ROHM QSZ3 Technical data

Transistors

General purpose transistor
(isolated transistor and diode)

QSZ3

A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package.

zApplica tions

DC / DC converter
Motor driver

zFeatures

1) Low V

CE(sat)

2) Small package

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit

(4)(5)

Tr2Tr1

(2) (3)(1)

zPackaging specifications

Type QSZ3

Package

Marking

Code

Basic ordering unit(pieces)

TSMT5

3000

Z03

TR

zExternal dimensions (Unit : mm)

QSZ3

(1)

0.4

(3) (2)

0.16

0.3∼0.6

ROHM : TSMT5

Abbreviated symbol : Z03

2.8

1.6

(5)

0.95

2.9

1.9

0.95

(4)

0.85

0.7

0∼0.1

Each lead has same dimensions

QSZ3

1/4

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×

Tr 2

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×

zElectrical characteristics (Ta=25°C)
Tr1

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Tr 2

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Parameter Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

Pc

Tj

Tstg

−55 to +150

t

0.8mm ceramic substrate.

Parameter Symbol

CBO

V
VCEO
VEBO

IC

ICP

Pc

Tj

Tstg

−50 to +150

t

0.8mm ceramic substrate.

Parameter Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

CBO

I

EBO

I

CE(sat)

V

h

f

Cob − 30 −

Parameter Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

I

CBO

I

EBO

CE(sat)

V

FE

h

f

Cob − 30 −

Limits

−15

−12

−6

−3

−6

500

Unit

V
V
V
A
A

mW/Total

1.25 W/Total

0.9 W/Element

150

°C
°C

Limits

15
12

6
3
6

500

Unit

V
V
V
A
A

mW/Total

1.25 W/Total

0.9 W/Element

150

°C
°C

CBO
CEO
EBO

−15

−12

−6

−−

−−

−−120

FE
T

CBO
CEO
EBO

270 − 680

−

15
12

6

−−

−−

− 120

270 − 680

T

−

∗1
∗2
∗3
∗3

∗1
∗2
∗3
∗3

−−

−−

−−

−100

−100

−250 mV

280

360

−

−−

−−

−−

100
100
250 mV

−

V

C

= −10µA

I

V

C

= −1mA

I

V

E

= −10µA

I
nA VCB= −15V
nA VEB= −6V

IC= −1.5A, IB= −30mA

− V

CE

= −2V, IC= −500mA

MHz

VCE= −2V, IE=500mA, f=100MHz

CB

= −10V, IE=0A, f=1MHz

V

pF

V

C

=10µA

I

V

C

=1mA

I

V

E

=10µA

I
nA VCB=15V
nA VEB=6V

IC=1.5A, IB=30mA

CE

− V

MHz

pF

=2V, IC=500mA
VCE=2V, IE= −500mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

QSZ3

∗

∗

∗

∗

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