ROHM R5005CNX Technical data
C
10V Drive Nch MOSFET
R5005CNX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
GSS) guaranteed to be 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
Applications Inner circuit
Switching
Packaging specifications
Package
Type
Basic ordering unit (pieces) 500pcs
Bulk
Absolute maximum ratings (Ta=25C)
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
±30
±5
±20
5
20
2.5
1.6
40
150
Unit
V
V
A
A
A
A
A
mJ
W
°C
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum temperature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
SP
I
AS
I
AS
E
P
D
Tch
Tstg °C
Thermal resistance
Parameter
hannel to case 3.13
Symbol Limits Unit
Rth(ch-c)
TO-220FM
(1)Base
(2)Collector
(3)Emitter
∗2
(1) (2) (3)
∗1 Body Diode
∗2 ESD Protection Diode
°C/W
10.0
15.0
12.0
8.02.5
1.3
14.0
(2)(3)(1)
∗1
φ
3.2
1.2
0.8
2.54 2.62.54
(1) Gate
(2) Drain
(3) Source
4.5
2.8
0.75
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2012 ROHM Co., Ltd. All rights reserved.
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2012.05 - Rev.B
R5005CNX
Electrical characteristics (Ta=25C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
I
(BR)DSS
I
V
R
| Y
C
C
t
t
Q
GSS
DSS
GS(th)
DS(on)
fs |
C
iss
oss
rss
d(on)
t
r
d(off)
t
f
Q
g
Q
gs
gd
Min.
−
500
−
2.5
∗
−
∗
1.5
−
−
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
∗
V
SD
−−1.5 V IS= 5A, VGS=0VForward voltage
Max. Unit Conditions
Typ.
GS
−
−
−
−
1.3
−
320
180
15
20
25
40
20
10.8
3.2
4.4
±10
100
−
4.5
1.6
−
−
−
−
μAV
V
μA
V
Ω
S
pF
pF
pF
− ns
− VGS=10Vns
− RL=100Ωns
− RG=10Ωns
nC
− V
− nC
− nC
Unit
=±30V, VDS=0V
D
=1mA, VGS=0V
I
DS
=500V, VGS=0V
V
DS
=10V, ID=1mA
V
I
D
=2.5A, VGS=10V
D
=2.5A, VDS=10V
I
V
DS
=25V
GS
=0V
V
f=1MHz
I
D
=2.5A, VDD 250V
DD
D
=5A
I
GS
=10V
V
L
=50Ω / RG=10Ω
R
Conditions
250V
Data Sheet
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c
○
2012 ROHM Co., Ltd. All rights reserved.
2/3
2012.05 - Rev.B
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