C
10V Drive Nch MOSFET
R5013ANJ
zStructure zDimensions (Unit : mm)
Unit
V
V
A
A
A
A
A
mJ
W
°C
LPTS
7.25
13.1
1.0
3.0
2.54
(1) Gate
(2) Drain
(3) Source
LPTL
(1) Gate
(2) Drain
(3) Source
∗1 Body Diode
(1) (2) (3)
8.9
4.8
(1) (2) (3)
(1) (2) (3)
°C/W
10.1
1.24
5.08
4.5
9.0
0.78
Each lead has same dimensions
Each lead has same dimensions
∗1
0.4
2.7
1.3
1.2
(1) Gate
(2) Drain
(3) Source
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
GSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zPackaging specifications zInner circuit
LPTS
LPTL
Taping
1000
TL
TLL
Package
Type
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
±30
±13
±52
13
52
6.5
11.3
100
150
zThermal resistance
Parameter
hannel to case 1.25
Symbol Limits Unit
Rth(ch-c)
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2009 ROHM Co., Ltd. All rights reserved.
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2009.04 - Rev.A
R5013ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Symbol
GSS
I
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
| Y
fs
C
iss
C
oss
C
rss
d(on)
t
t
r
t
d(off)
t
f
Q
g
Q
gs
gd
Q
∗
∗
|
∗
∗
∗
∗
∗
∗
∗
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
∗
V
SD
−−1.5 V IS= 13A, VGS=0VForward voltage
Min.
−
500
−
2.5
−
4.0
−
−
−
−
−
−
−
−
−
−
Typ.
Max. Unit Conditions
−
−
−
−
0.29
−
1300
500
40
30
32
90
30
35
8
15
±100
−
100
4.5
0.38
−
−
−
−
− VDD 250V, ID=6.5Ans
− VGS=10Vns
− RL=38.5Ωns
− RG=10Ωns
−
− nC
− nC
Unit
nA V
V
µA
V
Ω
S
pF
pF
pF
nC
GS
D
=1mA, VGS=0V
I
DS
V
DS
V
I
D
=6.5A, VGS=10V
DS
V
DS
V
GS
V
f=1MHz
V
DD
D
=13A
I
GS
V
L
=19.2Ω / RG=10Ω
R
Conditions
=±30V, VDS=0V
=500V, VGS=0V
=10V, ID=1mA
=10V, ID=6.5A
=25V
=0V
250V
=10V
Data Sheet
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2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.04 - Rev.A
V
V10V
E
E
R5013ANJ
zElectrical characteristic curves
Data Sheet
100
Operation in this
area is limited
by R
DS(ON)
10
(A)
D
1
0.1
Tc = 25°C
DRAIN CURRENT : I
Single Pulse
0.01
0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : V
Fig.1 Maximum Safe Operating Aera
100
VDS= 10V
Pulsed
10
(A)
D
Ta= 125°C
Ta= 75°C
1
Ta= 25°C
Ta= -25°C
0.1
0.01
DRAIN CURRENT : I
0.001
0.0 1.5 3.0 4.5 6.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
DC operation
PW=100us
PW=1ms
20
15
(A)
D
10
5
DRAIN CURRENT: I
0
01020304050
( V )
DS
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2 Typical Output Characteristics(Ⅰ)
6
(V)
VDS= 10V
5
I
= 1mA
GS(th)
D
4
3
2
1
0
GATE THRESHOLD V OLTAGE: V
-50 0 50 100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
6.5
8.0V
7.0
5.5V
5.0V
VGS= 4.5V
6.0V
Ta= 25°C
Pulsed
10
Ta= 25°C
Pulsed
8
(A)
D
6
6.5V
4
6.0V
2
DRAIN CURRENT: I
0
012345
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3 Typical Output Characteristics(Ⅱ)
10
VGS= 10V
Pulsed
(Ω)
1
DS(on)
0.1
RESISTANCE : R
0.01
STATIC DRAIN-SOURCE ON-STAT
0.1 1 10 100
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
10V
8.0V
7.0V
DRAIN CURRENT : ID (A)
5.5V
5.0V
VGS= 4.5V
Ta= 125°C
Ta= 75° C
Ta= 25° C
Ta= -25°C
1
Ta=25°C
0.8
(Ω)
0.6
DS(on)
0.4
ID= 6.5A
0.2
RESISTANCE : R
0
STATIC DRAIN-SOURCE ON-STAT
0 5 10 15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
Pulsed
ID= 13.0A
1
VGS= 10V
Pulsed
0.8
(Ω)
DS(on)
0.6
0.4
0.2
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0
-50 0 50 100 150
ID= 13.0A
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel
ID= 6.5A
100
VDS= 10V
Pulsed
10
1
|Yfs| (S)
0.1
0.01
FORWARD TRANSFER ADMITTANCE :
0.01 0.1 1 10 100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
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L
R5013ANJ
100
(A)
REVERSE DRA IN CURRENT : I
VGS= 0V
DR
Pulsed
10
1
Ta= 125°C
0.1
0.01
00.511.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 R everse Drain C urrent vs.
