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
VGS=10V
pulsed
ID=16A
ID=8A
3/6
2011.10 - Rev.A
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