ROHM R5009FNX Technical data

Data Sheet

(1) (3)(2)

10V Drive Nch MOSFET

R5009FNX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO-220FM

10.0

φ

3.2

4.5

2.8

Features

1)Fast reverse recovery time (t

2) Low on-resistance.

)

rr

15.0

14.0

3) Fast switching speed.

4) Gate-source voltage
　 V

garanteed to be ±30V .

GSS

5) Drive circuits can be simple.

6) Parallel use is easy.

 Application

Switching Inner circuit

 Packaging specifications

Type

R5009FNX 

Package Bulk
Basic ordering unit (pieces) 500

(1) Gate
(2) Drain
(3) Souce

 Absolute maximum ratings (Ta  25C)

Parameter

Drain-source voltage V
Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

Avalanche Current I

Avalanche Energy E

Symbol Limits Unit

*3

*1

*1

*2

*2

500 V

30 V

9A

36 A

9A

36 A

4.5 A

5.4 mJ

DSS

GSS

D

DP

S

SP

AS

AS

*3

Power dissipation (Tc=25℃)PD50 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 L 500μH, V

*3 Limited only by maximum temperature allowed.

=50V, Rg=25,starting Tch=25C

DD

12.0

8.02.5

1.3

(2)(3)(1)

1 Body Diode

*

1.2

0.8

2.54 2.62.54

0.75

∗1

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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2011.07 - Rev.A

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Data Sheet

R5009FNX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=±30V, VDS=0V

500 - - V ID=1mA, VGS=0V

- - 100 uA VDS=500V, VGS=0V

2.0 - 4.0 V VDS=10V, ID=1mA

*

- 0.65 0.84

*

l 4.0 5.7 - S ID=4.5A, VDS=10V

- 630 - pF VDS=25V

- 400 - pF VGS=0V

- 25 - pF f=1MHz

- 24 - ns ID=4.5A, VDD 250V

*

- 20 - ns VGS=10V

*

- 50 - ns RL=55.6

*

*

- 40 - ns RG=10

*

- 18 - nC ID=9.0A, VDD 250V

*

- 3.5 - nC VGS=10V

- 5.5 - nC

*

ID=4.5A, VGS=10V



Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward Voltage V

Reverse Recovery Time t

*Pulsed

SD

rr

*

- - 1.5 V Is=9.0A, VGS=0V

48 78 108 ns

ConditionsParameter

Is=9.0A, di/dt=100A/s

2/5

2011.07 - Rev.A