Sourse-Drain Voltage
Ta= 75° C
Ta= 25° C
Ta= -25°C
10000
1000
100
Ta= 25° C
10
CAPACITANCE : C (pF)
f= 1MHz
V
GS
1
0.01 0.1 1 10 100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
= 0V
C
rss
C
iss
C
oss
15
(V)
GS
10
GATE-SOURCE VOLTAGE : V
Data Sheet
Ta= 2 5°C
V
= 250V
DD
= 13A
I
D
= 10Ω
R
G
Pulsed
5
0
0 1020304050
TOTAL GA TE CH AR GE : Q
Fig.12 Dynamic Input Characteristics
(nC)
g
1000
(ns)
rr
100
REVERSE RECOVERY TIME: t
10
0.1 1 10 100
REVERSE DRAIN CURRENT : IDR (A)
Fi g.1 3 Reve rs e R ec ove ry Ti m e
vs.Reverse Drain Current
1
Ta = 25°C
Single Pulse : 1 Unit
0.1
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a
Rth（ch-a） = 49.9°C/W
0.01
Ta= 25° C
di / dt= 100A / µs
V
= 0V
GS
Pulsed
）
10000
t
1000
100
10
SWITCHING TIME : t (ns)
1
0.01 0.1 1 10 100
f
t
d(off)
t
r
DRAIN CURRENT : ID (A)
Fig.14 Switching Characteristics
Ta= 25° C
V
= 250V
DD
= 10V
V
GS
R
= 10Ω
G
Pulsed
t
d(on)
0.001
RESISTANCE : r (t)
0.0001
NORMARIZED TRANSIENT THERMA
0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resis tance vs. Pulse W idth
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2009.04 - Rev.A
F
it
S
%
V
V
F
S
Fig.2-2 Gate charge waveform
V
Fig.3-1 Avalanche Measurement circuit
S
V
S
R5013ANJ
zSwitching characteristics measurement circuit
Pulse width
V
GS
R
G
D.U.T.
D
I
V
D
R
L
V
DD
GS
DS
50%
10%
10% 10%
t
d(on)
t
on
90%
50%
90% 90
t
t
r
d(off)
t
off
t
f
Data Sheet
ig.1-1 Switching time measurement circu
V
I
G(Const.)
GS
R
G
D.U.T.
D
I
R
L
V
DD
ig.2-1 Gate charge measurement circuit
V
GS
R
G
D.U.T.
I
AS
L
V
D
Fig.1-2 Switching waveforms
V
G
Q
g
GS
QgsQ
gd
Charge
V
D
I
AS
DD
1
E
L
AS
=
2
V
2
I
AS
D(BR)DSS
V
D(BR)DSS
- V
V
D(BR)DS
DD
Fig.3-2 Avalanche waveform
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Notes
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The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
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Please be sure to implement in your equipment using the Products safety measures to guard
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