Data Sheet
10V Drive Nch MOSFET
R5005CNJ
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
9.0
13.1
1.0
3.0
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 1000
R5005CNJ
(1) Gate
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.
=25C
*4 T
C
=50V, RG=25, Tch=25C
DD
E
DSS
GSS
*3
D
*1
DP
*3
S
*1
SP
I
*2
AS
*2
AS
*4
D
ch
55 to 150 C
stg
500 V
30 V
5A
20 A
5A
20 A
2.5 A
1.6 mJ
40 W
150 C
(2) Drain
(3) Source
1.24
2.54
5.08
(1) (2) (3)
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
0.4
0.78
2.7
∗1
∗2
1.2
Thermal resistance
Parameter
Channel to Case R
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Symbol Limits Unit
th (ch-c)
3.125 C / W
1/5
2011.10 - Rev.A
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Data Sheet
R5005CNJ
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=25V, VDS=0V
500 - - V ID=1mA, VGS=0V
- - 100 AVDS=500V, VGS=0V
2.5 - 4.5 V VDS=10V, ID=1mA
- 1.3
*
*
l 1.5 2.7 - S VDS=10V, ID=2.5A
1.6
- 320 - pF VDS=25V
- 180 - pF VGS=0V
- 15 - pF f=1MHz
- 20 - ns VDD 250V, ID=2.5A
*
- 25 - ns VGS=10V
*
- 40 - ns RL=100
*
- 20 - ns RG=10
*
- 10.8 - nC VDD 250V
*
- 3.2 - nC ID=5.0A
*
- 4.4 - nC VGS=10V
*
ID=2.5A, VGS=10V
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V IS=5.0A, VGS=0V
2/5
2011.10 - Rev.A
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Data Sheet
R5005CNJ
Electrical characteristic curves
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
Ta=25℃
pulsed
VGS=10.0V
VGS=6.0V
VGS=7.0V
VGS=4.5V
VGS=5.0V
VGS=8.0V
VGS=6.5V
VGS=7.5V
VGS=9.0V
0.001
0.01
0.1
1
10
0 1 2 3 4 5 6 7
VDS= 10V
Pulsed
T
a
=125
℃
Ta= 75
℃
Ta= 25
℃
T
a
= -25
℃
Fig.3 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : I
D
(A)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
0
1
2
3
4
5
6
-50 0 50 100 150
VDS= 10V
ID= 1mA
CHANNEL TEMPERATURE: Tch (℃)
GATE THRESHOLD VOLTAGE: V
GS(th)
(V)
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGS= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
0
1
2
3
4
5
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=6.0V
VGS=6.5V
VGS=8.0V
VGS=7.5V
VGS=9.0V
VGS=4.5V
VGS=5.0V
VGS=5.5V
VGS=7.0V
VGS=10V
Ta=25℃
pulsed
0
1
2
3
4
5
0 5 10 15
ID= 2.5A
ID= 5.0A
Ta=25℃
pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
0
1
2
3
4
5
-50 0 50 100 150
VGS= 10V
Pulsed
ID= 2.5A
ID= 5.0A
CHANNEL TEMPERATURE: Tch (℃)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10
VDS= 10V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : ID (A)
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
0.001
0.01
0.1
1
10
0 0.5 1 1.5
V
GS
= 0V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Fig.9 Reverse Drain Current vs.
Sourse-Drain Voltage
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE CURRENT : I
S
(A)
3/5
2011.10 - Rev.A
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Data Sheet
R5005CNJ
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
C
oss
C
rss
Ta= 25℃
f= 1MHz
VGS= 0V
C
iss
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS (V)
CAPACITANCE : C (pF)
10
100
1000
0.1 1 10 100
Ta= 25℃
di / dt= 100A / μs
V
GS
= 0V
Pulsed
Fig.11 Reverse Recovery Time
vs.Source Current
SOURCE CURRENT : IS (A)
REVERSE RECOVERY TIME: t
rr
(ns)
1
10
100
1000
10000
0.01 0.1 1 10
t
f
Ta= 25
℃
VDD= 250V
V
GS
= 10V
R
G
= 10Ω
Pulsed
t
d(off)
t
d(on) tr
Fig.12 Switching Characteristics
DRAIN CURRENT : ID (A)
SWITCHING TIME : t (ns)
0
5
10
15
0 5 10 15
Ta= 25℃
VDD= 250V
I
D
= 5A
R
G
= 10Ω
Pulsed
Fig.13 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg (nC)
GATE-SOURCE VOLTAGE : V
GS
(V)
4/5
2011.10 - Rev.A
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Data Sheet
R5005CNJ
F
it
%
V
V
F
S
Fig.2-2 Gate Charge Waveform
V
Measurement circuits
V
GS
R
G
ig.1-1 Switching Time Measurement Circu
V
GS
I
G(Const.)
ig.2-1 Gate Charge Measurement Circuit
D.U.T.
D.U.T.
D
I
R
L
V
DD
D
I
R
L
V
DD
Pulse width
V
DS
50%
10%
GS
DS
10% 10%
90%
50%
90% 90
t
d(on)
t
on
t
d(off)
t
r
t
f
t
off
Fig.1-2 Switching Waveforms
V
G
V
D
GS
QgsQ
Q
g
gd
Charge
V
GS
R
G
D.U.T.
I
AS
L
DD
V
Fig.3-1 Avalanche Measurement Circuit
V
DS
V(BR)DSS
IAS
VDD
EAS =
1
L
2
V(BR)DSS
2
I
AS
V
(BR)DSS
-
VDD
Fig.3-2 Avalanche Waveform
5/5
2011.10 - Rev.A
Notes
Notice
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