ROHM R5009FNX Technical data

Data Sheet

(1) (3)(2)

10V Drive Nch MOSFET

R5009FNX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO-220FM

10.0

φ

3.2

4.5

2.8

Features

1)Fast reverse recovery time (t

2) Low on-resistance.

)

rr

15.0

14.0

3) Fast switching speed.

4) Gate-source voltage
　 V

garanteed to be ±30V .

GSS

5) Drive circuits can be simple.

6) Parallel use is easy.

 Application

Switching Inner circuit

 Packaging specifications

Type

R5009FNX 

Package Bulk
Basic ordering unit (pieces) 500

(1) Gate
(2) Drain
(3) Souce

 Absolute maximum ratings (Ta  25C)

Parameter

Drain-source voltage V
Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

Avalanche Current I

Avalanche Energy E

Symbol Limits Unit

*3

*1

*1

*2

*2

500 V

30 V

9A

36 A

9A

36 A

4.5 A

5.4 mJ

DSS

GSS

D

DP

S

SP

AS

AS

*3

Power dissipation (Tc=25℃)PD50 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 L 500μH, V

*3 Limited only by maximum temperature allowed.

=50V, Rg=25,starting Tch=25C

DD

12.0

8.02.5

1.3

(2)(3)(1)

1 Body Diode

*

1.2

0.8

2.54 2.62.54

0.75

∗1

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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2011.07 - Rev.A

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Data Sheet

R5009FNX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=±30V, VDS=0V

500 - - V ID=1mA, VGS=0V

- - 100 uA VDS=500V, VGS=0V

2.0 - 4.0 V VDS=10V, ID=1mA

*

- 0.65 0.84

*

l 4.0 5.7 - S ID=4.5A, VDS=10V

- 630 - pF VDS=25V

- 400 - pF VGS=0V

- 25 - pF f=1MHz

- 24 - ns ID=4.5A, VDD 250V

*

- 20 - ns VGS=10V

*

- 50 - ns RL=55.6

*

*

- 40 - ns RG=10

*

- 18 - nC ID=9.0A, VDD 250V

*

- 3.5 - nC VGS=10V

- 5.5 - nC

*

ID=4.5A, VGS=10V



Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward Voltage V

Reverse Recovery Time t

*Pulsed

SD

rr

*

- - 1.5 V Is=9.0A, VGS=0V

48 78 108 ns

ConditionsParameter

Is=9.0A, di/dt=100A/s

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2011.07 - Rev.A

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Data Sheet

R5009FNX

Electrical characteristics curves

15

VGS= 8.0V

VGS= 7.0V

VGS= 6.5V

[A]

D

10

5

DRAIN CURRENT : I

0

02040

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)

100

(V)

GS(th)

GATE THRESHOLD VOLTAGE: V

VDS= 10V

ID=1mA

10

1

0.1

-50 0 50 100 150

VGS= 10V

CHANNEL TEMPERATURE: Tch (℃)

Fig.4 Gate Threshold Voltage
vs. Channel Temperature

Ta=25°C

Pulsed

VGS= 6.0V

VGS= 5.5V

VGS= 5.0V

VGS= 4.5V

8

VGS= 8.0V

7

VGS= 7.0V

[A]

D

6

VGS= 6.5V

5

VGS= 6.0V

4

Ta=25°C

Pulsed

3

2

DRAIN CURRENT : I

1

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

DRAIN-SOURCE VOLTAGE : VDS[V]

10

Ta= 25°C

Pulsed

)[Ω]

on

(

DS

1

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0.1

0.1 1 10 100

DRAIN-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current

VGS= 10V

VGS= 5.5V

VGS= 5.0V

VGS= 4.5V

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta=  25°C

100

VDS= 10V

Pulsed

10

[A]

Ta= 125°C

D

Ta= 75°C

1

Ta= 25°C

Ta=  25°C

0.1

DRAIN CURRENT : I

0.01

0.001

01234567

GATE-SOURCE VOLTAGE : VGS[V]

Fig.3 Typical Transfer Characteristics

2

Ta= 25°C

Pulsed

1.5

[Ω]

RDS(ON)

1

0.5

RESISTANCE :

STATIC DRAIN-SOURCE ON-STATE

ID= 4.5A

0

0 5 10 15

GATE-SOURCE VOLTAGE : VGS (V)

Fig.6 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

ID= 9A

2

VGS= 10V

Pulsed

1.5

[Ω]

RDS(ON)

1

0.5

RESISTANCE :

STATIC DRAIN-SOURCE ON-STATE

0

ID= 9A

ID= 4.5A

-50 0 50 100 150

CHANNEL TEMPERATURE: Tch (℃)

Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature

100

VDS= 10V

Pulsed

10

1

0.1

0.01

0.01 0.1 1 10 100

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

Fig.8 Forward Transfer Admittance
vs. Drain Current

3/5

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta=  25°C

100

VGS=0V

Pulsed

10

1

0.1

SOURCE CURRENT : Is [A]

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta=  25°C

2011.07 - Rev.A

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Data Sheet

R5009FNX

(

)

1000

100

REVERSE RECOVERY TIME : trr[ns]

10

0.1 1 10 100

SOURCE-CURRENT : IS[V]

Fig.10 Reverse Recovery Time vs. Source Current

10000

1000

100

C

rss

Ta=25°C

10

CAPACITANCE : C [pF]

f=1MHz
VGS=0V

C

oss

1

0.01 0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

Ta=25°C

Pulsed

10000

1000

t

f

Ta=25°C

VDD=250V

VGS=10V

RG=10Ω

t

d(off)

12

[V]

GS

10

8

Pulsed

100

t

d(on)

SWITCHING TIME : t [ns]

10

t

1

r

0.01 0.1 1 10 100

DRAIN-CURRENT : ID[A]

Fig.11 Switching Characteristics

1000

Operation in this area is limited by R

C

iss

(VGS=10V)

100

(A)

D

10

1

0.1

DRAIN CURRENT : I

Ta = 25°C

Single Pulse

DS(ON)

PW=100us

PW=1ms

PW =10ms

6

4

2

GATE-SOURCE VOLTAGE : V

0

0 5 10 15 20 25 30

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C

VDD=250V

ID= 9A

Pulsed

0.01

0.1 1 10 100 1000 10000

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.14 Maximum Safe Operating Aera

10

t

1

0.1

Ta = 25°C

0.01

　RESISTANCE : r

0.001

NORMARIZED TRANSIENT THERMAL

0.0001 0.001 0.01 0.1 1 10 100 1000

Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 44.7 °C/W

PULSE WIDTH : Pw(s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

4/5

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Data Sheet

R5009FNX

S

V

S

S

%

V
V

V

S

 Measurement circuits

V

GS

R

G

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

Fig.2-1 Gate Charge Measurement Circuit

V

GS

R

G

D.U.T.

D.U.T.

D.U.T.

I

AS

D

I

I

V

D

R

L

V

DD

D

VD

RL

VDD

V

D

L

DD

V

Pulse width

50%

10%

GS
DS

10% 10%

90%

90% 90

t

d(on)

t

on

t

d(off)

t

r

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

I

AS

DD

V

1

L

E

AS

=

I

2

(BR)DSS

2

AS

V

(BR)DSS

- V

t

50%

off

DD

V

t

f

(BR)DS

Fig.3-1 Avalanche Measurement Circuit

Fig.3-2 Avalanche Waveform

5/5

2011.07 - Rev.A

Notes

Notice

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