ROHM R5007ANX Technical data

C

10V Drive Nch MOSFET

R5007ANX

Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V

GSS) guaranteed to be 30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

Applications

Switching

Packaging specifications Inner circuit

Package
Code
Basic ordering unit (pieces)

Type
R5007ANX

Bulk

−

500

Absolute maximum ratings (Ta=25C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Continuous
Pulsed
Continuous

Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum tempterature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

SP

I

AS

I

AS

E

P

D

Tch

Tstg °C

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

500

±30

±7

±28

7

28

3.5

3.2
40

150

Unit

V
V
A
A
A
A
A

mJ

W

°C

Thermal resistance

Parameter

hannel to case 3.13

Symbol Limits Unit

Rth(ch-c)

°C/W

TO-220FM

15.0

12.0

14.0

(1)Base
(2)Collector
(3)Emitter

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

10.0

8.02.5

1.3

(2)(3)(1)

∗1

∗1 Body Diode

φ

3.2

4.5

2.8

1.2

0.8

2.54 2.62.54

0.75

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Electrical characteristics (Ta=25C)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

Symbol

I

V

(BR)DSS

I

V

R

| Y

C
C
C
t

Rise time
Turn-off delay time

t

Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Q
Q

Body diode characteristics (Source-drain) (Ta=25C)

Parameter Symbol

∗ Pulsed

∗

V

SD

Min.

GSS

−

500

DSS

GS(th)

DS(on)

oss

rss

d(on)

t

d(off)

t

Q

−

2.5

∗

−

∗

fs

|

2.5

iss

−

−

−

∗

−

∗

r

−

∗

−

∗

f

−

∗

g

−

∗

gs

−

∗

gd

−

Min. Typ. Max.

−−1.5 V IS= 7A, VGS=0VForward voltage

Typ.

−

−

−

−

0.8

−

500
300

23
20
22
50
25
13

3.5

5.5

Max. Unit Conditions

GS

±100

−

100

4.5

1.05

−

−

−

−

− ns

nA V

V

μA

V

Ω

S
pF
pF
pF

=±30V, VDS=0V

D

=1mA, VGS=0V

I

DS

=500V, VGS=0V

V

DS

=10V, ID=1mA

V

D

=3.5A, VGS=10V

I
I

D

=3.5A, VDS=10V

V

DS

=25V

GS

=0V

V
f=1MHz

D

=3.5A, VDD 250V

I

− VGS=10Vns

− RL=71.4Ωns

− RG=10Ωns

nC

− V

− nC

− nC

Unit

DD

250V

D

=7A

I

GS

=10V

V

L

=35.7Ω / RG=10Ω

R

Conditions

Data Sheet R5007ANX

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2010.01 - Rev.B

V

V

V

V

V

V10V

V

V

E

E

Electrical characteristic curves

Data Sheet R5007ANX

100

Operation in this
area is limited

10

by R

(A)

D

DS(ON)

1

DC operation

0.1

DRAIN CURRENT : I

Ta = 25 °C
Single Pulse

0.01

0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : V

Fig.1 Maximum Safe Operating Aera

100

VDS= 10V

Pulsed

10

(A)

D

Ta= 125°C
Ta= 75 °C

1

Ta= 25 °C
Ta= -25°C

0.1

0.01

DRAIN CURRENT : I

0.001

0.01.53.04.56.0

GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Typical Transfer Characteristics

PW=100us

PW=1ms

10

8.0

7.0

8

(A)

D

6

6.5

5.5

Ta= 25 °C
Pulsed

6.0

4

2

DRAIN CURRENT: I

5.0

VGS= 4.5

0

0 1020304050

( V )

DS

DRAIN-SOURCE VOLTAGE: VDS (V)

Fig.2: Typical Output Characteristics(Ⅰ)

6

(V)

VDS= 10V

I

= 1mA

5

GS(th)

D

4

3

2

1

0

GATE THRESHOLD VOLTAGE: V

-50 0 50 100 150

CHANNEL TEMPERATURE: Tch (°C)

