R5013ANX
z
z
z
z
z
z
z
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Transistors
10V Drive Nch MOSFET
R5013ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS)
guaranteed to be r30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications
Switching
Dimensions (Unit : mm)
TO-220FM
15.0
12.0
8.02.5
1.3
14.0
(1)Base
(2)Collector
(3)Emitter
φ3.2
10.0
(2)(3)(1)
4.5
2.8
1.2
0.8
0.75
2.54 2.62.54
z
Packaging specifications
Package
Code
Basic ordering unit (pieces)
Type
R5013ANX
z
Absolute maximum ratings (Ta=25qC)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum tempterature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
I
DP
I
SP
I
I
AS
E
P
Tch
Tstg °C
D
S
AS
D
Bulk
−
500
∗3
∗1
∗3
∗1
∗2
∗2
Limits
500
±30
±13
±52
13
52
13
46
50
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
Inner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
∗1
∗1 Body Diode
Thermal resistance
z
Parameter
Channel to case
Symbol Limits Unit
Rth(ch-c)
2.5
°C/W
Rev.A 1/5
Transistors
z
z
Electrical characteristics (Ta=25qC)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
z
Body diode characteristics (Source-drain) (Ta=25qC)
Parameter Symbol
∗ Pulsed
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
d(on)
t
t
r
d(off)
t
f
t
g
Q
Q
gs
Q
gd
Min. Typ. Max.
∗
V
SD
Min.
−
500
−
2.5
∗
−
∗
4.0
−
−
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−
−−1.5 V IS= 13A, VGS=0VForward voltage
Max. Unit Conditions
Typ.
−
−
−
−
0.29
−
1300
500
40
30
32
90
30
35
8
15
±100
−
100
4.5
0.38
−
−
−
−
− ns
− VGS=10Vns
− RL=38.5Ωns
− RG=10Ωns
− VDD250V
− nC
− nC
Unit
nA V
V
μA
V
Ω
S
pF
pF
pF
nC
GS
D
=1mA, VGS=0V
I
DS
V
V
DS
D
=6.5A, VGS=10V
I
I
D
=6.5A, VDS=10V
DS
V
V
GS
f=1MHz
D
=6.5A, VDD 250V
I
I
D
=13A
V
GS
R
L
=19.2Ω / RG=10Ω
Conditions
R5013ANX
=±30V, VDS=0V
=500V, VGS=0V
=10V, ID=1mA
=25V
=0V
=10V
Rev.A 2/5
Transistors
z
V
V
V
V10V
V
V
V
V
V
V
V
V10V
E
E
Electrical characteristic curves
100
Operation in this
area is limi ted
10
by R
(A)
D
DS(ON)
1
0.1
Ta = 25°C
DRAIN CURRENT : I
Single Pulse
0.01
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
PW=100us
PW=1ms
DC operation
20
15
(A)
D
10
5
DRAIN CURRENT: I
8.0
7.0
6.5
5.5
5.0V
VGS= 4.5
0
0 1020304050
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2: Typical Output Characteristics(㸇)
6.0
Ta= 25° C
Pulsed
R5013ANX
10
Ta= 25°C
Pulsed
8
(A)
D
6
4
2
DRAIN CURRENT: I
0
8.0
7.0
6.5
6.0
VGS= 4.5
012345
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3: Typical Output Characteristics(㸈)
5.5
5.0
100
VDS= 10V
Pulsed
10
(A)
D
Ta= 125°C
Ta= 75°C
1
Ta= 25°C
Ta= -25 °C
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 1.5 3.0 4.5 6.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
1
Ta=25°C
0.8
Pulsed
(ȍ)
0.6
DS(on)
0.4
ID= 13.0A
ID= 6.5A
0.2
RESISTANCE : R
0
STATIC DRAIN-SOURCE ON-STA T
051015
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
6
(V)
VDS= 10V
5
I
= 1mA
GS(th)
D
4
3
2
1
0
GATE THRESHOLD VOLTAGE: V
-50 0 50 100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel
1
VGS= 10V
Pulsed
0.8
) (ȍ)
DS(on
0.6
ID= 13.0A
0.4
0.2
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0
ID= 6.5A
-50 0 50 100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel
10
VGS= 10V
Pulsed
(ȍ)
1
DS(on)
0.1
RESISTANCE : R
0.01
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
100
VDS= 10V
Pulsed
10
1
|Yfs| (S)
0.1
0.01
FORWARD TRANSFER ADMITTANCE :
0.01 0.1 1 10 100
Ta= -25 °C
Ta= 25° C
Ta= 75° C
Ta= 125 °C
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25 °C
Rev.A 3/5
Transistors
L
100
(A)
REVERSE DRA IN CURRENT : I
VGS= 0V
DR
Pulsed
10
1
0.1
0.01
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
Ta= 125°C
Ta= 75° C
Ta= 25° C
Ta= -25 °C
10000
1000
100
Ta= 25° C
10
CAPACITANCE : C (pF)
f= 1MHz
= 0V
V
GS
C
rss
1
0.01 0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
R5013ANX
15
C
C
oss
(V)
Ta= 2 5°C
GS
V
= 250V
DD
I
= 13A
D
10
= 10ȍ
R
G
Pulsed
5
GATE-S OURCE V OLTAGE : V
0
0 1020304050
TOTAL GA TE CHAR GE : Q
Fig.12 Dynamic Input Characteristic s
(nC)
g
1000
(ns)
rr
100
Ta= 2 5°C
di / dt= 100A / μs
V
GS
REVERSE RECOVERY TIME: t
10
Pulsed
0.1 1 10 100
REVERSE DRA IN CURRENT : IDR (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
1
Ta = 25°C
Single Pulse : 1Unit
0.1
Rth䋨ch-a䋩䋨t䋩 = 䌲䋨t䋩×Rth䋨ch-a
Rth䋨ch-a䋩 = 49.9°C/W
0.01
= 0V
10000
Ta= 25° C
V
t
1000
100
f
t
d(off)
10
SWITCHING TIME : t (ns)
t
r
= 250V
DD
= 10V
V
GS
R
= 10ȍ
G
Pulsed
t
d(on)
1
0.01 0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.14 Switchin g䇭Characteristics
䋩
0.001
RESISTANCE : r (t)
0.0001
NORMARIZED TRANSIENT THERMA
0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE W IDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resis tance vs. Pulse W idth
Rev.A 4/5
Transistors
z
Switching characteristics measurement circuit
Fig.1 Switching time measurement circuit! Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit! Fig.4 Gate charge waveform
Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform
R5013ANX
Rev.A 5/5
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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