R5016ANX
z
z
z
z
z
z
z
z
Transistors
10V Drive Nch MOSFET
R5016ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS)
guaranteed to be r30V .
5) Drive circuits can be simple.
6) Parallel use is easy .
Applications
Switchi ng
Dimensions (Unit : mm)
TO-220FM
15.0
12.0
8.02.5
14.0
(1)Base
(2)Collector
(3)Emitter
φ
3.2
10.0
1.3
1.2
0.8
2.54 2.62.54
(2)(3)(1)
4.5
2.8
0.75
Packaging specifications
z
Package
Code
Basic ordering unit (pieces)
Type
R5016ANX
z
Absolute maximum ratings (T a=25qC)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum tempterature allowed
DD=50V, RG=25Ω, Starting, Tch=25°C
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg °C
DSS
GSS
I
I
DP
I
I
SP
AS
I
E
P
Tch
D
S
AS
D
Bulk
−
500
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
±30
±16
±64
16
64
8
18
50
150
Unit
V
V
A
A
A
A
A
mJ
W
°C
Inner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
∗1
∗1 Body Diode
Thermal resistance
z
Parameter
Channel to case
Symbol Limits Unit
Rth(ch-c)
2.5
°C/W
Rev.A 1/5
Transistors
z
z
Electrical characteristics (Ta=25qC)
Parameter
Symbol
Gate-source leakage
V
Drain-source breakdown voltage
(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
V
R
| Y
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
z
Body diode characteristics (Source-drain) (T a =25qC)
Parameter Symbol
∗ Pulsed
∗
VSD −−1.5 V IS= 16A, VGS=0VForward voltage
Min.
GSS
I
−
500
I
DSS
GS(th)
DS(on)
C
C
C
d(on)
t
d(off)
t
Q
Q
Q
−
2.5
∗
−
∗
6.0
fs
|
−
iss
−
oss
−
rss
∗
−
∗
r
−
∗
−
∗
f
−
∗
g
−
∗
gs
−
∗
gd
−
Min. Typ. Max.
Max. Unit Conditions
Typ.
−
−
−
−
0.21
−
1800
750
55
40
50
150
55
50
9.5
21
±100
100
0.27
Unit
nA V
−
μA
4.5
−
−
−
−
− ns
pF
pF
pF
V
V
Ω
S
GS
I
D
=1mA, VGS=0V
V
DS
V
DS
I
D
=8A, VGS=10V
D
=8A, VDS=10V
I
DS
V
GS
V
f=1MHz
I
D
=8A, VDD 250V
− VGS=10Vns
− RL=31.3Ωns
− RG=10Ωns
nC
− VDD250V
− nC
− nC
D
=16A
I
GS
V
L
=15.6Ω / RG=10Ω
R
Conditions
R5016ANX
=±30V, VDS=0V
=500V, VGS=0V
=10V, ID=1mA
=25V
=0V
=10V
Rev.A 2/5
Transistors
z
V
V
V
V
V10V
V
V
V
V
V
V
V10V
E
E
Electrical characteristics curves
100
Operation in this
area is limited
10
by R
(A)
D
DS(ON)
1
0.1
DRAIN CURRENT : I
Ta = 25°C
Single Pulse
0.01
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
PW= 100us
PW= 1ms
PW= 10ms
DC operation
30
8.0V
25
(A)
D
20
15
10
DRAIN CURRENT: I
5
7.0
6.5
6.0
5.5
5.0
VGS= 4.5
0
0 1020304050
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2 Typical Output Characteristics(㸇)
Ta= 25°C
Pulsed
R5016ANX
20
Ta= 25°C
Pulsed
15
(A)
D
10
5
DRAIN CURRENT: I
0
8.0
7.0
6.5
5.5
5.0
VGS= 4.5V
012345
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3 Typical Output Characteristics(㸈)
6.0
100
VDS= 10V
Pulsed
10
(A)
D
Ta= 125°C
Ta= 75°C
1
Ta= 25°C
Ta= -25°C
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 1.5 3.0 4.5 6.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
0.6
ID= 16.0A
Ta=25°C
Pulsed
0.5
(ȍ)
0.4
DS(on)
0.3
0.2
0.1
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STAT
ID= 8.0A
0
051015
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
6
(V)
VDS= 10V
5
= 1mA
I
GS(th)
D
4
3
2
1
0
GATE THRESHOLD VOLTAGE: V
-50 0 50 100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
0.6
VGS= 10V
0.5
Pulsed
) (ȍ)
0.4
DS(on
ID= 16.0A
0.3
0.2
RESISTANCE : R
0.1
STATIC DRAIN-SOURCE ON-STATE
0
-50 0 50 100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel
ID= 8.0A
10
VGS= 10V
Pulsed
(ȍ)
1
DS(on)
0.1
RESISTANCE : R
0.01
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
100
VDS= 10V
Pulsed
10
1
|Yfs| (S)
0.1
0.01
FORWARD TRANSFER ADMITTANCE :
0.01 0.1 1 10 100
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Rev.A 3/5
Transistors
s
L
100
(A)
VGS= 0V
DR
Pulsed
10
1
Ta= 125°C
0.1
REVERSE DRAIN CURRENT : I
0.01
00.511.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
Ta= 75°C
Ta= 25°C
Ta= -25°C
10000
1000
100
C
CAPACITANCE : C (pF)
f= 1MHz
V
= 0V
GS
Ta= 25°C
10
rss
1
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
R5016ANX
15
C
i
C
oss
(V)
Ta= 25°C
GS
V
= 250V
DD
= 16A
I
D
10
= 10ȍ
R
G
Pulsed
5
GATE-SOURCE VOLTAGE : V
0
0 10203040506070
TOTAL GATE CHARGE : Q
Fig.12 Dynamic Input Characteristics
(nC)
g
1000
(ns)
rr
100
Ta= 25°C
di / dt= 100A / μs
V
GS
REVERSE RECOVERY TIME: t
10
Pulsed
0.1 1 10 100
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
1
Ta = 25°C
Single Pulse : 1Unit
0.1
Rth䋨ch-a䋩䋨t䋩 = 䌲䋨t䋩×Rth䋨ch-a
Rth䋨ch-a䋩 = 48.9°C/W
0.01
= 0V
10000
Ta= 25°C
V
t
1000
100
10
SWITCHING TIME : t (ns)
f
t
d(off)
t
r
= 250V
DD
= 10V
V
GS
= 10ȍ
R
G
Pulsed
t
d(on)
1
0.01 0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.14 Switching䇭Characteristics
䋩
0.001
RESISTANCE : r (t)
0.0001
NORMARIZED TRANSIENT THERMA
0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
Rev.A 4/5
Transistors
z
Switching characteristics measurement circuit
Fig.1 Switching time measurement circuit! Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit! Fig.4 Gate charge waveform
Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform
R5016ANX
Rev.A 5/5
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
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It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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