ROHM R5005CNJ Technical data
Data Sheet
10V Drive Nch MOSFET
R5005CNJ
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
9.0
13.1
1.0
3.0
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 1000
R5005CNJ
(1) Gate
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.
=25C
*4 T
C
=50V, RG=25, Tch=25C
DD
E
DSS
GSS
*3
D
*1
DP
*3
S
*1
SP
I
*2
AS
*2
AS
*4
D
ch
55 to 150 C
stg
500 V
30 V
5A
20 A
5A
20 A
2.5 A
1.6 mJ
40 W
150 C
(2) Drain
(3) Source
1.24
2.54
5.08
(1) (2) (3)
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
0.4
0.78
2.7
∗1
∗2
1.2
Thermal resistance
Parameter
Channel to Case R
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© 2011 ROHM Co., Ltd. All rights reserved.
Symbol Limits Unit
th (ch-c)
3.125 C / W
1/5
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R5005CNJ
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=25V, VDS=0V
500 - - V ID=1mA, VGS=0V
- - 100 AVDS=500V, VGS=0V
2.5 - 4.5 V VDS=10V, ID=1mA
- 1.3
*
*
l 1.5 2.7 - S VDS=10V, ID=2.5A
1.6
- 320 - pF VDS=25V
- 180 - pF VGS=0V
- 15 - pF f=1MHz
- 20 - ns VDD 250V, ID=2.5A
*
- 25 - ns VGS=10V
*
- 40 - ns RL=100
*
- 20 - ns RG=10
*
- 10.8 - nC VDD 250V
*
- 3.2 - nC ID=5.0A
*
- 4.4 - nC VGS=10V
*
ID=2.5A, VGS=10V
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V IS=5.0A, VGS=0V
2/5
2011.10 - Rev.A
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