ROHM R5011FNX Technical data
C
10V Drive Nch MOSFET
R5011FNX
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Fast reverse recovery time.
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (V
GSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications
Switching
zInner circuit
zPackaging specifications
Package
Type
Basic ordering unit (pieces)
R5011FNX
Bulk
500
zAbsolute maximum ratings (Ta=25°C)
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
±30
±11
±44
11
44
5.5
8.1
50
150
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
zThermal resistance
Parameter
hannel to case 2.5
Symbol Limits Unit
Rth(ch-c)
Unit
V
V
A
A
A
A
A
mJ
W
°C
TO-220FM
15.0
14.0
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
∗1 Body Diode
°C/W
φ3.2
0.75
(1) Gate
(2) Drain
(3) Source
4.5
2.8
10.0
12.0
8.02.5
1.3
1.2
0.8
2.54 2.62.54
(2)(3)(1)
∗1
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.03 - Rev.A
R5011FNX
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Symbol
GSS
I
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
gd
Q
∗
∗
∗
∗
∗
∗
∗
∗
∗
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
Forward voltage
Forward recovery time
∗ Pulsed
Min. Typ. Max.
∗
V
SD
∗
t
rr
−−1.5
Min.
−
500
−
2.0
−
4.5
−
−
−
−
−
−
−
−
−
−
Typ.
Max. Unit Conditions
GS
−
−
−
−
0.40
−
950
580
30
26
28
75
30
30
7
12
±100
−
100
4.0
0.52
−
−
−
−
− VDD 250V, ID=5.5Ans
− VGS=10Vns
− RL=45.5Ωns
− RG=10Ωns
−
− nC
− nC
Unit
nA V
V
µA
V
Ω
S
pF
pF
pF
nC
=±30V, VDS=0V
D
=1mA, VGS=0V
I
DS
=500V, VGS=0V
V
V
DS
=10V, ID=1mA
I
D
=5.5A, VGS=10V
DS
=10V, ID=5.5A
V
V
DS
=25V
GS
=0V
V
f=1MHz
V
DD
D
=11A
I
GS
=10V
V
L
=22.7Ω / RG=10Ω
R
Conditions
VnsIS= 11A, VGS=0V
= 11A, di/dt=100A/µs
I
1158555
F
250V
Data Sheet
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.03 - Rev.A
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