ROHM R5016FNX Technical data

Data Sheet

10V Drive Nch MOSFET

R5016FNX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

(1) Gate
(2) Drain
(3) Source

14.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

R5016FNX 

(1) Gate
(2) Drain

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

E

DSS

GSS

*3

D

*1

DP

*3

S

*1

SP

*2

I

AS

*2

AS

*4

D

ch

55 to 150 C

stg

500 V

30 V

16 A

64 A

16 A

64 A

8A

17.1 mJ

50 W

150 C

(3) Source

12.0

8.02.5

1.3

(1) (3)(2)

1.2

0.8

2.54 2.62.54

(2)(3)(1)

0.75

1 BODY DIODE

∗1

 Thermal resistance

Parameter

Channel to Case R

* TC=25°C

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Symbol Limits Unit

*

th (ch-c)

2.5 C / W

1/6

2011.10 - Rev.A

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Data Sheet

R5016FNX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

500 - - V ID=1mA, VGS=0V

- - 100 AVDS=500V, VGS=0V

3.0 - 5.0 V VDS=10V, ID=1mA

*

- 0.25 0.325

*

l 6.2 11 - S VDS=10V, ID=8A

- 1700 - pF VDS=25V

- 1000 - pF VGS=0V

- 35 - pF f=1MHz

- 35 - ns VDD 250V, ID=8.0A

*

- 60 - ns VGS=10V

*

- 110 - ns RL=31.25

*

- 35 - ns RG=10

*

- 46 - nC VDD 250V

*

- 11 - nC ID=8.0A

*

- 19 - nC VGS=10V

*

ID=8A, VGS=10V



Body diode characteristics (Source-Drain)

Parameter Conditions

Forward voltage V

Reverse recovery time

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

*

t

rr

- - 1.5 V IS=16A, VGS=0V

75 100 125 ns

IS=16A, VGS=0V
di/dt=100A/s

2/6

2011.10 - Rev.A

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Data Sheet

R5016FNX

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5V

VGS=10V

VGS=6.5V

VGS=7V

VGS=5.5V

VGS=6V

VGS=8V

Ta=25℃
pulsed

0

5

10

15

20

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

FIg.2 Typical Output Characteristics (Ⅱ)

VGS=5V

VGS=10.0V

VGS=6.5V

VGS=8V

VGS=5.5V

VGS=6V

VGS=7V

Ta=25℃
pulsed

0.001

0.01

0.1

1

10

100

2 3 4 5 6 7 8

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125℃

Ta= 75℃
Ta= 25℃

Ta= -25℃

2

3

4

5

6

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

0.1

1

0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

0

0.2

0.4

0.6

-50 0 50 100 150

Static Drain-Source On-State Resistance : R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=16A

ID=8A

3/6

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Data Sheet

R5016FNX

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

0.01

0.1

1

10

100

0 0.5 1 1.5 2

Source Current : I

S

[A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=16A

ID=8A

Ta=25℃
pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

V

DD

≒250V

V

GS

=10V

R

G

=10Ω

T

a

=25℃

Pulsed

0

2

4

6

8

10

12

0 10 20 30 40 50 60

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

T

a

=25℃

V

DD

=250V

I

D

=8A

Pulsed

1

10

100

1000

10000

100000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

℃

f=1MHz
VGS=0V

C

iss

C

oss

C

rss

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Data Sheet

R5016FNX

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25℃

Single Pulse

Rth

(ch-a)

=48.9℃/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

10

100

1000

0 1 10 100

Reverse Recovery Time : t

rr

[ns]

Source Current : IS [A]

Fig.15 Reverse Recovery Time vs. Source Current

T

a

=25℃

V

gs

=0V

di/dt=100A/us
Pulsed

0.01

0.1

1

10

100

1000

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

Ta=25℃
Single Pulse

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

5/6

2011.10 - Rev.A

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Data Sheet

R5016FNX

F

it

%

V
V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

V

GS

D

I

R

L

D.U.T.

V

R

G

DD

ig.1-1 Switching Time Measurement Circu

V

I

G(Const.)

GS

D.U.T.

D

I

R

L

V

DD

ig.2-1 Gate Charge Measurement Circuit

Pulse width

V

DS

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

I

AS

V

DD

1

2

L

E

AS

=

I

AS

2

V

(BR)DSS

V

(BR)DSS

- V

V

DD

(BR)DSS

Fig.3-2 Avalanche Waveform

6/6

2011.10 - Rev.A

Notes

Notice

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