ROHM R5007ANX Technical data
C
10V Drive Nch MOSFET
R5007ANX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS) guaranteed to be 30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications
Switching
Packaging specifications Inner circuit
Package
Code
Basic ordering unit (pieces)
Type
R5007ANX
Bulk
−
500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum tempterature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
±30
±7
±28
7
28
3.5
3.2
40
150
Unit
V
V
A
A
A
A
A
mJ
W
°C
Thermal resistance
Parameter
hannel to case 3.13
Symbol Limits Unit
Rth(ch-c)
°C/W
TO-220FM
15.0
12.0
14.0
(1)Base
(2)Collector
(3)Emitter
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
10.0
8.02.5
1.3
(2)(3)(1)
∗1
∗1 Body Diode
φ
3.2
4.5
2.8
1.2
0.8
2.54 2.62.54
0.75
www.rohm.com
1/5
c
○
2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.B
Electrical characteristics (Ta=25C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Symbol
I
V
(BR)DSS
I
V
R
| Y
C
C
C
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Q
Q
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Symbol
∗ Pulsed
∗
V
SD
Min.
GSS
−
500
DSS
GS(th)
DS(on)
oss
rss
d(on)
t
d(off)
t
Q
−
2.5
∗
−
∗
fs
|
2.5
iss
−
−
−
∗
−
∗
r
−
∗
−
∗
f
−
∗
g
−
∗
gs
−
∗
gd
−
Min. Typ. Max.
−−1.5 V IS= 7A, VGS=0VForward voltage
Typ.
−
−
−
−
0.8
−
500
300
23
20
22
50
25
13
3.5
5.5
Max. Unit Conditions
GS
±100
−
100
4.5
1.05
−
−
−
−
− ns
nA V
V
μA
V
Ω
S
pF
pF
pF
=±30V, VDS=0V
D
=1mA, VGS=0V
I
DS
=500V, VGS=0V
V
DS
=10V, ID=1mA
V
D
=3.5A, VGS=10V
I
I
D
=3.5A, VDS=10V
V
DS
=25V
GS
=0V
V
f=1MHz
D
=3.5A, VDD 250V
I
− VGS=10Vns
− RL=71.4Ωns
− RG=10Ωns
nC
− V
− nC
− nC
Unit
DD
250V
D
=7A
I
GS
=10V
V
L
=35.7Ω / RG=10Ω
R
Conditions
Data Sheet R5007ANX
www.rohm.com
2/5
c
○
2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.B
Loading...