ROHM R5016ANJ Technical data

g
C
10V Drive Nch MOSFET
R5016ANJ
zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications zInner circuit
Switching
zPackaging specifications
Package Code
Type
Basic ordering unit (pieces)
R5016ANJ
Tapin
TL
1000
zAbsolute maximum ratings (Ta=25°C)
LPTS
9.0
13.1
1.0
3.0
(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source)
(1) (2) (3)
(1) Gate (2) Drain (3) Source
10.1
1.24
2.54
5.08
(1) (2) (3)
0.78
1
1 Body Diode
4.5
1.3
0.4
1.2
2.7
Each lead has same dimensions
Parameter Drain-source voltage Gate-source voltage
Drain current
Source current (Body Diode)
Continuous Pulsed Continuous
Pulsed Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature
1 Pw10µs, Duty cycle1%2 L 500µH, V3 Limited only by maximum tempterature allowed
DD
=50V, RG=25, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
3131
2
2
55 to +150
Limits
500
±30 ±16 ±64
16 64
8
18 100 150
zThermal resistance
Parameter
hannel to case 1.25
Symbol Limits Unit
Rth(ch-c)
Unit
V V A A A A A
mJ
W
°C
°C/W
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2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.02 - Rev.
R5016ANJ
zElectrical characteristics (Ta=25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time
Symbol
I
V
(BR)DSS
I
V
R
| Y
C C C t
Rise time Turn-off delay time
t
Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Q Q
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
Pulsed
V
SD
Min.
GSS
500
DSS
GS(th)
DS(on)
oss
rss
d(on)
t
d(off)
t
Q
2.5
fs
|
6.0
iss
r
f
g
gs
gd
Min. Typ. Max.
−−1.5 V IS= 16A, VGS=0VForward voltage
Max. Unit Conditions
Typ.
0.21
1800
750
55 40 50
150
55 50
9.5 21
±100
100
4.5
0.27
ns
VGS=10Vns
RL=31.3ns
RG=10ns
V
nC
nC
Unit
nA V
V
µA
V
S pF pF pF
nC
GS
D
=1mA, VGS=0V
I
DS
V
DS
V
D
=8A, VGS=10V
I I
D
=8A, VDS=10V
V
DS
GS
V f=1MHz
D
=8A, VDD 250V
I
DD
D
=16A
I
GS
V
L
=15.6 / RG=10
R
Conditions
30V, VDS=0V
=500V, VGS=0V =10V, ID=1mA
=25V =0V
250V
=10V
Data Sheet
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2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.02 - Rev.
R5016ANJ
zElectrical characteristics curves
100
Operation in this area is limited by R
DS(ON)
10
(A)
D
1
0.1
Ta = 25°C
DRAIN CURRENT : I
Single Pulse
0.01
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Area Fig.3 Typical Output Characteristics(Ⅱ)
PW= 10ms
DC operation
PW= 100us
PW= 1ms
30
10V
25
8.0V 6.5V
(A)
D
20
15
10
5
DRAIN CURRENT: I
0
0 1020304050
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2 Typical Output Characteristics(Ⅰ)
7.0V
6.0V
5.5V
5.0V
VGS= 4.5V
Ta= 25°C Pulsed
20
15
(A)
D
10
DRAIN CURRENT: I
Data Sheet
Ta= 25°C Pulsed
10V
8.0V
7.0V
6.5V
5
0
012345
DRAIN-SOURCE VOLTAGE: VDS (V)
6.0V
5.5V
5.0V
VGS= 4.5V
100
VDS= 10V
Pulsed
10
(A)
D
DRAIN CURRENT : I
STATIC DRAIN-SOURCE ON-STATE
Ta= 125°C Ta= 75°C
1
Ta= 25°C Ta= -25°C
0.1
0.01
0.001
0.0 1.5 3.0 4.5 6.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
0.6
0.5
(Ω)
0.4
DS(on)
0.3
0.2
RESISTANCE : R
0.1
ID= 8.0A
0
0 5 10 15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage
ID= 16.0A
Ta= 25°C Pulsed
6
(V)
GATE THRESHOLD VOLTAGE: V
STATIC DRAIN-SOURCE ON-STATE
VDS= 10V
5
= 1mA
I
GS(th)
(Ω)
DS(on)
RESISTANCE : R
D
4
3
2
1
0
-50 0 50 100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage vs. Channel Temperature
0.6
VGS= 10V
0.5
Pulsed
0.4
0.3
0.2
0.1
0
-50 0 50 100 150
ID= 16.0A
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature
ID= 8.0A
10
VGS= 10V
Pulsed
(Ω)
1
DS(on)
0.1
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0.01
0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
100
VDS= 10V
Pulsed
10
1
|Yfs| (S)
0.1
FORWARD TRANSFER ADMITTANCE :
0.01
0.01 0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance vs. Drain Current
Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C
Ta= -25 °C Ta= 25 °C Ta= 75 °C Ta= 125°C
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R5016ANJ
100
(A)
DR
REVERSE DRAIN CURRENT : I
VGS= 0V
Pulsed
10
1
Ta= 125°C
0.1
0.01
00.511.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
Ta= 75 °C Ta= 25 °C Ta= -25 °C
10000
1000
100
Ta= 25°C
10
CAPACITANCE : C (pF)
f= 1MHz
= 0V
V
GS
1
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs. Drain-Source Voltage
C
C
C
oss
rss
(V)
GS
GATE-SOURCE VOLTAGE : V
15
10
Data Sheet
Ta= 25°C
= 250V
V
DD
I
= 16A
D
R
= 10
G
Pulsed
5
0
0 10203040506070
TOTAL GA TE C HA RGE : Q
Fig.12 Dynamic Input Characteristics
(nC)
g
1000
(ns)
rr
100
REVERSE RECOVERY TIME: t
10
0.1 1 10 100
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Reverse Recovery Time vs.Reverse Drain Current
1
Ta = 25°C Single Pulse : 1Unit
0.1
Rth(ch-a)(t) = r(t)×Rth(ch-a Rth(ch-a) = 48.9°C/W
0.01
RESISTANCE : r (t)
0.001
Ta= 25°C di / dt= 100A / µs
= 0V
V
GS
Pulsed
10000
t
1000
100
10
SWITCHING TIME : t (ns)
1
0.01 0.1 1 10 100
f
t
d(off)
t
r
DRAIN CURRENT : ID (A)
Fig.14 Switching Characteristics
Ta= 25°C V
= 250V
DD
V
= 10V
GS
R
= 10
G
Pulsed
t
d(on)
NORMARIZED TRANSIENT THERMAL
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
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PULSE WIDTH : Pw(s)
4/5
2009.02 - Rev.
R5016ANJ
zSwitching characteristics measurement circuit
Fig.1 Switching time measurement circuit Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform
Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform
Data Sheet
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2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.02 - Rev.
Appendix
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upon request.
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standard usage and operations of the Products. The peripheral conditions must be taken into account
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sponsibility for such damage.
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Appendix-Rev4.0
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