ROHM R5005CNX Technical data

C

10V Drive Nch MOSFET

R5005CNX

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

GSS) guaranteed to be 30V.

4) Drive circuits can be simple.

5) Parallel use is easy.

Applications Inner circuit

Switching

Packaging specifications

Package

Type

Basic ordering unit (pieces) 500pcs

Bulk

Absolute maximum ratings (Ta=25C)

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

500

±30

±5

±20

5

20

2.5

1.6
40

150

Unit

V
V
A
A
A
A
A

mJ

W
°C

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Continuous
Pulsed
Continuous

Pulsed
Avalanche current
Avalanche energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, V
∗3 Limited only by maximum temperature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

SP

I

AS

I

AS

E

P

D

Tch

Tstg °C

Thermal resistance

Parameter

hannel to case 3.13

Symbol Limits Unit

Rth(ch-c)

TO-220FM

(1)Base
(2)Collector
(3)Emitter

∗2

(1) (2) (3)

∗1 Body Diode
∗2 ESD Protection Diode

°C/W

10.0

15.0

12.0

8.02.5

1.3

14.0

(2)(3)(1)

∗1

φ

3.2

1.2

0.8

2.54 2.62.54

(1) Gate
(2) Drain
(3) Source

4.5

2.8

0.75

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2012 ROHM Co., Ltd. All rights reserved.

1/3

2012.05 - Rev.B

R5005CNX

Electrical characteristics (Ta=25C)

Parameter

Symbol
Gate-source leakage
Drain-source breakdown voltage

V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

I

(BR)DSS

I

V

R

| Y

C
C
t

t

Q

GSS

DSS

GS(th)

DS(on)

fs |

C

iss

oss

rss

d(on)

t

r

d(off)

t

f

Q

g

Q

gs

gd

Min.

−

500

−

2.5

∗

−

∗

1.5

−

−

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

Body diode characteristics (Source-drain) (Ta=25C)

Parameter Symbol

∗ Pulsed

Min. Typ. Max.

∗

V

SD

−−1.5 V IS= 5A, VGS=0VForward voltage

Max. Unit Conditions

Typ.

GS

−

−

−

−

1.3

−

320
180

15
20
25
40
20

10.8

3.2

4.4

±10

100

−

4.5

1.6

−

−

−

−

μAV

V

μA

V

Ω

S
pF
pF
pF

− ns

− VGS=10Vns

− RL=100Ωns

− RG=10Ωns

nC

− V

− nC

− nC

Unit

=±30V, VDS=0V

D

=1mA, VGS=0V

I

DS

=500V, VGS=0V

V

DS

=10V, ID=1mA

V
I

D

=2.5A, VGS=10V

D

=2.5A, VDS=10V

I
V

DS

=25V

GS

=0V

V
f=1MHz
I

D

=2.5A, VDD 250V

DD

D

=5A

I

GS

=10V

V

L

=50Ω / RG=10Ω

R

Conditions

250V

Data Sheet

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2012 ROHM Co., Ltd. All rights reserved.

2/3

2012.05 - Rev.B

R5005CNX

Measurement circuit

Fig.1 Switching time measurement circuit Fig.2 Switching waveforms

IG(Const.)

Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform

Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform

Data Sheet

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2012 ROHM Co., Ltd. All rights reserved.

3/3

2012.05 - Rev.B

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1120A