ROHM R5013ANX Technical data

R5013ANX

z

z

z

z

z

z

z

z

Transistors

10V Drive Nch MOSFET

R5013ANX

Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V

GSS)

guaranteed to be r30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

Applications

Switching

Dimensions (Unit : mm)

TO-220FM

15.0

12.0

8.02.5

1.3

14.0

(1)Base
(2)Collector
(3)Emitter

φ3.2

10.0

(2)(3)(1)

4.5

2.8

1.2

0.8

0.75

2.54 2.62.54

z

Packaging specifications

Package
Code
Basic ordering unit (pieces)

Type
R5013ANX

z

Absolute maximum ratings (Ta=25qC)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum tempterature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Continuous
Pulsed
Continuous
Pulsed

Symbol

V

DSS

V

GSS

I

I

DP

I

SP

I
I

AS

E

P

Tch

Tstg °C

D

S

AS

D

Bulk

−

500

∗3
∗1
∗3
∗1

∗2

∗2

Limits

500

±30
±13
±52

13
52
13
46
50

150

−55 to +150

Unit

V
V
A
A
A
A
A

mJ

W
°C

Inner circuit

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

∗1

∗1 Body Diode

Thermal resistance

z

Parameter

Channel to case

Symbol Limits Unit

Rth(ch-c)

2.5

°C/W

Rev.A 1/5

Transistors

z

z

Electrical characteristics (Ta=25qC)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

z

Body diode characteristics (Source-drain) (Ta=25qC)

Parameter Symbol

∗ Pulsed

Symbol

I

GSS

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

| Y

fs

|

C

iss

C

oss

C

rss

d(on)

t

t

r

d(off)

t

f

t

g

Q

Q

gs

Q

gd

Min. Typ. Max.

∗

V

SD

Min.

−

500

−

2.5

∗

−

∗

4.0

−

−

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

−−1.5 V IS= 13A, VGS=0VForward voltage

Max. Unit Conditions

Typ.

−

−

−

−

0.29

−

1300

500

40
30
32
90
30
35

8

15

±100

−

100

4.5

0.38

−

−

−

−

− ns

− VGS=10Vns

− RL=38.5Ωns

− RG=10Ωns

− VDD250V

− nC

− nC

Unit

nA V

V

μA

V

Ω

S
pF
pF
pF

nC

GS

D

=1mA, VGS=0V

I

DS

V
V

DS

D

=6.5A, VGS=10V

I
I

D

=6.5A, VDS=10V

DS

V
V

GS

f=1MHz

D

=6.5A, VDD 250V

I

I

D

=13A

V

GS

R

L

=19.2Ω / RG=10Ω

Conditions

R5013ANX

=±30V, VDS=0V

=500V, VGS=0V
=10V, ID=1mA

=25V
=0V

=10V

Rev.A 2/5