ROHM R5011FNX Technical data

C

10V Drive Nch MOSFET

R5011FNX

zStructure zDimensions (Unit : mm)

Silicon N-channel MOSFET

zFeatures

1) Fast reverse recovery time.

2) Low on-resistance.

3) Fast switching speed.

4) Gate-source voltage (V

GSS) guaranteed to be ±30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

zApplications

Switching

zInner circuit

zPackaging specifications

Package

Type

Basic ordering unit (pieces)

R5011FNX

Bulk

500

zAbsolute maximum ratings (Ta=25°C)

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

500

±30
±11
±44

11
44

5.5

8.1
50

150

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Continuous
Pulsed
Continuous

Pulsed
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

SP

I

AS

I

AS

E

P

D

Tch

Tstg °C

zThermal resistance

Parameter

hannel to case 2.5

Symbol Limits Unit

Rth(ch-c)

Unit

V
V
A
A
A
A
A

mJ

W

°C

TO-220FM

15.0

14.0

(1) Gate
(2) Drain
(3) Source

(1) (2) (3)

∗1 Body Diode

°C/W

φ3.2

0.75

(1) Gate
(2) Drain
(3) Source

4.5

2.8

10.0

12.0

8.02.5

1.3

1.2

0.8

2.54 2.62.54

(2)(3)(1)

∗1

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R5011FNX

zElectrical characteristics (Ta=25°C)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Symbol

GSS

I

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

| Y

fs

|

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

gd

Q

∗

∗

∗

∗

∗

∗

∗

∗

∗

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol
Forward voltage
Forward recovery time

∗ Pulsed

Min. Typ. Max.

∗

V

SD

∗

t

rr

−−1.5

Min.

−

500

−

2.0

−

4.5

−

−

−

−

−

−

−

−

−

−

Typ.

Max. Unit Conditions

GS

−

−

−

−

0.40

−

950
580

30
26
28
75
30
30

7

12

±100

−

100

4.0

0.52

−

−

−

−

− VDD 250V, ID=5.5Ans

− VGS=10Vns

− RL=45.5Ωns

− RG=10Ωns

−

− nC

− nC

Unit

nA V

V

µA

V

Ω

S
pF
pF
pF

nC

=±30V, VDS=0V

D

=1mA, VGS=0V

I

DS

=500V, VGS=0V

V
V

DS

=10V, ID=1mA

I

D

=5.5A, VGS=10V

DS

=10V, ID=5.5A

V
V

DS

=25V

GS

=0V

V
f=1MHz

V

DD

D

=11A

I

GS

=10V

V

L

=22.7Ω / RG=10Ω

R

Conditions

VnsIS= 11A, VGS=0V

= 11A, di/dt=100A/µs

I

1158555

F

250V

Data Sheet

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p

E

E

R5011FNX

zElectrical characteristic curves

Data Sheet

100

10

(A)

D

1

Operation in
this
area is limited

0.1

DRAIN CURRENT : I

Tc = 25°C
Single Pulse

0.01

0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS ( V )

Fig.1 Maximum Safe Operating Aera

100

VDS= 10V

Pulsed

10

(A)

D

DRAIN CURRENT : I

Ta= 125°C

1

Ta= 75°C
Ta= 25°C
Ta= -25°C

0.1

0.01

0.001

0.0 1.5 3.0 4.5 6.0

PW= 1ms

DC operation

PW= 100us

20

Ta= 25°C
Pulsed

15

(A)

D

10

5

DRAIN CURRENT: I

0

0 1020304050

6

(V)

5

GS(th)

4

3

2

1

0

GATE THRESHOLD V OLTAGE: V

-50 0 50 100 150

10V

8.0V

7.0V

6.5

DRAIN-SOURCE VOLTAGE: VDS (V)

Fig.2: Typical output characteristics(Ⅰ)

VDS= 10V

I

= 1mA

D

6.0V

5.5V

5.0V

VGS= 4.5V

10

Ta= 25°C
Pulsed

8

(A)

