ROHM QSZ4 Technical data

QSZ4

Transistors

General purpose transistor
(isolated transistor and diode)

QSZ4

A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package.

zApplications

DC / DC converter
Motor driver

zFeatures

1) Low V

2) Small package

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit

zPackaging specifications

Basic ordering unit(pieces)

CE(sat)

(4)(5)

Tr2Tr1

(2) (3)(1)

Type QSZ4

Package

Marking

Code

TSMT5

Z04

TR

3000

zDimensions (Unit : mm)

QSZ4

(5) (4)

(1) (2) (3)

ROHM : TSMT5

Each lead has same dimensions

Abbreviated symbol : Z04

Rev.B 1/4

QSZ4

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×

t

0.8mm ceramic substrate.

CBO

V
V

CEO

V

EBO

I

I

CP

Pc

Tj

Tstg

C

Tr 2

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×

Parameter Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

Pc

Tj

Tstg

t

0.8mm ceramic substrate.

zElectrical characteristics (Ta=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Tr 2

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Limits

−30

−30

−6

−2

−4

500

1.25 W/Total

0.9 W/Element

150

−55 to +150

Limits

30
30

6
2
4

500

1.25 W/Total

0.9 W/Element

150

−55 to +150

CBO

BV

CEO

BV

EBO

BV

CBO

I
I

EBO

CE(sat)

V

FE

h

T

f

Cob − 20 −

CBO

BV
BV

CEO
EBO

BV

I

CBO

I

EBO

CE(sat)

V

FE

h

T

f

Cob − 20 −

Unit

V
V
V
A

∗1

A

mW/Total

∗2
∗3
∗3

°C
°C

Unit

V
V
V
A

∗1

A

mW/Total

∗2
∗3
∗3

°C
°C

−30

−30

−6

270 − 680

30
30

270 − 680

−−

−−

−−

−−

−−

−−180

280

−

−−

−−

6

−−

−−

−−

− 180

280

−

−100

−100

−370 mV

100
100
370 mV

MHz

−

MHz

−

V

C

= −10µA

I

V

I

C

= −1mA

V

E

= −10µA

I
nA VCB= −30V
nA VEB= −6V

IC= −1.5A, IB= −75mA

− V

CE

= −2V, IC= −200mA

VCE= −2V, IE=200mA, f=100MHz

CB

= −10V, IE=0A, f=1MHz

V

pF

V

I

C

=10µA

V

I

C

=1mA

V

I

E

=10µA
nA VCB=30V
nA VEB=6V

IC=1.5A, IB=75mA

− V

CE

=2V, IC=200mA
VCE=2V, IE= −200mA, f=100MHz
V

CB

pF

=10V, IE=0A, f=1MHz

∗

∗

∗

∗

Rev.B 2/4