A
g
C
10V Drive Nch MOSFET
R5016ANJ
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications zInner circuit
Switching
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
R5016ANJ
Tapin
TL
1000
zAbsolute maximum ratings (Ta=25°C)
LPTS
9.0
13.1
1.0
3.0
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
10.1
1.24
2.54
5.08
(1) (2) (3)
0.78
∗1
∗1 Body Diode
4.5
1.3
0.4
1.2
2.7
Each lead has same dimensions
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum tempterature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
±30
±16
±64
16
64
8
18
100
150
zThermal resistance
Parameter
hannel to case 1.25
Symbol Limits Unit
Rth(ch-c)
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C/W
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2009 ROHM Co., Ltd. All rights reserved.
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R5016ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Symbol
I
V
(BR)DSS
I
V
R
| Y
C
C
C
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Q
Q
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
∗
V
SD
Min.
GSS
−
500
DSS
GS(th)
DS(on)
oss
rss
d(on)
t
d(off)
t
Q
−
2.5
∗
−
∗
fs
|
6.0
iss
−
−
−
∗
−
∗
r
−
∗
−
∗
f
−
∗
g
−
∗
gs
−
∗
gd
−
Min. Typ. Max.
−−1.5 V IS= 16A, VGS=0VForward voltage
Max. Unit Conditions
Typ.
−
−
−
−
0.21
−
1800
750
55
40
50
150
55
50
9.5
21
±100
−
100
4.5
0.27
−
−
−
−
− ns
− VGS=10Vns
− RL=31.3Ωns
− RG=10Ωns
− V
− nC
− nC
Unit
nA V
V
µA
V
Ω
S
pF
pF
pF
nC
GS
D
=1mA, VGS=0V
I
DS
V
DS
V
D
=8A, VGS=10V
I
I
D
=8A, VDS=10V
V
DS
GS
V
f=1MHz
D
=8A, VDD 250V
I
DD
D
=16A
I
GS
V
L
=15.6Ω / RG=10Ω
R
Conditions
=±30V, VDS=0V
=500V, VGS=0V
=10V, ID=1mA
=25V
=0V
250V
=10V
Data Sheet
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R5016ANJ
zElectrical characteristics curves
100
Operation in this
area is limited
by R
DS(ON)
10
(A)
D
1
0.1
Ta = 25°C
DRAIN CURRENT : I
Single Pulse
0.01
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Area Fig.3 Typical Output Characteristics(Ⅱ)
PW= 10ms
DC operation
PW= 100us
PW= 1ms
30
10V
25
8.0V 6.5V
(A)
D
20
15
10
5
DRAIN CURRENT: I
0
0 1020304050
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2 Typical Output Characteristics(Ⅰ)
7.0V
6.0V
5.5V
5.0V
VGS= 4.5V
Ta= 25°C
Pulsed
20
15
(A)
D
10
DRAIN CURRENT: I
Data Sheet
Ta= 25°C
Pulsed
10V
8.0V
7.0V
6.5V
5
0
012345
DRAIN-SOURCE VOLTAGE: VDS (V)
6.0V
5.5V
5.0V
VGS= 4.5V
100
VDS= 10V
Pulsed
10
(A)
D
DRAIN CURRENT : I
STATIC DRAIN-SOURCE ON-STATE
Ta= 125°C
Ta= 75°C
1
Ta= 25°C
Ta= -25°C
0.1
0.01
0.001
0.0 1.5 3.0 4.5 6.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
0.6
0.5
(Ω)
0.4
DS(on)
0.3
0.2
RESISTANCE : R
0.1
ID= 8.0A
0
0 5 10 15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
ID= 16.0A
Ta= 25°C
Pulsed
6
(V)
GATE THRESHOLD VOLTAGE: V
STATIC DRAIN-SOURCE ON-STATE
VDS= 10V
5
= 1mA
I
GS(th)
(Ω)
DS(on)
RESISTANCE : R
D
4
3
2
1
0
-50 0 50 100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
0.6
VGS= 10V
0.5
Pulsed
0.4
0.3
0.2
0.1
0
-50 0 50 100 150
ID= 16.0A
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
ID= 8.0A
10
VGS= 10V
Pulsed
(Ω)
1
DS(on)
0.1
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0.01
0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
100
VDS= 10V
Pulsed
10
1
|Yfs| (S)
0.1
FORWARD TRANSFER ADMITTANCE :
0.01
0.01 0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta= -25 °C
Ta= 25 °C
Ta= 75 °C
Ta= 125°C
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R5016ANJ
100
(A)
DR
REVERSE DRAIN CURRENT : I
VGS= 0V
Pulsed
10
1
Ta= 125°C
0.1
0.01
00.511.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
Ta= 75 °C
Ta= 25 °C
Ta= -25 °C
10000
1000
100
Ta= 25°C
10
CAPACITANCE : C (pF)
f= 1MHz
= 0V
V
GS
1
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
C
C
C
oss
rss
(V)
GS
GATE-SOURCE VOLTAGE : V
15
10
Data Sheet
Ta= 25°C
= 250V
V
DD
I
= 16A
D
R
= 10Ω
G
Pulsed
5
0
0 10203040506070
TOTAL GA TE C HA RGE : Q
Fig.12 Dynamic Input Characteristics
(nC)
g
1000
(ns)
rr
100
REVERSE RECOVERY TIME: t
10
0.1 1 10 100
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
1
Ta = 25°C
Single Pulse : 1Unit
0.1
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a
Rth（ch-a） = 48.9°C/W
0.01
RESISTANCE : r (t)
0.001
Ta= 25°C
di / dt= 100A / µs
= 0V
V
GS
Pulsed
10000
t
1000
100
10
SWITCHING TIME : t (ns)
1
0.01 0.1 1 10 100
）
f
t
d(off)
t
r
DRAIN CURRENT : ID (A)
Fig.14 Switching Characteristics
Ta= 25°C
V
= 250V
DD
V
= 10V
GS
R
= 10Ω
G
Pulsed
t
d(on)
NORMARIZED TRANSIENT THERMAL
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
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PULSE WIDTH : Pw(s)
4/5
2009.02 - Rev.
A
R5016ANJ
zSwitching characteristics measurement circuit
Fig.1 Switching time measurement circuit Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform
Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform
Data Sheet
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Appendix
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM
CO.,LTD.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-
sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-
sponsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment
or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-
tronic appliances and amusement devices).
The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your
use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system
which requires an extremely high level of reliability the failure or malfunction of which may result in a direct
threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,
aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear
no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-
ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under
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Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
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Copyright © 2009 ROHM Co.,Ltd.
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Appendix-Rev4.0
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