ROHM R5009ANJ Technical data

A

g

C

10V Drive Nch MOSFET

R5009ANJ

zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V

GSS) guaranteed to be ±30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

zApplications zInner circuit

Switching

zPackaging specifications

Package Code

Type

Basic ordering unit (pieces)

R5009ANJ

Tapin

TL

1000

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current

Source current (Body Diode)

Continuous Pulsed Continuous

Pulsed Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, V ∗3 Limited only by maximum tempterature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

SP

I

AS

I

AS

E

P

D

Tch

Tstg °C

∗3 ∗1

∗1

∗2

−55 to +150

Limits

500

30

±9

±36

9

36

4.5

5.4 50

150

Unit

V V A A A A A

mJ

W

°C

zThermal resistance

Parameter

hannel to case 2.5

Symbol Limits Unit

Rth(ch-c)

LPTS

(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source)

(1) (2) (3)

(1) Gate (2) Drain (3) Source

°C/W

10.1

9.0

13.1

1.24

1.0

3.0

2.54

0.78

5.08

(1) (2) (3)

∗1

∗1 Body Diode

4.5

1.3

0.4

1.2

2.7

Each lead has same dimensions

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R5009ANJ

zElectrical characteristics (Ta=25°C)

Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time

Symbol

I

V

(BR)DSS

I

V

R

| Y

C C C t

Rise time Turn-off delay time

t

Fall time Total gate charge Gate-source charge Gate-drain charge

∗ Pulsed

Q Q

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

∗

V

SD

Min.

GSS

−

500

DSS

GS(th)

DS(on)

oss

rss

d(on)

t

d(off)

t

Q

−

2.5

∗

−

∗

fs

|

2.5

iss

−

∗

−

∗

r

−

∗

−

∗

f

−

∗

g

−

∗

gs

−

∗

gd

−

Min. Typ. Max.

−−1.5 V IS= 9A, VGS=0VForward voltage

Max. Unit Conditions

Typ.

GS

−

0.55

−

650 400

30 30 20 62 28 21

5 9

±100

100

0.72

4.5

nA V

V

−

µA

V

Ω

S

−

pF

−

pF

−

pF

−

− ns

− VGS=10Vns

− RL=55.6Ωns

− RG=10Ωns

nC

− V

− nC

Unit

=±30V, VDS=0V

D

=1mA, VGS=0V

I

DS

=500V, VGS=0V

V

DS

=10V, ID=1mA

V

D

=4.5A, VGS=10V

I I

D

=4.5A, VDS=10V

V

DS

=25V

GS

=0V

V f=1MHz

D

=4.5A, VDD 250V

I

DD

D

=9A

I

GS

=10V

V

L

=27.8Ω / RG=10Ω

R

Conditions

250V

Data Sheet

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A

V

V10V

A

E

R5009ANJ

zElectrical characteristics curves

100

Operat ion in th is area is limit ed by R

10

(A)

D

DRAIN CURRENT : I

DS(ON)

1

0.1 Ta = 25°C Single Pulse

0.01

0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS ( V )

Fig.1 Maximum Safe Operating Area

DC operation

PW=100us

PW=1ms

15

Ta= 25°C Pulsed

(A)

D

10

5

DRAIN CURRENT: I

0

0 1020304050

DRAIN-SOURCE VOLTAGE: VDS (V)

Fig.2 Typical Output Characteristics(Ⅰ)

7.0V

6.0V

8.0V

5.5V

5.0V

VGS= 4.5V

10V

6.5V

(A)

D

DRAIN CURRENT: I

Data Sheet

10

Ta= 25°C Pulsed

8

6

4

2

0

012345

Fig.3 Typical Output Characteristics(Ⅱ)

6.5

6.0

DRAIN-SOURCE VOLTAGE: VDS (V)

7.0

VGS= 4.5

8.0

5.5

5.0

100

VDS= 10V Pulsed

10

(A)

