ROHM QSZ2 Technical data

General purpose transistor

QSZ2

A 2SB1695 and a 2SD2657 are housed independently in a TSMT5 package.

Structure Dimensions (Unit : mm)
Silicon epitaxial planar transistor

Features

1) Low V

CE(sat)

2) Small package

Applications

DC / DC converter
Motor driver

Packaging specifications Equivalent circuit

Type QSZ2

Package

Marking

Code

Basic ordering unit(pieces)

TSMT5

Z02

TR

3000

Absolute maximum ratings (Ta=25C)
Tr1

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Single pulse Pw=1ms.

1

∗

Each terminal mounted on a recommended land.

2

∗

Mounted on a 25mm 25mm t0.8mm ceramic substrate.

3

∗

+

+

Symbol Limits Unit

V

CBO

V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

−30

−30

−6

−1.5

−3

500

1.25

0.9

150

−55 to +150

mW/Total

W/Total

W/Element

Tr2

Parameter Symbol

V

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

Single pulse Pw=1ms.

1

∗

Each terminal mounted on a recommended land.

2

∗

Mounted on a 25mm 25mm t0.8mm ceramic substrate.

3

∗

+

+

CBO

V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

30
30

6

1.5
3

500

1.25

0.9

150

−55 to +150

Unit

V
V
V
A
A

mW/Total

W/Total

W/Element

°C
°C

°C

°C

V

V

V

A

A

1

∗

2

∗

3

∗

3

∗

QSZ2

ROHM : TSMT5

Tr1 Tr2

1

∗

2

∗

3

∗

3

∗

0.4

0.16

0.3∼0.6

Abbreviated symbol : Z02

(5) (4)

(3)(2)(1)

2.8

1.6

(1)

(3) (2)

0∼0.1

Each lead has same dimensions

(5)

0.95

2.9

1.9

0.95

(4)

0.85

0.7

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2011.04 - Rev.A

Electrical characteristics (Ta=25C)
Tr1

Parameter Symbol

Collector-base breakdown voltage

Collector-emitter breakdown viltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collerctor-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Pulsed

∗

Tr2

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

∗ Pulsed

BV

BV

BV

I

I

V

CE(sat)

Cob

CBO

EBO

h

f

BV

BV

BV

V

CBO

CEO

EBO

FE

T

CBO

CEO

EBO

CBO

I

I

EBO

CE(sat)

h

FE

T

f

Cob

Typ. Max. Unit Conditions

Min.

V

C

−30

−30

270

−6

−

−

−

−

−

−

−

−

−200

−

280

−

13

−

30

30

6

−−

−

−

270 − 680

−

−

−

−

−

−100

−100

−370

nA

nA

mV

680

MHz

− VCE= −2V, IE=100mA, f=100MHz

pF

−

−−

−−

−−

100

100

−

350 mV

140

300

−

11 −

= −10μA

I

V

C

= −1mA

I

V

E

= −10μA

I

V

CB

EB

V

C

= −1mA, IB= −50mA

I

V

CE

−

V

CB

V

V

V

nA V

nA V

− V

MHz

pF

= −30V

= −6V

= −2V, IC= −100mA

∗

= −10V, IE=0mA, f=1MHz

C

=10μA

I

I

C

=1mA

I

E

=10μA

CB

=30V

EB

=6V

IC=1A, IB=50mA

CE

=2V, IC=100mA

∗

VCE=2V, IE= −100mA, f=100MHz

CB

=10V, IE=0A, f=1MHz

V

Data Sheet QSZ2

∗

∗

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2011 ROHM Co., Ltd. All rights reserved.

2011.04 - Rev.A