ROHM R5013ANJ Technical data
C
10V Drive Nch MOSFET
R5013ANJ
zStructure zDimensions (Unit : mm)
Unit
V
V
A
A
A
A
A
mJ
W
°C
LPTS
7.25
13.1
1.0
3.0
2.54
(1) Gate
(2) Drain
(3) Source
LPTL
(1) Gate
(2) Drain
(3) Source
∗1 Body Diode
(1) (2) (3)
8.9
4.8
(1) (2) (3)
(1) (2) (3)
°C/W
10.1
1.24
5.08
4.5
9.0
0.78
Each lead has same dimensions
Each lead has same dimensions
∗1
0.4
2.7
1.3
1.2
(1) Gate
(2) Drain
(3) Source
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
GSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zPackaging specifications zInner circuit
LPTS
LPTL
Taping
1000
TL
TLL
Package
Type
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
±30
±13
±52
13
52
6.5
11.3
100
150
zThermal resistance
Parameter
hannel to case 1.25
Symbol Limits Unit
Rth(ch-c)
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○
2009 ROHM Co., Ltd. All rights reserved.
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2009.04 - Rev.A
R5013ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Symbol
GSS
I
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
| Y
fs
C
iss
C
oss
C
rss
d(on)
t
t
r
t
d(off)
t
f
Q
g
Q
gs
gd
Q
∗
∗
|
∗
∗
∗
∗
∗
∗
∗
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
∗
V
SD
−−1.5 V IS= 13A, VGS=0VForward voltage
Min.
−
500
−
2.5
−
4.0
−
−
−
−
−
−
−
−
−
−
Typ.
Max. Unit Conditions
−
−
−
−
0.29
−
1300
500
40
30
32
90
30
35
8
15
±100
−
100
4.5
0.38
−
−
−
−
− VDD 250V, ID=6.5Ans
− VGS=10Vns
− RL=38.5Ωns
− RG=10Ωns
−
− nC
− nC
Unit
nA V
V
µA
V
Ω
S
pF
pF
pF
nC
GS
D
=1mA, VGS=0V
I
DS
V
DS
V
I
D
=6.5A, VGS=10V
DS
V
DS
V
GS
V
f=1MHz
V
DD
D
=13A
I
GS
V
L
=19.2Ω / RG=10Ω
R
Conditions
=±30V, VDS=0V
=500V, VGS=0V
=10V, ID=1mA
=10V, ID=6.5A
=25V
=0V
250V
=10V
Data Sheet
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.04 - Rev.A
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