D

Ta= 125°C Ta= 75°C

1

Ta= 25°C Ta= -25°C

0.1

0.01

DRAIN CURRENT : I

0.001

0.0 1.5 3.0 4.5 6. 0

GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Typical Transfer Characteristics

2

1.5

(Ω)

DS(on)

1

ID= 4.5

0.5

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STAT

0

0 5 10 15

GATE-SOURCE VOLTAGE : VGS (V)

Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage

ID= 9.0

Ta=25° C Pulsed

6

(V)

5

GS(th)

4

3

2

1

0

GATE THRESHOLD VOLTAGE: V

-50 0 50 100 150

2

VGS= 10V

(Ω)

1.5

Pulsed

DS(on)

1

0.5

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

-50 0 50 100 150

Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature

VDS= 10V

= 1mA

I

D

CHANNEL TEMPERATURE: Tch (°C)

Fig.5 Gate Threshold Voltage vs. Channel Temperature

ID= 9.0

CHANNEL TEMPERATURE: Tch (°C)

ID= 4.5

10

VGS= 10V Pulsed

(Ω)

DS(on)

1

RESISTANCE : R

0.1

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10 100

DRAIN CURRENT : ID (A)

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

100

VDS= 10V Pulsed

10

1

|Yfs| (S)

0.1

0.01

FORWARD TRANSFER ADMITTANCE :

0.01 0.1 1 10

DRAIN CURRENT : ID (A)

Fig.9 Forward Transfer Admittance vs. Drain Current

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

Ta= -25° C Ta= 25°C Ta= 75°C Ta= 125°C

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100

(A)

VGS= 0V

DR

Pulsed

10

1

Ta= 125°C

0.1

REVERSE DRAIN CURRENT : I

0.01

00.511.5

Ta= 75°C Ta= 25°C

Ta= -25°C

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage

10000

1000

C

100

10

CAPACITANCE : C (pF)

Ta= 25°C f= 1MHz

= 0V

V

GS

1

0.1 1 10 100 1000

rss

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.11 Typical Capacitance vs. Drain-Source Voltage

C

iss

C

oss

(V)

GATE-SOURCE VOLTAGE : V

15

GS

10

Data Sheet

Ta= 25°C

= 250V

V

DD

= 9A

I

D

= 10Ω

R

G

Pulsed

5

0

0 5 10 15 20 25 30

TOTAL GA TE C HA RGE : Q

Fig.12 Dynamic Input Characteristics

(nC)

g

1000

(ns)

rr

100

Ta= 25°C di / dt = 100A / µs V

GS

REVERSE RECOVERY TIME: t

10

0.1 1 10 100

Pulsed

REVERSE DRAIN CURRENT : IDR (A)

Fig.13 Reverse Recovery Time vs.Reverse Drain Current

1

Ta = 25°C Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a

0.1 Rth（ch-a） = 42.4°C/W

0.01

= 0V

10000

Ta= 25° C

= 250V

V

1000

100

10

SWITCHING TIME : t (ns)

1

0.1 1 10 100

t

f

t

d(off)

t

r

DD

= 10V

V

GS

= 10Ω

R

G

Pulsed

t

d(on)

DRAIN CURRENT : ID (A)

Fig.14 Switching Characteris tics

）

0.001

RESISTANCE : r (t)

0.0001

NORMARIZED TRANSIENT THERMAL

0.0001 0.001 0.01 0.1 1 10 100 1000

Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth

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PULSE WIDTH : Pw(s)

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zSwitching characteristics measurement circuit

Data Sheet

Fig.1-1 Switching time measurement circuit

IG

Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform

Fig.1-2 Switching waveforms

Fig.3-1 Avalanche measurement circuit Fig.3-2 Avalanche waveform

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Appendix

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upon request.

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standard usage and operations of the Products. The peripheral conditions must be taken into account

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sponsibility for such damage.

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Appendix-Rev4.0

ROHM R5009ANJ Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual