QSZ4
Transistors
General purpose transistor
(isolated transistor and diode)
QSZ4
A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package.
zApplications
DC / DC converter
Motor driver
zFeatures
1) Low V
2) Small package
zStructure
Silicon epitaxial planar transistor
zEquivalent circuit
zPackaging specifications
Basic ordering unit(pieces)
CE(sat)
(4)(5)
Tr2Tr1
(2) (3)(1)
Type QSZ4
Package
Marking
Code
TSMT5
Z04
TR
3000
zDimensions (Unit : mm)
QSZ4
(5) (4)
(1) (2) (3)
ROHM : TSMT5
Each lead has same dimensions
Abbreviated symbol : Z04
Rev.B 1/4
QSZ4
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×
t
0.8mm ceramic substrate.
CBO
V
V
CEO
V
EBO
I
I
CP
Pc
Tj
Tstg
C
Tr 2
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×
Parameter Symbol
CBO
V
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
t
0.8mm ceramic substrate.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Tr 2
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Limits
−30
−30
−6
−2
−4
500
1.25 W/Total
0.9 W/Element
150
−55 to +150
Limits
30
30
6
2
4
500
1.25 W/Total
0.9 W/Element
150
−55 to +150
CBO
BV
CEO
BV
EBO
BV
CBO
I
I
EBO
CE(sat)
V
FE
h
T
f
Cob − 20 −
CBO
BV
BV
CEO
EBO
BV
I
CBO
I
EBO
CE(sat)
V
FE
h
T
f
Cob − 20 −
Unit
V
V
V
A
∗1
A
mW/Total
∗2
∗3
∗3
°C
°C
Unit
V
V
V
A
∗1
A
mW/Total
∗2
∗3
∗3
°C
°C
−30
−30
−6
270 − 680
30
30
270 − 680
−−
−−
−−
−−
−−
−−180
280
−
−−
−−
6
−−
−−
−−
− 180
280
−
−100
−100
−370 mV
100
100
370 mV
MHz
−
MHz
−
V
C
= −10µA
I
V
I
C
= −1mA
V
E
= −10µA
I
nA VCB= −30V
nA VEB= −6V
IC= −1.5A, IB= −75mA
− V
CE
= −2V, IC= −200mA
VCE= −2V, IE=200mA, f=100MHz
CB
= −10V, IE=0A, f=1MHz
V
pF
V
I
C
=10µA
V
I
C
=1mA
V
I
E
=10µA
nA VCB=30V
nA VEB=6V
IC=1.5A, IB=75mA
− V
CE
=2V, IC=200mA
VCE=2V, IE= −200mA, f=100MHz
V
CB
pF
=10V, IE=0A, f=1MHz
∗
∗
∗
∗
Rev.B 2/4
QSZ4
Transistors
zElectrical characteristic curves
Tr1(PNP)
1000
Ta=100 C
FE
Ta=25 C
Ta= −40 C
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.1 DV current gain
vs. collector current
10
VBE=2V
Pulsed
Ta=100 C
1
0.1
Ta=25 C
Ta= −40 C
COLLECTOR CURRENT :IC (A)
0.01
0.1 1 10
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
(A)
C
1000
Cib
100
Cob
IC=0A
f=1MHz
Ta=25 C
VCE= −2V
Pulsed
10
(V)
IC/IB=20/1
Pulsed
CE(sat)
1
0.1
0.01
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Ta= −40 C
Ta=25 C
Ta=100 C
Fig.2 Collector-emitter saturation voltage
vs. collector current
1000
100
TRANSITION FREQUENCY : fT (MHz)
10
0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter curent
Ta=25 C
VCE= −2V
f=100MHz
10
(V)
BE(sat)
1
IC/IB=50/1
IC/IB=20/1
0.1
BASE SATURATION VOLTAGE : V
10
0.001 0.01 0.1 1 10
IC/IB=10/1
COLLECTOR CURRENT : IC (A)
Fig.3 Base-emitter saturation voltage
vs. collectir current
10000
1000
100
10
SWITCHINGTIME : (ns)
1
0.01
tstg
0.1 1
COLLECTOR CURRENT : IC(A)
Fig.6 Switching time
tf
Ta=25 C
Pulsed
Ta=25 C
VCE= −12V
I
C/IB
=20/1
Pulsed
tdon
tr
10
10
COLLECTOR CURRENT :I
1
0.001 0.1 1000.01 1 10
EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
CB
(V)
Rev.B 3/4
QSZ4
Transistors
Tr2(NPN)
1000
FE
100
DC CURRENT GAIN : h
Ta=125 C
Ta=25 C
Ta= −25 C
VCE=−2V
Pulsed
10
(V)
CE(sat)
0.1
IC/IB=20/1
Pulsed
1
Ta= −25 C
Ta=25 C
Ta=125 C
10
(V)
BE(sat)
IC/IB=20/1
Pulsed
Ta= −25 C
Ta=25 C
1
Ta=125 C
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.8 DC current gain
vs. collector current
10
VCE=−2V
Pulsed
(A)
C
1
0.1
0.01
Ta=125 C
Ta=25 C
Ta= −25 C
COLLECTOR CURRENT : I
0.001
0 1.4
0.2
0.6 0.8
0.4
1.2
1
BASE TO EMITTER CURRENT : VBE (V)
Fig.11 Grounded emitter propagation
characteristics
0.01
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
10
Fig.9 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1000
100
TRANSITION FREQUENCY : fT (MHz)
10
0.01 0.1 1 10
EMITTER CURRENT : IE (A)
Fig.12 Gain bandwidth product
vs. emitter current
Ta=25 C
VCE=−2V
f= 100MHz
0.1
BASE SATURATION VOLTAGE : V
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.10 Base-emitter saturation voltage
vs. collector current
1000
Cob
100
10
0.001 0.01 0.1 1 10 100
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Cib
IC=0A
f=1MHz
Ta=25 C
CB
Fig.13 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
(V)
Rev.B 4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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