ROHM QSZ1 Technical data

Transistors

General purpose transistor

QSZ1

A 2SB1690 and a 2SD2653 are housed independently in a TSMT5 package.

zApplica tions

DC / DC converter
Motor driver

zFeatures

1) Low V

CE(sat)

2) Small package

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit

(5) (4)

Tr1 Tr2

(3)(2)(1)

zPackaging specifications

Type QSZ1

Package

Marking

Code

Basic ordering unit(pieces)

TSMT5

3000

Z01

TR

zExternal dimensions (Unit : mm)

QSZ1

ROHM : TSMT5

2.8

1.6

(1)

0.4

(3) (2)

0.16

0.3∼0.6

Abbreviated symbol : Z01

(5)

0.95

1.9

0.95

(4)

0.7

0∼0.1

Each lead has same dimensions

QSZ1

2.9

0.85

1/4

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature
Storage temperature

Single pulse Pw=1ms.

1

∗

Each terminal mounted on a recommended land.

2

∗

Mounted on a 25mm 25mm t0.8mm ceramic substrate.

3

∗

+

+

Tr2

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

1

∗

2

∗

3

∗

Parameter Symbol

Single pulse Pw=1ms.
Each terminal mounted on a recommended land.
Mounted on a 25mm 25mm t0.8mm ceramic substrate.

+

+

zElectrical characteristics (Ta=25°C)
Tr1

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

Pulsed

∗

Tr2

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

Symbol Limits Unit

CBO

V
VCEO
VEBO

IC

I

CP

PC

Tj

Tstg

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

T

f

Cob

BV
BV

BV

CBO

I

EBO

I

CE(sat)

V

h

Cob

−55 to +150

Limits

15
12

6
2
4

500

1.25

0.9

150

−55 to +150

Min.

−15

−12

−6

−

−

−

270

−

−

CBO
CEO
EBO

FE
T

f

−15

−12

−6

−2

−4

500

1.25

0.9

150

V
V
V
A
A

mW/Total

W/Total

W/Element

°C

1

∗

2

∗

3

∗

3

∗

°C

Unit

V
V
V
A

1

A

∗

mW/Total

W/Total

W/Element

2

∗

3

∗

3

∗

°C
°C

Typ. Max. Unit Conditions

V

mV

MHz

−

−

nA
nA

pF

I

C

=

−10µA

V

I

C

=

−1mA

V

I

E

=

−10µA

CB

=

−15V

V
V

EB

=

−6V

C

=

−1mA, I

I

CE

=

−

−2V, I

V

CE

=

−2V, IE=200mA, f=100MHz

V

CB

=

−10V, IE=0mA, f=1MHz

V

C

I

V

IC=1mA

V

E

I
VCB=15V
VEB=6V
IC=1A, IB=50mA

− V

MHz

VCE=2V, IE=−200mA, f=100MHz

pF

V

−

−

−

−

−

−

−100

−

−100

−

−120

−180

680

−

360

15
12

6

15

−−

−−

−−

− V

−

−−

−−

90 180 mV

−

270

−

360

−

20

−

100 nA
100 nA

680

B

=

−50mA

−200mA

∗

C

=

=10µA

=10µA

CE

=2V, IC=200mA

CB

=10V, IE=0A, f=1MHz

QSZ1

∗

∗

∗

2/4