Fig.5 Gate Threshold Voltage
vs. Channel

5

Ta= 25 °C
Pulsed

4

(A)

D

10

8.0

7.0

3

6.0

2

1

DRAIN CURRENT: I

5.0

VGS= 4.5

0

012345

DRAIN-SOURCE VOLTAGE: VDS (V)

Fig.3: Typical Output Characteristics(Ⅱ)

10

VGS= 10V

Pulsed

(Ω)

DS(on)

1

RESISTANCE : R

0.1

STATIC DRAIN-SOURCE ON-STAT

0.1 1 10 100

DRAIN CURRENT : ID (A)

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current

5.56.5

Ta= 125°C
Ta= 7 5° C
Ta= 2 5° C
Ta= - 25°C

3

Ta=25°C

2.5

(Ω)

2

DS(on)

1.5

1

0.5

RESISTANCE : R

0

STATIC DRAIN-SOURCE ON-STAT

ID= 3.5A

Pulsed

ID= 7.0A

051015

GATE-SOURCE VOLTAGE : VGS (V)

Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source

3

VGS= 10V

Pulsed

2.5

) (Ω)

2

DS(on

1.5

ID= 7A

1

RESISTANCE : R

0.5

STATIC DRAIN-SOURCE ON-STATE

0

-50 0 50 100 150

CHANNEL TEMPERATURE: Tch (°C)

Fig.8 Static Drain-Source On-State

Resistance vs. Channel

I

= 3.5A

100

VDS= 10V

Pulsed

10

1

|Yfs| (S)

0.1

0.01

FORWARD TRANSFER ADMITTANCE :

0.01 0.1 1 10 100

Ta= - 25°C
Ta= 2 5° C
Ta= 7 5° C
Ta= 1 25 °C

DRAIN CURRENT : ID (A)

Fig.9 Forward Transfer Admittance
vs. Drain Current

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L

Data Sheet R5007ANX

100

VGS= 0V

(A)

DR

Pulsed

10

1

Ta= 125°C

0.1

REVERSE DRA IN CURRENT : I

0.01

Ta= 7 5° C
Ta= 2 5° C

Ta= - 25°C

00.511.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage

1000

(ns)

rr

100

Ta= 2 5° C
di / dt= 100A / μs
V

= 0V

GS

REVERSE RECOVERY TIME: t

10

Pulsed

0.1 1 10 100

REVERSE DRAIN CURRENT : IDR (A)

Fig.13 Reverse Recovery Time
vs.Reverse Drain Current

10000

1000

100

10

1

Ta= 25°C
f= 1MHz
V

= 0V

GS

CAPACITANCE : C (pF)

C

0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.11 Typical Capacitance vs.
Drain-Source Voltage

10000

t

1000

100

t

d(off)

f

10

SWITCHING TIME : t (ns)

t

r

1

0.01 0.1 1 10 100

DRAIN CURRENT : ID (A)

Fig.14 Switc hing　Characterist ics

C

Ta= 25 °C
V

= 250V

DD

V

= 10V

GS

= 10Ω

R

G

Pulsed

t

d(on)

15

Ta= 25°C

(V)

GS

iss

C

oss

= 250V

V

DD

= 7A

I

D

= 10Ω

R

10

G

Pulsed

5

GATE-S OURCE V OLTAGE : V

0

0 5 10 15 20 25

TOTAL GA TE C HA RG E : Q

(nC)

g

Fig.12 Dynamic Input Characteristi cs

10

Ta = 25°C

1

Single Pulse : 1Uni t
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a
Rth（ch-a） = 54.3°C/W

0.1

）

0.01

RESISTANCE : r (t)

0.001

0.0001

NORMARIZED TRANSIENT THERMA

0.0001 0.001 0.01 0.1 1 10 100 1000

PULSE WIDTH : Pw(s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth

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Switching characteristics measurement circuit

Fig.1 Switching time measurement circuit Fig.2 Switching waveforms

IG(Const.)

Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform

Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform

Data Sheet R5007ANX

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R1010

A