D

6

4

2

DRAIN CURRENT: I

0

10

(Ω)

1

DS(on)

0.1

RESISTANCE : R

0.01

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10 100

7.0V

6.5V

6.0V

012345

DRAIN-SOURCE VOLTAGE: VDS (V)

Fig.3: Typical output

VGS= 10V

Pulsed

8.0V

10V

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25° C

5.5V

5.0V

VGS= 4.5V

GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Typical Transfer Characteristics

1

0.9

0.8

0.7

(Ω)

0.6

DS(on)

0.5

0.4

ID= 5.5A

0.3

0.2

RESISTANCE : R

0.1

0

STATIC DRAIN-SOURCE ON-STAT

0 5 10 15

GATE-SOUR CE VOLTAGE : VGS (V)

Fig.7 Static Drain-Source On-State

Resistance vs. Gate Source

Ta=25°C
Pulsed

ID= 11.0A

CHANNEL TEMPERATURE: Tch (°C)

Fig.5 Gate Threshold Voltage

vs. Channel Temperature

1.4

VGS= 10V

1.2
Pulsed

) (Ω)

1

DS(on

0.8

0.6

0.4

RESISTANCE : R

0.2

STATIC DRAIN-SOURCE ON-STATE

0

-50 0 50 100 150

ID= 11.0A

CHANNEL TEMPERATURE: Tch (°C)

Fig.8 Static Drain-Source On-State

Resistance vs. Channel Tem

ID= 5.5A

erature

DRAIN CURRENT : ID (A)

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current

100

VDS= 10V

Pulsed

10

1

|Yfs| (S)

0.1

0.01

FORWARD TRANSFER ADMITTANCE :

0.01 0.1 1 10 100

DRAIN CURRENT : ID (A)

Fig.9 Forward Transfer Admittance

vs. Drain Current

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

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L

R5011FNX

Data Sheet

100

(A)

DR

VGS= 0V

Pulsed

10

1

0.1

REVERSE DRA IN CURRENT : I

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.10 Reverse Drain Current vs.

Sourse-Drain Voltage

1000

(ns)

rr

REVERSE RE COVERY TIME: t

Ta= 25°C
di/dt= 100A/µs

= 0V

V

GS

Pulsed

100

10

0.1 1 10 100

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

10000

1000

C

100

10

CAPACITANCE : C (pF)

1

0.01 0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS (V)

10000

1000

100

10

SWITCHING TIME : t (ns)

1

0.1 1 10 100

C

rss

Ta= 25° C
f= 1MHz

= 0V

V

GS

Fig.11 Typical Capacitance vs.

Drain-Source Voltage

t

f

t

d(off)

t

r

oss

t

d(on)

C

iss

Ta= 25°C
V

= 250V

DD

V

= 10V

GS

= 10Ω

R

G

Pulsed

15

(V)

GS

10

Ta= 25°C
V

5

GATE-S OURCE VOL TAGE : V

0

0 10203040

TOTAL GATE CHA RGE : Q

Fig.12 Dynamic Input Characteristics

DD

I

= 11.0A

D

R

G

Pulsed

= 250V

= 10Ω

(nC)

g

REVERSE DRA IN CURRENT : IDR (A)

Fig.13 Reverse Recovery Time

vs.Reverse Drain Current

10

Ta = 25°C
Single Pulse : 1Unit

1

Rth（ch-a）（t） = ｒ（t）×Rth（ch-a
Rth（ch-a） = 50.4°C/W

0.1

0.01

RESISTANCE : r (t)

0.001

NORMARIZED TRANSIENT THERMA

0.0001 0.001 0.01 0.1 1 10 100 1000

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

）

PULSE WIDTH : Pw(s)

DRAIN CURRENT : ID (A)

Fig.14 Switching　Characteristics

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R5011FNX

zSwitching characteristics measurement circuit

Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms

IG(Const.)

Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform

Fig.3-1 Avalanche measurement circuit Fig.3-2 Avalanche waveform

Data Sheet

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
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