ROHM R5009ANJ Technical data
A
g
C
10V Drive Nch MOSFET
R5009ANJ
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications zInner circuit
Switching
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
R5009ANJ
Tapin
TL
1000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum tempterature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
∗3
∗1
∗1
∗2
∗2
−55 to +150
Limits
500
30
±9
±36
9
36
4.5
5.4
50
150
Unit
V
V
A
A
A
A
A
mJ
W
°C
zThermal resistance
Parameter
hannel to case 2.5
Symbol Limits Unit
Rth(ch-c)
LPTS
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
°C/W
10.1
9.0
13.1
1.24
1.0
3.0
2.54
0.78
5.08
(1) (2) (3)
∗1
∗1 Body Diode
4.5
1.3
0.4
1.2
2.7
Each lead has same dimensions
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.02 - Rev.
A
R5009ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Symbol
I
V
(BR)DSS
I
V
R
| Y
C
C
C
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Q
Q
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
∗
V
SD
Min.
GSS
−
500
DSS
GS(th)
DS(on)
oss
rss
d(on)
t
d(off)
t
Q
−
2.5
∗
−
∗
fs
|
2.5
iss
−
−
−
∗
−
∗
r
−
∗
−
∗
f
−
∗
g
−
∗
gs
−
∗
gd
−
Min. Typ. Max.
−−1.5 V IS= 9A, VGS=0VForward voltage
Max. Unit Conditions
Typ.
GS
−
−
−
−
0.55
−
650
400
30
30
20
62
28
21
5
9
±100
100
0.72
4.5
nA V
V
−
µA
V
Ω
S
−
pF
−
pF
−
pF
−
− ns
− VGS=10Vns
− RL=55.6Ωns
− RG=10Ωns
nC
− V
− nC
− nC
Unit
=±30V, VDS=0V
D
=1mA, VGS=0V
I
DS
=500V, VGS=0V
V
DS
=10V, ID=1mA
V
D
=4.5A, VGS=10V
I
I
D
=4.5A, VDS=10V
V
DS
=25V
GS
=0V
V
f=1MHz
D
=4.5A, VDD 250V
I
DD
D
=9A
I
GS
=10V
V
L
=27.8Ω / RG=10Ω
R
Conditions
250V
Data Sheet
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.02 - Rev.
Loading...