ROHM R5016ANX Technical data

R5016ANX

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z

z

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Transistors

10V Drive Nch MOSFET

R5016ANX

Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V

GSS)

guaranteed to be r30V .

5) Drive circuits can be simple.

6) Parallel use is easy .

Applications

Switchi ng

Dimensions (Unit : mm)

TO-220FM

15.0

12.0

8.02.5

14.0

(1)Base
(2)Collector
(3)Emitter

φ

3.2

10.0

1.3

1.2

0.8

2.54 2.62.54

(2)(3)(1)

4.5

2.8

0.75

Packaging specifications

z

Package
Code
Basic ordering unit (pieces)

Type
R5016ANX

z

Absolute maximum ratings (T a=25qC)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum tempterature allowed

DD=50V, RG=25Ω, Starting, Tch=25°C

Continuous
Pulsed
Continuous
Pulsed

Symbol

V
V

Tstg °C

DSS

GSS

I

I

DP

I

I

SP

AS

I

E

P

Tch

D

S

AS

D

Bulk

−

500

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

500

±30
±16
±64

16
64

8
18
50

150

Unit

V
V
A
A
A
A
A

mJ

W
°C

Inner circuit

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

∗1

∗1 Body Diode

Thermal resistance

z

Parameter

Channel to case

Symbol Limits Unit

Rth(ch-c)

2.5

°C/W

Rev.A 1/5

Transistors

z

z

Electrical characteristics (Ta=25qC)

Parameter

Symbol

Gate-source leakage

V

Drain-source breakdown voltage

(BR)DSS

Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance

V

R

| Y
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

t
Rise time
Turn-off delay time

t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

z

Body diode characteristics (Source-drain) (T a =25qC)

Parameter Symbol

∗ Pulsed

∗

VSD −−1.5 V IS= 16A, VGS=0VForward voltage

Min.

GSS

I

−

500

I

DSS

GS(th)

DS(on)

C
C
C

d(on)

t

d(off)

t

Q
Q
Q

−

2.5

∗

−

∗

6.0

fs

|

−

iss

−

oss

−

rss

∗

−

∗

r

−

∗

−

∗

f

−

∗

g

−

∗

gs

−

∗

gd

−

Min. Typ. Max.

Max. Unit Conditions

Typ.

−

−

−

−

0.21

−

1800

750

55
40
50

150

55
50

9.5
21

±100

100

0.27

Unit

nA V

−

μA

4.5

−

−

−

−

− ns

pF
pF
pF

V

V

Ω

S

GS

I

D

=1mA, VGS=0V

V

DS

V

DS

I

D

=8A, VGS=10V

D

=8A, VDS=10V

I

DS

V

GS

V
f=1MHz
I

D

=8A, VDD 250V

− VGS=10Vns

− RL=31.3Ωns

− RG=10Ωns

nC

− VDD250V

− nC

− nC

D

=16A

I

GS

V

L

=15.6Ω / RG=10Ω

R

Conditions

R5016ANX

=±30V, VDS=0V

=500V, VGS=0V
=10V, ID=1mA

=25V
=0V

=10V

Rev.A 2/5